BASH16MX2WT5G [ONSEMI]
High Voltage Switching Diode Series, +175°C;型号: | BASH16MX2WT5G |
厂家: | ONSEMI |
描述: | High Voltage Switching Diode Series, +175°C |
文件: | 总6页 (文件大小:196K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
High Voltage Switching
Diodes
1
CATHODE
2
ANODE
MARKING
DIAGRAM
BASH16MX2W
The BASHxxMX2W Switching Diode is a spin−off of our popular
SOT−23 three−leaded device. It is designed for switching applications
and is housed in the X2DFNW2 (1.0x0.6mm) surface mount package.
This device is ideal for low−power surface mount applications, where
board space is at a premium.
X2DFNW2
CASE 711BG
XXM
XX = Specific Device Code
= Date Code
M
Features
• 175°C T
− Rated for High Temperature, Mission Critical
J(max)
Applications
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 4 of this data sheet.
• Wettable Flank Package for optimal Automated Optical Inspection
(AOI)
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
V ,
Value
Unit
Continuous Reverse Voltage
BASH16
Vdc
R
V
100
120
200
250
RRM
BASH19
BASH20
BASH21
Continuous Forward Current
I
200
500
mAdc
mA
F
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
I
FRM
Non−Repetitive Peak Forward Current
I
A
FSM
(Square Wave, T = 25°C prior to surge)
J
BASH16
t = 1 ms
t = 1 ms
t = 1 s
5.0
2.0
0.5
9.0
3.0
1.7
BASH19/20/21 t = 1 ms
t = 1 ms
t = 1 s
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
A
P
D
T = 25°C (Note 1)
300
400
mW
Thermal Resistance Junction−to−Ambient
(Note 1)
R
°C/W
q
JA
Thermal Resistance Junction−to−Solder
R
105
°C/W
°C
q
JSP
Point (Note 1)
Junction and Storage Temperature Range
T , T
J
−55 to
+175
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06″ thick single
sided. Operating to steady state.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
May, 2023 − Rev. 2
BASH16MX2W/D
BASH16MX2W
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Reverse Voltage Leakage Current
I
R
mAdc
(V = 80 Vdc)
BASH16
BASH19
BASH20
BASH21
BASH16
BASH16
BASH19
BASH20
BASH21
−
−
−
−
−
−
−
−
−
0.5
0.1
0.1
0.1
50
R
(V = 100 Vdc)
R
(V = 150 Vdc)
R
(V = 200 Vdc)
R
(V = 80 Vdc, T = 150°C)
R
J
(V = 25 Vdc, T = 150°C)
30
R
J
(V = 100 Vdc, T = 150°C)
100
100
100
R
J
(V = 150 Vdc, T = 150°C)
R
J
(V = 200 Vdc, T = 150°C)
R
J
Reverse Breakdown Voltage (I = 100 mAdc)
V
Vdc
Vdc
BR
(BR)
BASH16
BASH19
BASH20
BASH21
100
120
200
250
−
−
−
−
Forward Voltage
V
C
F
(I = 100 mAdc)
−
−
1.0
1.25
F
(I = 200 mAdc)
F
Diode Capacitance (V = 0, f = 1.0 MHz)
−
3.0
pF
ns
R
D
Reverse Recovery Time
t
rr
(I = I = 10 mAdc, R = 50 W)
BASH16
BASH19/20/21
−
−
6.0
50
F
R
L
(I = I = 30 mAdc, R = 100 W)
F
R
L
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 W
I
F
+10 V
t
r
t
p
t
2.0 k
0.1 mF
I
F
t
t
100 mH
rr
10%
90%
0.1 mF
D.U.T.
i
= 1.0 mA
R(REC)
50 W OUTPUT
PULSE
50 W INPUT
SAMPLING
I
R
V
R
OUTPUT PULSE
(I = I = 10 mA; MEASURED
GENERATOR
OSCILLOSCOPE
INPUT SIGNAL
F
R
at i
= 1.0 mA)
R(REC)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
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2
BASH16MX2W
TYPICAL CHARACTERISTICS
1
1.2
1.0
125°C
75°C
0.1
0.8
BAS20
25°C
0.6
BAS21
150°C
0°C
0.4
0.2
0.0
0.01
BAS16
5
BAS19
175°C
−40°C
0.001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0
0
10
15
20
25
30
35
40
V , FORWARD VOLTAGE (V)
V , REVERSE VOLTAGE (V)
F
R
Figure 2. Forward Voltage
Figure 3. Total Capacitance
100
10
100
10
1
175°C
150°C
125°C
175°C
150°C
125°C
1
75°C
25°C
0.1
75°C
0.1
0.01
0.01
0.001
25°C
0°C
0°C
0.001
0.0001
0.00001
−40°C
−40°C
0.0001
0
20
40
60
80
100
120
20
40
60
80
100
120
V , REVERSE VOLTAGE (V)
R
V , REVERSE VOLTAGE (V)
R
Figure 4. Reverse Current − BASH16
Figure 5. Reverse Current − BASH19
100
10
100
10
175°C
175°C
150°C
125°C
150°C
125°C
1
1
0.1
0.01
0.1
0.01
75°C
75°C
0°C
25°C
25°C
0.001
0.001
−40°C
0°C
−40°C
0.0001
0.0001
0
50
100
150
200
250
50
100
150
200
250
V , REVERSE VOLTAGE (V)
R
V , REVERSE VOLTAGE (V)
R
Figure 6. Reverse Current − BASH20
Figure 7. Reverse Current − BASH21
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3
BASH16MX2W
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
BASH16MX2WT5G,
NSVBASH16MX2WT5G*
MF
BASH19MX2WT5G,
ME
MG
MH
NSVBASH19MX2WT5G*
X2DFN2
(Pb−Free)
8000 / Tape & Reel
BASH20MX2WT5G,
NSVBASH20MX2WT5G*
BASH21MX2WT5G,
NSVBASH21MX2WT5G*
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
X2DFNW2 1.0x0.6, 0.65P
CASE 711BG
ISSUE C
SCALE 8:1
DATE 13 SEP 2019
GENERIC
MARKING DIAGRAM*
XXM
XX = Specific Device Code
M
= Date Code
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON15241G
X2DFNW2 1.0X0.6, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
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