ATP103-TL-H [ONSEMI]
P 沟道，功率 MOSFET，-30V，-55A，13mΩ;
| 型号： | ATP103-TL-H |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，功率 MOSFET，-30V，-55A，13mΩ |
| 文件： | 总7页 (文件大小：338K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1623A
ATP103
P-Channel Power MOSFET
http://onsemi.com
–
–
Ω
30V, 55A, 13m , Single ATPAK
Features
•
•
•
•
Low ON-resistance
Slim package
Halogen free compliance
Large current
4.5V drive
Protection diode in
•
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
--30
Unit
V
V
DSS
V
±20
V
GSS
I
--55
A
D
Drain Current (PW 10 s)
I
PW 10 s, duty cycle 1%
--165
50
A
≤
μ
≤
μ
≤
DP
Allowable Power Dissipation
Channel Temperature
P
Tc=25 C
W
°C
°C
mJ
A
°
D
Tch
150
Storage Temperature
Tstg
--55 to +150
57
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
AS
I
AV
--28
Note : 1 V = 10V, L=100 H, I = 28A
-- --
*
μ
DD
2 L 100 H, Single pulse
AV
*
≤
μ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: ATPAK
7057-001
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
ATP103-TL-H
1.5
Packing Type: TL
Marking
6.5
4.6
2.6
0.4
0.4
ATP103
4
LOT No.
TL
Electrical Connection
4,2
2
0.55
1
3
0.8
0.6
1 : Gate
2 : Drain
0.4
2.3
2.3
1
3 : Source
4 : Drain
3
ATPAK
Semiconductor Components Industries, LLC, 2013
July, 2013
61312 TKIM/D0209PA TKIM TC-00002144 No. A1623-1/7
ATP103
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
--30
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=-- 1mA, V =0V
V
μA
μA
V
(BR)DSS
D
GS
=-- 30V, V =0V
I
I
V
V
V
V
-- 1
DSS
DS
GS
DS
DS
GS
=±16V, V =0V
DS
±10
GSS
V
(off)
GS
=-- 10V, I =-- 1mA
--1.2
--2.6
D
Forward Transfer Admittance
| yfs |
=-- 10V, I =--28A
45
S
D
R
R
(on)1
(on)2
I
I
=-- 28A, V =-- 10V
GS
10
14.5
2430
555
395
19
13
mΩ
mΩ
pF
pF
pF
ns
DS
D
D
Static Drain-to-Source On-State Resistance
=-- 14A, V =-- 4.5V
GS
20.5
DS
Input Capacitance
Ciss
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--10V, f=1MHz
DS
t
t
t
t
(on)
d
r
400
150
145
47
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
ns
d
f
ns
Total Gate Charge
Qg
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=--15V, V =--10V, I =--55A
GS
10
DS
D
8.7
V
SD
I =--55A, V =0V
GS
--1.03
--1.5
S
Switching Time Test Circuit
V = --15V
DD
V
IN
0V
--10V
I
= --28A
D
V
IN
R =0.54Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
ATP103
P. G
50Ω
S
Ordering Information
Device
Package
ATPAK
Shipping
3,000pcs./reel
memo
ATP103-TL-H
Pb Free and Halogen Free
No. A1623-2/7
ATP103
I
D
-- V
DS
I
-- V
D GS
--55
--50
--45
--40
--35
--30
--25
--20
--15
--10
--70
--60
--50
--40
--30
--20
V
= --10V
Tc=25°C
Single pulse
DS
Single pulse
V
= --3.5V
GS
--10
0
--5
0
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
IT15228
0
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
IT15229
Drain-to-Source Voltage, V
DS
-- V
Gate-to-Source Voltage, V -- V
GS
R
(on) -- V
R
(on) -- Tc
DS
GS
DS
30
25
20
15
10
30
28
26
24
22
20
18
16
14
12
10
Single pulse
Tc=25°C
Single pulse
I
= --14A
D
--28A
5
0
8
6
--50
--25
0
25
50
75
100
125
150
--1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16
Gate-to-Source Voltage, V
-- V
IT15230
Case Temperature, Tc -- °C
IT15231
GS
| yfs | -- I
I
S
-- V
SD
D
2
7
5
V
=0V
V
= --10V
DS
Single pulse
GS
--100
7
Single pulse
5
3
2
3
2
--10
7
5
3
2
10
--1.0
7
5
7
5
3
2
--0.1
7
3
2
5
3
2
--0.01
7
5
3
2
1.0
--0.001
7
2
3
5
7
2
3
5
7
2
3
5
7
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--0.1
--1.0
--10
--100
Diode Forward Voltage, V
SD
-- V
Drain Current, I -- A
IT15232
IT15233
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
3
7
5
V
V
= --15V
= --10V
f=1MHz
DD
GS
2
1000
3
2
7
5
3
2
1000
t
f
7
5
100
7
5
3
2
3
2
t (on)
d
10
7
100
2
3
5
7
2
3
5
7
2
3
5
7
2
0
--5
--10
--15
--20
--25
--30
IT15235
--0.1
--1.0
--10
--100
Drain Current, I -- A
IT15234
Drain-to-Source Voltage, V -- V
DS
D
No. A1623-3/7
ATP103
A S O
V
GS
-- Qg
5
--10
--8
V
I
= --15V
DS
= --55A
3
2
I
= --165A
PW≤10μs
DP
D
--100
I
= --55A
7
5
D
3
2
--6
--10
7
5
Operation in
this area is
limited by R (on).
--4
3
2
DS
--1.0
7
5
--2
0
3
2
Tc=25°C
Single pulse
--0.1
2
3
5
7
2
3
5
7
--10
2
3
5
0
5
10
15
20
25
30
35
40
45
50
--0.1
--1.0
Total Gate Charge, Qg -- nC
IT15236
Drain-to-Source Voltage, V
DS
-- V
IT15237
P
-- Tc
E
-- Ta
D
AS
60
50
40
30
20
120
100
80
60
40
10
0
20
0
0
20
40
60
80
100
120
140
160
0
25
50
75
100
125
150
175
IT10478
IT15238
Ambient Temperature, Ta -- °C
Case Temperature, Tc -- °C
No. A1623-4/7
ATP103
Taping Specification
ATP103-TL-H
No. A1623-5/7
ATP103
Outline Drawing
Land Pattern Example
ATP103-TL-H
Mass (g) Unit
Unit: mm
0.266
mm
* For reference
6.5
1.5
2.3
2.3
No. A1623-6/7
ATP103
Note on usage : Since the ATP103 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1623-7/7
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