ATP208-TL-H [ONSEMI]

N 沟道,功率 MOSFET,40V,90A,6mΩ;
ATP208-TL-H
型号: ATP208-TL-H
厂家: ONSEMI    ONSEMI
描述:

N 沟道,功率 MOSFET,40V,90A,6mΩ

文件: 总7页 (文件大小:339K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Ordering number : ENA1396A  
ATP208  
N-Channel Power MOSFET  
http://onsemi.com  
Ω
40V, 90A, 6m , Single ATPAK  
Features  
Low ON-resistance  
4.5V drive  
Halogen free compliance  
Large current  
Slim package  
Protection diode in  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
40  
DSS  
V
±20  
V
GSS  
I
90  
A
D
Drain Current (PW 10 s)  
I
DP  
PW 10 s, duty cycle 1%  
270  
A
μ
μ
Allowable Power Dissipation  
Channel Temperature  
P
Tc=25 C  
60  
150  
W
°
D
Tch  
C
C
°
°
Storage Temperature  
Tstg  
--55 to +150  
155  
Avalanche Energy (Single Pulse) *1  
Avalanche Current *2  
E
mJ  
A
AS  
I
AV  
45  
Note : 1 V =15V, L=100 H, I =45A  
*
μ
DD  
2 L 100 H, Single pulse  
AV  
*
μ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
Product & Package Information  
Package Dimensions  
unit : mm (typ)  
• Package  
: ATPAK  
7057-001  
• JEITA, JEDEC  
: -  
• Minimum Packing Quantity : 3,000 pcs./reel  
ATP208-TL-H  
Packing Type: TL  
Marking  
1.5  
6.5  
4.6  
2.6  
0.4  
0.4  
ATP208  
4
LOT No.  
TL  
Electrical Connection  
2,4  
2
0.55  
1
3
0.8  
0.6  
1 : Gate  
0.4  
2.3  
2.3  
2 : Drain  
3 : Source  
4 : Drain  
1
3
ATPAK  
Semiconductor Components Industries, LLC, 2013  
July, 2013  
61312 TKIM/11409PA MS IM TC-00001776 No. A1396-1/7  
ATP208  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0V  
40  
V
μA  
μA  
V
(BR)DSS  
D
GS  
=40V, V =0V  
I
I
V
V
V
V
1
DSS  
DS  
GS  
DS  
DS  
GS  
=±16V, V =0V  
DS  
±10  
2.6  
GSS  
V
(off)  
GS  
=10V, I =1mA  
1.5  
16  
D
Forward Transfer Admittance  
| yfs |  
=10V, I =45A  
28  
S
D
R
R
(on)1  
(on)2  
I
I
=45A, V =10V  
GS  
4.6  
7
6.0  
9.8  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
DS  
D
D
Static Drain-to-Source On-State Resistance  
=23A, V =4.5V  
GS  
DS  
Input Capacitance  
Ciss  
4510  
535  
385  
35  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Coss  
Crss  
V
=20V, f=1MHz  
DS  
t
t
t
t
(on)  
d
r
400  
280  
200  
83  
ns  
See specied Test Circuit.  
Turn-OFF Delay Time  
Fall Time  
(off)  
ns  
d
f
ns  
Total Gate Charge  
Qg  
nC  
nC  
nC  
V
Gate-to-Source Charge  
Gate-to-Drain “Miller” Charge  
Diode Forward Voltage  
Qgs  
Qgd  
V
=20V, V =10V, I =90A  
GS  
19  
DS  
D
17  
V
SD  
I =90A, V =0V  
GS  
1.0  
1.2  
S
Switching Time Test Circuit  
V
IN  
V =20V  
DD  
10V  
0V  
I
=45A  
D
V
IN  
R =0.44Ω  
L
D
V
OUT  
PW=10μs  
D.C.1%  
G
ATP208  
P. G  
50Ω  
S
Ordering Information  
Device  
Package  
ATPAK  
Shipping  
3,000pcs./reel  
memo  
ATP208-TL-H  
Pb Free and Halogen Free  
No. A1396-2/7  
ATP208  
I
D
-- V  
DS  
I
-- V  
D GS  
90  
80  
70  
60  
50  
40  
30  
20  
140  
120  
100  
80  
Tc=25°C  
V
=10V  
DS  
60  
40  
20  
0
10  
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5  
IT14323  
Drain-to-Source Voltage, V  
