BAS16HT3G [ONSEMI]
100 V 开关二极管;
| 型号： | BAS16HT3G |
| 厂家： | 
ONSEMI |
| 描述： | 100 V 开关二极管 开关 二极管 |
| 文件： | 总4页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS16H, SBAS16H
Switching Diode
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
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• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
2
CATHODE
ANODE
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Symbol
Value
100
Unit
Vdc
2
V
R
I
F
200
mAdc
mAdc
1
Non−Repetitive Peak Forward Surge
Current, 60 Hz
I
500
FSM(surge)
SOD−323
Non−Repetitive Peak Forward Current
I
A
CASE 477
STYLE 1
FSM
(Square Wave, T = 25°C prior to
J
surge)
t = 1 ms
t = 10 ms
t = 100 ms
t = 1 ms
t = 1 s
36.0
18.0
6.0
MARKING DIAGRAM
3.0
0.7
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A6 M
A6 = Specific Device Code
THERMAL CHARACTERISTICS
M
= Date Code
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board
(Note 1)
P
D
200
mW
ORDERING INFORMATION
T = 25°C
1.57
635
mW/°C
A
Device
BAS16HT1G
Package
Shipping†
Derate above 25°C
SOD−323
(Pb−Free)
3000 / Tape & Reel
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
R
°C/W
°C
q
JA
T , T
J
−55 to
150
stg
SBAS16HT1G SOD−323
(Pb−Free)
3000 /T ape & Reel
1. FR-4 Minimum Pad.
SBAS16HT3G SOD−323 10000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
June, 2013 − Rev. 10
BAS16HT1/D
BAS16H, SBAS16H
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V = 100 Vdc)
I
R
mAdc
−
−
−
1.0
50
30
R
(V = 75 Vdc, T = 150°C)
R
J
(V = 25 Vdc, T = 150°C)
R
J
Reverse Breakdown Voltage
(I = 100 mAdc)
BR
V
100
−
Vdc
mV
(BR)
Forward Voltage
V
F
(I = 1.0 mAdc)
−
−
−
−
715
855
1000
1250
F
(I = 10 mAdc)
F
(I = 50 mAdc)
F
(I = 150 mAdc)
F
Diode Capacitance
(V = 0, f = 1.0 MHz)
R
C
−
−
−
−
2.0
1.75
6.0
45
pF
Vdc
ns
D
Forward Recovery Voltage
V
FR
(I = 10 mAdc, t = 20 ns)
F
r
Reverse Recovery Time
(I = I = 10 mAdc, R = 50 W)
t
rr
F
R
L
Stored Charge
(I = 10 mAdc to V = 5.0 Vdc,
Q
pC
S
F
R
R = 500 W)
L
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2
BAS16H, SBAS16H
820 W
I
F
+10 V
t
r
t
p
t
2.0 k
0.1 mF
I
F
t
t
100 mH
rr
10%
90%
0.1 mF
D.U.T.
i
= 1.0 mA
R(REC)
50 W OUTPUT
PULSE
50 W INPUT
SAMPLING
I
R
V
R
OUTPUT PULSE
(I = I = 10 mA; MEASURED
GENERATOR
OSCILLOSCOPE
INPUT SIGNAL
F
R
at i
= 1.0 mA)
R(REC)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
10
100
10
T = 150°C
A
T = 85°C
A
T = 125°C
A
1.0
T = -ꢀ40°C
A
T = 85°C
A
0.1
T = 55°C
A
1.0
T = 25°C
A
0.01
T = 25°C
A
0.001
0.1
0.2
50
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 2. Forward Voltage
Figure 3. Leakage Current
40
35
0.68
0.64
Based on square wave currents
T = 25°C prior to surge
J
30
25
20
15
10
5
0.60
0.56
0.52
0
0
2
4
6
8
0.0001
0.001
0.01
0.1
1
10
V , REVERSE VOLTAGE (V)
R
T (mSec)
p
Figure 4. Capacitance
Figure 5. Maximum Non−repetitive Peak
Forward Current as a Function of Pulse
Duration, Typical Values
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3
BAS16H, SBAS16H
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
H
D
E
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
1
E
b
2
MILLIMETERS
DIM MIN NOM MAX
0.80
INCHES
NOM MAX
1.00 0.031 0.035 0.040
0.10 0.000 0.002 0.004
0.006 REF
MIN
A
0.90
0.05
A1 0.00
A3
0.15 REF
0.32
A3
A
b
C
D
E
L
0.25
0.089
1.60
1.15
0.08
2.30
0.4 0.010 0.012 0.016
0.12 0.177 0.003 0.005 0.007
1.70
1.25
1.80 0.062 0.066 0.070
1.35 0.045 0.049 0.053
0.003
H
2.50
2.70 0.090 0.098 0.105
E
STYLE 1:
L
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
A1
C
NOTE 5
NOTE 3
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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BAS16HT1/D
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