ATP214-TL-H [ONSEMI]
N 沟道，功率 MOSFET，60V，75A，8.1mΩ，单 ATPAK;
| 型号： | ATP214-TL-H |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，功率 MOSFET，60V，75A，8.1mΩ，单 ATPAK |
| 文件： | 总7页 (文件大小：369K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1712A
ATP214
N-Channel Power MOSFET
http://onsemi.com
Ω
60V, 75A, 8.1m , Single ATPAK
Features
•
•
•
•
•
ON-resistance R (on)1=6.2m (typ.)
4V drive
Protection diode in
Input Capacitance Ciss=4850pF(typ.)
Halogen free compliance
Ω
DS
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
60
±20
75
DSS
V
V
GSS
I
A
D
Drain Current (PW 10 s)
I
PW 10 s, duty cycle 1%
225
60
A
≤
μ
≤
μ
≤
DP
Allowable Power Dissipation
Channel Temperature
P
Tc=25 C
W
°
D
Tch
150
C
C
°
°
Storage Temperature
Tstg
--55 to +150
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
94
38
mJ
A
AS
I
AV
Note : 1 V =15V, L=100 H, I =38A
*
μ
DD
2 L 100 H, Single pulse
AV
*
≤
μ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: ATPAK
7057-001
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
ATP214-TL-H
1.5
6.5
Packing Type: TL
Marking
4.6
2.6
0.4
0.4
ATP214
LOT No.
4
TL
Electrical Connection
2,4
2
0.55
1
3
0.8
0.6
1 : Gate
0.4
2.3
2.3
2 : Drain
3 : Source
4 : Drain
1
3
ATPAK
Semiconductor Components Industries, LLC, 2013
July, 2013
62012 TKIM/70710PA TKIM TC-00002343 No. A1712-1/7
ATP214
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
60
V
μA
μA
V
(BR)DSS
D
GS
=60V, V =0V
I
I
V
V
V
V
1
DSS
DS
GS
DS
DS
GS
=±16V, V =0V
DS
±10
2.6
GSS
V
(off)
GS
=10V, I =1mA
1.2
D
Forward Transfer Admittance
| yfs |
=10V, I =38A
100
6.2
S
D
R
R
R
(on)1
(on)2
(on)3
I
I
I
=38A, V =10V
GS
8.1
11.5
14
mΩ
mΩ
mΩ
pF
pF
pF
ns
DS
DS
DS
D
D
D
Static Drain-to-Source On-State Resistance
=19A, V =4.5V
GS
8.2
=10A, V =4V
GS
9.2
Input Capacitance
Ciss
4850
370
280
30
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=20V, f=1MHz
DS
t
t
t
t
(on)
d
r
240
360
250
96
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
ns
d
f
ns
Total Gate Charge
Qg
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=30V, V =10V, I =75A
GS
18.5
18
DS
D
V
SD
I =75A, V =0V
GS
0.93
1.2
S
Switching Time Test Circuit
V
IN
V =30V
DD
10V
0V
I
=38A
D
V
IN
R =0.79Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
ATP214
P. G
50Ω
S
Ordering Information
Device
Package
ATPAK
Shipping
3,000pcs./reel
memo
ATP214-TL-H
Pb Free and Halogen Free
No. A1712-2/7
ATP214
I
-- V
DS
I
-- V
D
D GS
75
70
65
60
55
50
45
40
35
30
25
20
15
10
100
90
80
70
60
50
40
30
20
Tc=25°C
V
=10V
DS
=2.5V
V
GS
10
0
5
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Drain-to-Source Voltage, V
-- V
IT15694
Gate-to-Source Voltage, V
GS
-- V
IT15695
DS
R
(on) -- V
R
(on) -- Tc
DS
GS
DS
20
18
16
14
12
10
8
20
18
16
14
12
10
8
Tc=25°C
Single pulse
Single pulse
I =10A
D
19A
38A
6
6
4
4
2
2
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
Case Temperature, Tc -- °C
IT15697
IT15696
GS
| yfs | -- I
I
-- V
D
S SD
3
2
3
2
V
=0V
GS
Single pulse
V
=10V
DS
100
Single pulse
7
5
100
7
3
2
10
5
7
5
3
2
3
2
1.0
7
5
10
7
3
2
0.1
5
7
5
3
2
3
2
0.01
7
5
1.0
3
2
7
5
0.1
0.001
2
3
5
7
2
3
5
7
2
3
5
7
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT15699
1.0
10
Diode Forward Voltage, V
SD
-- V
Drain Current, I -- A
IT15698
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
10000
1000
V
V
=30V
=10V
f=1MHz
DD
GS
7
7
5
5
3
2
3
2
1000
100
7
5
7
5
3
2
3
2
100
7
10
0.1
0
10
20
30
40
50
60
IT15701
2
3
5
7
2
3
5
7
2
3
5
7
2
1.0
10
100
IT15700
Drain Current, I -- A
Drain-to-Source Voltage, V
DS
-- V
D
No. A1712-3/7
ATP214
A S O
V
GS
-- Qg
5
10
9
V
I
=30V
DS
=75A
I
I
=225A (PW≤10μs)
3
2
DP
D
=75A
100
7
5
8
D
7
3
2
6
10
7
5
5
Operation in
this area is
limited by R (on).
3
2
4
DS
3
1.0
7
5
2
3
2
1
0
Tc=25°C
Single pulse
0.1
0.1
0
10
20
30
40
50
60
70
80
90
100
2
3
5
7
2
3
5
7
2
3
5 7
100
IT15514
1.0
10
Total Gate Charge, Qg -- nC
IT15711
Drain-to-Source Voltage, V -- V
DS
P
-- Tc
E
-- Ta
D
AS
70
60
50
40
30
20
120
100
80
60
40
20
0
10
0
0
20
40
60
80
100
120
140
160
0
25
50
75
100
125
150
175
IT15179
IT15513
Ambient Temperature, Ta -- °C
Case Temperature, Tc -- °C
No. A1712-4/7
ATP214
Taping Specification
ATP214-TL-H
No. A1712-5/7
ATP214
Outline Drawing
Land Pattern Example
ATP214-TL-H
Mass (g) Unit
Unit: mm
0.266
mm
* For reference
6.5
1.5
2.3
2.3
No. A1712-6/7
ATP214
Note on usage : Since the ATP214 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1712-7/7
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