ATP213-TL-H [ONSEMI]

N 沟道，功率 MOSFET，60V，50A，16mΩ，单 ATPAK;


型号：	ATP213-TL-H
厂家：	ONSEMI
描述：	N 沟道，功率 MOSFET，60V，50A，16mΩ，单 ATPAK
文件：	总7页 (文件大小：338K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Ordering number : ENA1526A

ATP213

N-Channel Power MOSFET

http://onsemi.com

60V, 50A, 16m , Single ATPAK

Features

•

Low ON-resistance

4V drive

Halogen free compliance

Large current

Slim package

Protection diode in

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

DSS

±20

GSS

Drain Current (PW 10 s)

PW 10 s, duty cycle 1%

150

≤

Allowable Power Dissipation

Channel Temperature

Tc=25 C

Tch

150

Storage Temperature

Tstg

--55 to +150

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

Note : 1 V =10V, L=100 H, I =25A

2 L 100 H, Single pulse

≤

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: ATPAK

7057-001

• JEITA, JEDEC

: -

• Minimum Packing Quantity : 3,000 pcs./reel

ATP213-TL-H

1.5

Packing Type: TL

Marking

6.5

4.6

2.6

0.4

ATP213

LOT No.

Electrical Connection

2,4

0.55

0.8

0.6

1 : Gate

0.4

2.3

2 : Drain

3 : Source

4 : Drain

ATPAK

Semiconductor Components Industries, LLC, 2013

July, 2013

62012 TKIM/80509PA TK IM TC-00002021 No. A1526-1/7

ATP213

at Ta=25°C

Electrical Characteristics

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=1mA, V =0V

μA

(BR)DSS

=60V, V =0V

DSS

=±16V, V =0V

±10

2.6

GSS

(off)

=10V, I =1mA

1.2

Forward Transfer Admittance

| yfs |

=10V, I =25A

(on)1

(on)2

(on)3

=25A, V =10V

mΩ

Static Drain-to-Source On-State Resistance

=13A, V =4.5V

=7A, V =4V

Input Capacitance

Ciss

3150

310

190

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Coss

Crss

=20V, f=1MHz

(on)

170

230

150

See speciﬁed Test Circuit.

Turn-OFF Delay Time

Fall Time

(off)

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

Qgs

Qgd

=30V, V =10V, I =50A

10.5

12.5

1.01

I =50A, V =0V

1.2

Switching Time Test Circuit

V =30V

10V

=25A

R =1.2Ω

OUT

PW=10μs

D.C.≤1%

ATP213

P. G

50Ω

Ordering Information

Device

Package

ATPAK

Shipping

3,000pcs./reel

memo

ATP213-TL-H

Pb Free and Halogen Free

No. A1526-2/7

ATP213

-- V

D GS

Tc=25°C

Single pulse

=10V

Single pulse

=3.0V

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

Drain-to-Source Voltage, V

-- V

IT14837

Gate-to-Source Voltage, V -- V

IT14838

(on) -- V

(on) -- Tc

Tc=25°C

Single pulse

I =7A

13A

25A

10 11 12 13 14 15 16

--50

--25

100

125

150

Gate-to-Source Voltage, V

-- V

Case Temperature, Tc -- °C

IT14840

IT14839

| yfs | -- I

-- V

S SD

100

=0V

=10V

Single pulse

1.0

0.1

0.01

1.0

0.1

0.001

0.2

0.4

0.6

0.8

1.0

1.2

1.4

IT14842

1.0

100

IT14841

Diode Forward Voltage, V

-- V

Drain Current, I -- A

SW Time -- I

Ciss, Coss, Crss -- V

f=1MHz

=30V

=10V

1000

100

0.1

IT14844

1.0

100

IT14843

Drain Current, I -- A

Drain-to-Source Voltage, V

-- V

No. A1526-3/7

ATP213

A S O

-- Qg

=30V

2 I =150A

PW≤10μs

=50A

100

I =50A

Operation in this area

is limited by R (on).

1.0

²Tc=25°C

Single pulse

0.1

IT14845

5 7

100

IT14846

0.1

1.0

Total Gate Charge, Qg -- nC

Drain-to-Source Voltage, V

-- V

-- Tc

-- Ta

120

100

125

150

175

IT10478

100

120

140

160

Case Temperature, Tc -- °C

IT14847

Ambient Temperature, Ta -- °C

No. A1526-4/7

ATP213

Taping Speciﬁcation

ATP213-TL-H

No. A1526-5/7

ATP213

Outline Drawing

Land Pattern Example

ATP213-TL-H

Mass (g) Unit

Unit: mm

0.266

* For reference

6.5

1.5

2.3

No. A1526-6/7

ATP213

Note on usage : Since the ATP213 is a MOSFET product, please avoid using this device in the vicinity of

highly charged objects.

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number

of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at

www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no

warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the

application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental

damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual

performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical

experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use

as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in

which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for

any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors

harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or

death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the

part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PS No. A1526-7/7

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