AFGY120T65SPD [ONSEMI]
IGBT - 650 V 120 A FS3 for EV traction inverter application;
| 型号： | AFGY120T65SPD |
| 厂家： | 
ONSEMI |
| 描述： | IGBT - 650 V 120 A FS3 for EV traction inverter application 双极性晶体管 |
| 文件： | 总10页 (文件大小：352K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Field Stop Trench IGBT with
Soft Fast Recovery Diode
120ꢀA, 650ꢀV
AFGY120T65SPD
AFGY120T65SPD which is AEC Q101 qualified offers very low
conduction and switch losses for a high efficiency operation in various
applications, rugged transient reliability and low EMI.
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Meanwhile, this part also offers an advantage of outstanding parallel
operation performance with balance current sharing.
120 A, 650 V,
VCESat = 1.6 V
Features
• AEC−Q101 Qualified
C
• Very Low Saturation Voltage: V
= 1.6 V (Typ.) @ I = 120 A
C
CE(Sat)
• Maximum Junction Temperature: T = 175°C
J
• Positive Temperature Co−efficient for Easy Parallel Operating
• Tight Parameter Distribution
G
• High Input Impedance
• 100% of the Parts are Tested for I
E
LM
• Short Circuit Ruggedness
• Co−packed with Soft Fast Recovery Diode
Typical Applications
• Traction Inverter for HEV/EV
• Auxiliary DC/AC Converters
• Motor Drives
G
C
• Other Power−Train Applications Requiring High Power Switch
E
TO−247−3LD
CASE 340CU
MAXIMUM RATINGS
Rating
Symbol Value
Unit
V
MARKING DIAGRAM
Collector−to−Emitter Voltage
V
CES
V
GES
650
Gate−to−Emitter Voltage
Transient Gate−to−Emitter Voltage
20
30
V
Collector Current (Note 1)
@ T = 25°C
I
C
160
120
A
C
@ T = 100°C
C
$Y&Z&3&K
AFGY120T
65SPD
Pulsed Collector Current
Pulsed Collector Current
I
360
360
A
A
A
LM
I
CM
Diode Forward Current (Note 1) @ T = 25°C
I
F
160
120
C
C
@ T = 100°C
Maximum Power Dissipation
@ T = 25°C
P
D
714
357
W
C
@ T = 100°C
C
$Y
&Z
&3
&K
= ON Semiconductor Logo
Short Circuit Withstand Time @ T = 25°C
SCWT
dV/dt
6
ms
V/ns
°C
C
= Assembly Plant Code
= Date Code (Year & Week)
= Lot Traceability Code
Voltage Transient Ruggedness (Note 2)
10
Operating Junction / Storage Temperature
Range
T , T
−55 to
+175
J
STG
AFGY120T65SPD = Specific Device Code
Maximum Lead Temp. for Soldering
Purposes, 1/8″ from case for 5 seconds
T
L
265
°C
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limit by bond wire
Device
Package
Shipping
AFGY120T65SPD TO−247−3LD 30 Units / Tube
2. V = 400 V, V = 15 V, I = 360 A, Inductive Load
CC
GE
C
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
July, 2020 − Rev. 0
AFGY120T65SPD/D
AFGY120T65SPD
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.21
0.32
40
Unit
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
R
q
JC
R
q
JA
°C/W
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
C
= 0 V,
BV
650
−
−
−
V
GE
CES
I
= 1 mA
Temperature Coefficient of
Breakdown Voltage
V
C
= 0 V,
= 1 mA
−
0.6
V/°C
GE
DBV
DT
CES
I
J
Collector−emitter cut−off current,
gate−emitter short−circuited
V
CE
= 0 V,
I
−
−
−
−
40
mA
GE
CES
V
= 650 V
Gate leakage current, collector−
emitter short−circuited
V
= 20 V,
= 0 V
I
250
nA
GE
GES
V
CE
ON CHARACTERISTICS
Gate−emitter threshold voltage
Collector−emitter saturation voltage
V
= V , I = 120 mA
V
GE(th)
4.3
5.3
6.3
V
V
GE
CE
C
V
= 15 V, I = 120 A
V
CE(sat)
−
−
1.6
2.15
2.05
−
GE
C
V
GE
= 15 V, I = 120 A, T = 175°C
C
J
DYNAMIC CHARACTERISTICS
Input capacitance
V
= 30 V,
GE
C
−
−
−
−
−
−
−
4930
375
42
−
−
pF
CE
ies
V
= 0 V,
Output capacitance
C
oes
f = 1 MHz
Reverse transfer capacitance
Internal Gate Resistance
Gate charge total
C
−
res
f = 1 MHz
R
3
−
W
G
V
= 400 V,
Q
125
38
187
−
nC
CE
C
g
I
= 120 A,
Gate−to−emitter charge
Gate−to−collector charge
Q
Q
ge
gc
V
= 15 V
GE
40
−
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on delay time
Rise time
T = 25°C,
CC
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
40
104
80
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
