ATP208-TL-H [ONSEMI]
N 沟道,功率 MOSFET,40V,90A,6mΩ;型号: | ATP208-TL-H |
厂家: | ONSEMI |
描述: | N 沟道,功率 MOSFET,40V,90A,6mΩ |
文件: | 总7页 (文件大小:339K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : ENA1396A
ATP208
N-Channel Power MOSFET
http://onsemi.com
Ω
40V, 90A, 6m , Single ATPAK
Features
•
•
•
•
•
•
Low ON-resistance
4.5V drive
Halogen free compliance
Large current
Slim package
Protection diode in
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
40
DSS
V
±20
V
GSS
I
90
A
D
Drain Current (PW 10 s)
I
DP
PW 10 s, duty cycle 1%
270
A
≤
μ
≤
μ
≤
Allowable Power Dissipation
Channel Temperature
P
Tc=25 C
60
150
W
°
D
Tch
C
C
°
°
Storage Temperature
Tstg
--55 to +150
155
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
mJ
A
AS
I
AV
45
Note : 1 V =15V, L=100 H, I =45A
*
μ
DD
2 L 100 H, Single pulse
AV
*
≤
μ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: ATPAK
7057-001
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
ATP208-TL-H
Packing Type: TL
Marking
1.5
6.5
4.6
2.6
0.4
0.4
ATP208
4
LOT No.
TL
Electrical Connection
2,4
2
0.55
1
3
0.8
0.6
1 : Gate
0.4
2.3
2.3
2 : Drain
3 : Source
4 : Drain
1
3
ATPAK
Semiconductor Components Industries, LLC, 2013
July, 2013
61312 TKIM/11409PA MS IM TC-00001776 No. A1396-1/7
ATP208
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
40
V
μA
μA
V
(BR)DSS
D
GS
=40V, V =0V
I
I
V
V
V
V
1
DSS
DS
GS
DS
DS
GS
=±16V, V =0V
DS
±10
2.6
GSS
V
(off)
GS
=10V, I =1mA
1.5
16
D
Forward Transfer Admittance
| yfs |
=10V, I =45A
28
S
D
R
R
(on)1
(on)2
I
I
=45A, V =10V
GS
4.6
7
6.0
9.8
mΩ
mΩ
pF
pF
pF
ns
DS
D
D
Static Drain-to-Source On-State Resistance
=23A, V =4.5V
GS
DS
Input Capacitance
Ciss
4510
535
385
35
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=20V, f=1MHz
DS
t
t
t
t
(on)
d
r
400
280
200
83
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
ns
d
f
ns
Total Gate Charge
Qg
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=20V, V =10V, I =90A
GS
19
DS
D
17
V
SD
I =90A, V =0V
GS
1.0
1.2
S
Switching Time Test Circuit
V
IN
V =20V
DD
10V
0V
I
=45A
D
V
IN
R =0.44Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
ATP208
P. G
50Ω
S
Ordering Information
Device
Package
ATPAK
Shipping
3,000pcs./reel
memo
ATP208-TL-H
Pb Free and Halogen Free
No. A1396-2/7
ATP208
I
D
-- V
DS
I
-- V
D GS
90
80
70
60
50
40
30
20
140
120
100
80
Tc=25°C
V
=10V
DS
60
40
20
0
10
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
IT14323
Drain-to-Source Voltage, V
-- V
IT14322
Gate-to-Source Voltage, V -- V
GS
DS
R
(on) -- V
R
(on) -- Tc
DS
GS
DS
16
14
12
10
8
14
12
10
8
Tc=25°C
Single pulse
Single pulse
I =23A
D
45A
6
6
4
4
2
0
2
0
0
2
4
6
8
10
12
14
16
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
Case Temperature, Tc -- °C
IT14325
IT14324
GS
| yfs | -- I
I
-- V
D
S SD
7
5
3
2
V
=0V
V
=10V
GS
DS
100
Single pulse
7
5
3
2
3
2
10
7
5
3
2
10
1.0
7
5
7
5
3
2
0.1
3
2
7
5
3
2
0.01
7
1.0
5
3
2
7
3
0.1
0.001
2
3
5
7
2
3
5
7
2
3
5
7
2
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT14327
1.0
10
100
IT14326
Diode Forward Voltage, V
SD
-- V
Drain Current, I -- A
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
10000
1000
f=1MHz
V
V
=20V
=10V
DD
GS
7
7
5
5
3
2
3
2
t
f
1000
100
7
5
7
5
3
2
3
2
100
10
0.1
0
5
10
15
20
25
30
35
40
2
3
5
7
2
3
5
7
2
3
5
7
1.0
10
100
IT14328
Drain Current, I -- A
Drain-to-Source Voltage, V -- V
DS
IT14329
D
No. A1396-3/7
ATP208
A S O
V
GS
-- Qg
10
9
5
I
=270A
PW≤10μs
V
I
=20V
DP
DS
=90A
3
2
D
I
=90A
D
100
7
5
8
7
3
2
6
10
7
5
5
Operation in this area
is limited by R (on).
4
3
2
DS
3
1.0
7
5
2
3
2
1
0
Tc=25°C
Single pulse
0.1
0
10
20
30
40
50
60
70
80
90
2
3
5
7
2
3
5
7
2
3
5
7
0.1
1.0
10
Total Gate Charge, Qg -- nC
IT14330
Drain-to-Source Voltage, V
-- V
IT14331
DS
P
-- Tc
E
-- Ta
D
AS
120
100
80
70
60
50
40
30
20
60
40
20
0
10
0
0
25
50
75
100
125
150
175
IT10478
0
20
40
60
80
100
120
140
160
Case Temperature, Tc -- °C
IT14332
Ambient Temperature, Ta -- °C
No. A1396-4/7
ATP208
Taping Specification
ATP208-TL-H
No. A1396-5/7
ATP208
Outline Drawing
Land Pattern Example
ATP208-TL-H
Mass (g) Unit
Unit: mm
0.266
mm
* For reference
6.5
1.5
2.3
2.3
No. A1396-6/7
ATP208
Note on usage : Since the ATP208 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
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PS No. A1396-7/7
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