BASH20MX2WT5G [ONSEMI]

High Voltage Switching Diode Series, +175°C;


型号：	BASH20MX2WT5G
厂家：	ONSEMI
描述：	High Voltage Switching Diode Series, +175°C
文件：	总6页 (文件大小：196K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

www.onsemi.com

High Voltage Switching

Diodes

CATHODE

ANODE

MARKING

DIAGRAM

BASH16MX2W

The BASHxxMX2W Switching Diode is a spin−off of our popular

SOT−23 three−leaded device. It is designed for switching applications

and is housed in the X2DFNW2 (1.0x0.6mm) surface mount package.

This device is ideal for low−power surface mount applications, where

board space is at a premium.

X2DFNW2

CASE 711BG

XXM

XX = Specific Device Code

= Date Code

Features

• 175°C T

− Rated for High Temperature, Mission Critical

J(max)

Applications

ORDERING INFORMATION

See detailed ordering, marking and shipping information on

page 4 of this data sheet.

• Wettable Flank Package for optimal Automated Optical Inspection

(AOI)

• NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating

Symbol

V ,

Value

Unit

Continuous Reverse Voltage

BASH16

Vdc

100

120

200

250

RRM

BASH19

BASH20

BASH21

Continuous Forward Current

200

500

mAdc

Repetitive Peak Forward Current

(Pulse Wave = 1 sec, Duty Cycle = 66%)

FRM

Non−Repetitive Peak Forward Current

FSM

(Square Wave, T = 25°C prior to surge)

BASH16

t = 1 ms

t = 1 s

5.0

2.0

0.5

9.0

3.0

1.7

BASH19/20/21 t = 1 ms

t = 1 ms

t = 1 s

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board

T = 25°C (Note 1)

300

400

Thermal Resistance Junction−to−Ambient

(Note 1)

°C/W

Thermal Resistance Junction−to−Solder

105

°C/W

°C

JSP

Point (Note 1)

Junction and Storage Temperature Range

T , T

−55 to

+175

stg

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06″ thick single

sided. Operating to steady state.

Publication Order Number:

May, 2023 − Rev. 2

BASH16MX2W/D

BASH16MX2W

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Reverse Voltage Leakage Current

mAdc

(V = 80 Vdc)

BASH16

BASH19

BASH20

BASH21

BASH16

BASH19

BASH20

BASH21

−

0.5

0.1

(V = 100 Vdc)

(V = 150 Vdc)

(V = 200 Vdc)

(V = 80 Vdc, T = 150°C)

(V = 25 Vdc, T = 150°C)

(V = 100 Vdc, T = 150°C)

100

(V = 150 Vdc, T = 150°C)

(V = 200 Vdc, T = 150°C)

Reverse Breakdown Voltage (I = 100 mAdc)

Vdc

(BR)

BASH16

BASH19

BASH20

BASH21

100

120

200

250

−

Forward Voltage

(I = 100 mAdc)

−

1.0

1.25

(I = 200 mAdc)

Diode Capacitance (V = 0, f = 1.0 MHz)

−

3.0

Reverse Recovery Time

(I = I = 10 mAdc, R = 50 W)

BASH16

BASH19/20/21

−

6.0

(I = I = 30 mAdc, R = 100 W)

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

820 W

+10 V

2.0 k

0.1 mF

100 mH

10%

90%

0.1 mF

D.U.T.

= 1.0 mA

R(REC)

50 W OUTPUT

PULSE

50 W INPUT

SAMPLING

OUTPUT PULSE

(I = I = 10 mA; MEASURED

GENERATOR

OSCILLOSCOPE

INPUT SIGNAL

at i

= 1.0 mA)

R(REC)

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.

Notes: 2. Input pulse is adjusted so I

is equal to 10 mA.

R(peak)

Notes: 3. t » t

Figure 1. Recovery Time Equivalent Test Circuit

www.onsemi.com

BASH16MX2W

TYPICAL CHARACTERISTICS

1.2

1.0

125°C

75°C

0.1

0.8

BAS20

25°C

0.6

BAS21

150°C

0°C

0.4

0.2

0.0

0.01

BAS16

BAS19

175°C

−40°C

0.001

0.2

0.4

0.6

0.8

1.0

1.2

1.4

V , FORWARD VOLTAGE (V)

V , REVERSE VOLTAGE (V)

Figure 2. Forward Voltage

Figure 3. Total Capacitance

100

175°C

150°C

125°C

175°C

150°C

125°C

75°C

25°C

0.1

75°C

0.1

0.01

0.001

25°C

0°C

0.001

0.0001

0.00001

−40°C

0.0001

100

120

100

120

V , REVERSE VOLTAGE (V)

Figure 4. Reverse Current − BASH16

Figure 5. Reverse Current − BASH19

100

175°C

150°C

125°C

150°C

125°C

0.1

0.01

0.1

0.01

75°C

0°C

25°C

0.001

−40°C

0°C

−40°C

0.0001

100

150

200

250

100

150

200

250

V , REVERSE VOLTAGE (V)

Figure 6. Reverse Current − BASH20

Figure 7. Reverse Current − BASH21

www.onsemi.com

BASH16MX2W

DEVICE ORDERING INFORMATION

Device

†

Marking

Package

Shipping

BASH16MX2WT5G,

NSVBASH16MX2WT5G*

BASH19MX2WT5G,

NSVBASH19MX2WT5G*

X2DFN2

(Pb−Free)

8000 / Tape & Reel

BASH20MX2WT5G,

NSVBASH20MX2WT5G*

BASH21MX2WT5G,

NSVBASH21MX2WT5G*

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP

Capable.

www.onsemi.com

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

X2DFNW2 1.0x0.6, 0.65P

CASE 711BG

ISSUE C

SCALE 8:1

DATE 13 SEP 2019

GENERIC

MARKING DIAGRAM*

XXM

XX = Specific Device Code

= Date Code

*This information is generic. Please refer

to device data sheet for actual part

marking. Pb−Free indicator, “G”, may

or not be present. Some products may

not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON15241G

X2DFNW2 1.0X0.6, 0.65P

PAGE 1 OF 1

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