d(on)
V
= 400 V,
= 120 A,
t
r
I
C
G
GE
R
= 5.0 W,
Turn−off delay time
Fall time
t
d(off)
V
= 15 V,
Inductive Load
t
f
116
6.6
3.8
10.4
36
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
mJ
ns
on
off
E
E
ts
T = 175°C,
t
t
J
CC
C
d(on)
V
= 400 V,
t
r
112
92
I
= 120 A,
R
GE
= 5.0 W,
= 15 V,
G
Turn−off delay time
Fall time
d(off)
V
Inductive Load
t
f
160
10.5
4.9
15.4
Turn−on switching loss
Turn−off switching loss
Total switching loss
E
mJ
on
off
E
E
ts
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2
AFGY120T65SPD
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
J
Parameter
DIODE CHARACTERISTIC
Diode Forward Voltage
Test Conditions
Symbol
Min
Typ
Max
Unit
V
I = 120 A, T = 25°C
V
−
−
−
1.4
1.35
428
1.7
−
F
J
FM
rec
I = 120 A, T = 175°C
F
J
Reverse Recovery Energy
E
−
mJ
I = 120 A, dl /dt = 1000 A/ms,
F
F
V
= 400 V, T = 25°C
CE
J
I = 120 A, dl /dt = 1000 A/ms,
−
−
−
−
−
2026
107
−
−
−
−
−
F
F
V
= 400 V, T = 175°C
CE
J
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
T
ns
I = 120 A, dl /dt = 1000 A/ms,
rr
F
F
V
CE
= 400 V, T = 25°C
J
I = 120 A, dl /dt = 1000 A/ms,
203
F
F
V
CE
= 400 V, T = 175°C
J
Q
2237
8155
nC
I = 120 A, dl /dt = 1000 A/ms,
rr
F
F
V
CE
= 400 V, T = 25°C
J
I = 120 A, dl /dt = 1000 A/ms,
F
F
V
CE
= 400 V, T = 175°C
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
AFGY120T65SPD
TYPICAL CHARACTERISTICS
360
300
240
180
120
360
15 V
12 V
20 V
T
C
= 25°C
20 V
15 V
T
C
= 175°C
12 V
300
240
180
120
10 V
10 V
V
GE
= 8 V
V
GE
= 8 V
60
0
60
0
0
2
4
6
8
0
0
6
2
4
6
8
12
16
V
, COLLECTOR−EMITTER VOLTAGE (V)
V
, COLLECTOR−EMITTER VOLTAGE (V)
CE
CE
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
120
90
360
300
240
180
120
T
= 25°C
C
Common Emitter
V = 15 V
GE
T
= 175°C
C
60
30
0
60
0
Common Emitter
V
= 15 V
GE
T
C
= 175°C
T
C
= 25°C
0
1
2
3
4
5
3
6
9
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Typical Saturation Voltage
Figure 4. Transfer Characteristics
3.5
3.0
2.5
2.0
10
8
I
= 60 A
120 A
240 A
C
Common Emitter
Common Emitter
240 A
T
C
= −40°C
V
= 15 V
GE
6
120 A
4
2
0
1.5
1.0
I
C
= 60 A
25
50
75
100
125
150
175
8
10
12
14
T , COLLECTOR−EMITTER CASE TEMPERATURE (°C)
C
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 5. Saturation Voltage vs. Case
Temperature
Figure 6. Saturation Voltage vs. VGE
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4
AFGY120T65SPD
TYPICAL CHARACTERISTICS
10
8
10
I
C
= 60 A
I = 60 A
C
120 A
240 A
120 A
Common Emitter
Common Emitter
T
C
= 25°C
T
C
= 175°C
8
6
4
240 A
6
4
2
0
2
0
6
8
10
12
14
16
6
8
10
12
14
16
V
GE
, GATE−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 7. Saturation Voltage vs. VCE
Figure 8. Saturation Voltage vs. VCE
10K
1K
15
12
9
325 V
C
ies
Common Emitter
T
C
= 25°C
390 V
C
oes
V
CC
= 260 V
6
100
10
C
res
Common Emitter
3
0
V
GE
= 0 V, f = 1 MHz
T
C
= 25°C
0.1
1
10
30
0
20
40
60
80
100
120
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
1000
100
10
500
100
T
C
T
C
= 25°C
= 175°C
10 ms
100 ms
1 ms
t
r
t
d(on)
1
DC
Common Emitter
= 400 V, V = 15 V
Single Nonrepetitive Pulse T = 25°C,
Curves must be derated linearly with
increase in temperature
C
V
CC
GE
I
C
= 120 A
0.1
10
1
10
100
1000
0
10
20
30
40
50
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
R , GATE RESISTANCE (W)
g
Figure 11. SOA Characteristics
Figure 12. Turn−On Characteristics vs. Gate
Resistance
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5
AFGY120T65SPD
TYPICAL CHARACTERISTICS
1000
100
1000
T
C
T
C
= 25°C
= 175°C
T
C
T
C
= 25°C
= 175°C
t
d(off)
t
r
100
10
t
f
t
d(on)
Common Emitter
= 400 V, V = 15 V
Common Emitter
V
CC
GE
V
CC
= 400 V, V = 15 V
GE
I
C
= 120 A
R
= 5 W
G
10
1
0
0
0
10
20
40
60
80
0
40
80
120
160
R , GATE RESISTANCE (W)
I , COLLECTOR CURRENT (A)
C
g
Figure 13. Turn−Off Characteristics vs. Gate
Figure 14. Turn−On Characteristics vs.