-- V  
IT14322  
Gate-to-Source Voltage, V -- V  
GS  
DS  
R
(on) -- V  
R
(on) -- Tc  
DS  
GS  
DS  
16  
14  
12  
10  
8
14  
12  
10  
8
Tc=25°C  
Single pulse  
Single pulse  
I =23A  
D
45A  
6
6
4
4
2
0
2
0
0
2
4
6
8
10  
12  
14  
16  
--60 --40 --20  
0
20  
40  
60  
80 100 120 140 160  
Gate-to-Source Voltage, V  
-- V  
Case Temperature, Tc -- °C  
IT14325  
IT14324  
GS  
| yfs | -- I  
I
-- V  
D
S SD  
7
5
3
2
V
=0V  
V
=10V  
GS  
DS  
100  
Single pulse  
7
5
3
2
3
2
10  
7
5
3
2
10  
1.0  
7
5
7
5
3
2
0.1  
3
2
7
5
3
2
0.01  
7
1.0  
5
3
2
7
3
0.1  
0.001  
2
3
5
7
2
3
5
7
2
3
5
7
2
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
IT14327  
1.0  
10  
100  
IT14326  
Diode Forward Voltage, V  
SD  
-- V  
Drain Current, I -- A  
D
SW Time -- I  
Ciss, Coss, Crss -- V  
D
DS  
10000  
1000  
f=1MHz  
V
V
=20V  
=10V  
DD  
GS  
7
7
5
5
3
2
3
2
t
f
1000  
100  
7
5
7
5
3
2
3
2
100  
10  
0.1  
0
5
10  
15  
20  
25  
30  
35  
40  
2
3
5
7
2
3
5
7
2
3
5
7
1.0  
10  
100  
IT14328  
Drain Current, I -- A  
Drain-to-Source Voltage, V -- V  
DS  
IT14329  
D
No. A1396-3/7  
ATP208  
A S O  
V
GS  
-- Qg  
10  
9
5
I
=270A  
PW10μs  
V
I
=20V  
DP  
DS  
=90A  
3
2
D
I
=90A  
D
100  
7
5
8
7
3
2
6
10  
7
5
5
Operation in this area  
is limited by R (on).  
4
3
2
DS  
3
1.0  
7
5
2
3
2
1
0
Tc=25°C  
Single pulse  
0.1  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
2
3
5
7
2
3
5
7
2
3
5
7
0.1  
1.0  
10  
Total Gate Charge, Qg -- nC  
IT14330  
Drain-to-Source Voltage, V  
-- V  
IT14331  
DS  
P
-- Tc  
E
-- Ta  
D
AS  
120  
100  
80  
70  
60  
50  
40  
30  
20  
60  
40  
20  
0
10  
0
0
25  
50  
75  
100  
125  
150  
175  
IT10478  
0
20  
40  
60  
80  
100  
120  
140  
160  
Case Temperature, Tc -- °C  
IT14332  
Ambient Temperature, Ta -- °C  
No. A1396-4/7  
ATP208  
Taping Specication  
ATP208-TL-H  
No. A1396-5/7  
ATP208  
Outline Drawing  
Land Pattern Example  
ATP208-TL-H  
Mass (g) Unit  
Unit: mm  
0.266  
mm  
* For reference  
6.5  
1.5  
2.3  
2.3  
No. A1396-6/7  
ATP208  
Note on usage : Since the ATP208 is a MOSFET product, please avoid using this device in the vicinity of  
highly charged objects.  
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number  
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at  
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no  
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the  
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual  
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical  
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use  
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in  
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for  
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors  
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or  
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the  
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PS No. A1396-7/7  

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