Resistance
Collector Current
50
10
1000
T
C
T
C
= 25°C
= 175°C
T
T
= 25°C
= 175°C
C
C
t
f
E
on
100
10
t
d(off)
E
off
Common Emitter
= 400 V, V = 15 V
Common Emitter
V
R
V
I
= 400 V, V = 15 V
= 120 A
CC
GE
CC
GE
= 5 W
G
C
1
40
80
120
160
0
10
20
30
40
50
I , COLLECTOR CURRENT (A)
R , GATE RESISTANCE (W)
g
C
Figure 15. Turn−Off Characteristics vs.
Figure 16. Switching Loss vs. Gate Resistance
Collector Current
100
10
360
100
T
C
T
C
= 25°C
= 175°C
E
on
T
C
= 125°C
10
T
C
= 175°C
E
off
1
1
T
C
= 25°C
Common Emitter
V
R
= 400 V, V = 15 V
CC
GE
= 5 W
G
0.1
0.1
20
40
60
80
100
120
0
0.5
1.0
1.5
2.0
2.5
I , COLLECTOR CURRENT (A)
C
V , FORWARD VOLTAGE (V)
F
Figure 17. Switching Loss vs. Collector
Current
Figure 18. Forward Characteristics
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6
AFGY120T65SPD
TYPICAL CHARACTERISTICS
10,000
1000
100
10
20K
10K
T
T
= 175°C
= 125°C
C
di/dt = 1000 A/ms
di/dt = 500 A/ms
di/dt = 1000 A/ms
C
1K
di/dt = 500 A/ms
1
T
C
= 25°C
0.1
T
C
T
C
= 25°C
= 175°C
0.01
100
50
150
250
350
450
550
650
0
20
40
60
80
100
120
V , REVERSE VOLTAGE (V)
R
V , FORWARD CURRENT (V)
F
Figure 19. Reverse Current
Figure 20. Stored Charge
300
250
200
150
100
800
750
700
di/dt = 500 A/ms
di/dt = 1000 A/ms
di/dt = 500 A/ms
di/dt = 1000 A/ms
650
600
50
0
T
C
T
C
= 25°C
= 175°C
0
20
40
60
80
100
120
−80
−40
0
40
80
120
160
200
I , FORWARD CURRENT (A)
F
T , JUNCTION TEMPERATURE (°C)
J
Figure 21. Reverse Recovery Time
Figure 22. Collector−to−Emitter Breakdown
Voltage vs. Junction Temperature
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7
AFGY120T65SPD
TYPICAL CHARACTERISTICS
1
0.5
0.1
0.2
0.1
0.05
Single Pulse
P
DM
0.01
Peak T = P
x Z
+ T
JC C
q
J
DM
Duty Factor, D = t /t
1
2
0.02
t
1
t
2
0.01
0.0001
0.001
0.001
0.01
RECTANGULAR PULSE DURATION (sec)
0.1
1
Figure 23. Transient Thermal Impedance of IGBT
1
0.5
0.2
0.1
0.1
P
DM
Peak T = P
x Z
+ T
JC C
Single Pulse
q
J
DM
Duty Factor, D = t /t
1
2
t
1
0.02
0.01
0.05
0.0001
t
2
0.01
0.001
0.01
RECTANGULAR PULSE DURATION (sec)
0.1
1
Figure 24. Transient Thermal Impedance of Diode
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CU
ISSUE B
DATE 28 OCT 2021
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
*This information is generic. Please refer to
A
Y
= Assembly Site Code
= Year
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
AYWWZZ
XXXXXXXXX
XXXXXXXXX
WW = Work Week
ZZ = Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13773G
TO−247−3LD
PAGE 1 OF 1
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