BAV103 [ONSEMI]
通用型高压二极管;型号: | BAV103 |
厂家: | ONSEMI |
描述: | 通用型高压二极管 高压 二极管 |
文件: | 总4页 (文件大小:168K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
High Voltage, General
Purpose Diode
Cathode Band
BAV103
Description
MiniMELF / SOD−80
A general purpose diode that couples high forward conductance fast
switching speed and high blocking voltages in a glass leadless LL−34
surface mount package. Placement of the expansion gap has no
relationship to the location of the cathode terminal which is indicated
by the first color band.
CASE 100AD
(Color Band Denotes Cathode)
MARKING DIAGRAM
Cathode Band (Black)
ABSOLUTE MAXIMUM RATINGS
A
(T = 25°C unless otherwise noted) (Note 1)
Symbol
Parameter
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Value
200
Units
V
W
IV
I
O
200
mA
mA
mA
A
I
F
500
(1st band denotes cathode terminal
and has wider width)
i
f
Recurrent Peak Forward Current
600
I
Non−repetitive Peak Forward Current
Pulse Width = 1.0 s
Pulse Width = 1.0 ms
BAV103 = Specific Device Code
FSM
1.0
4.0
ORDERING INFORMATION
T
Storage Temperature Range
−65 to +200
−65 to +200
°C
°C
STG
†
T
J
Operating Junction Temperature
Device
BAV103
Package
Shipping
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
SOD−80
2,500 Units /
Tape & Reel
(Pb−Free)
1. These ratings are limiting values above which the serviceability of any
semiconductor device may be impaired.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Symbol
Parameter
Power Dissipation
Value
500
Units
mW
P
D
Linear Derating Factor from T = 25°C
3.33
350
mW/°C
°C
A
R
Thermal Resistance, Junction to Ambient
q
JA
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
A
Symbol Parameter
Conditions
= 100 mA
R
Min
Max
Units
V
R
Breakdown
Voltage
I
250
−
V
I = 100 mA
−
−
−
−
−
1.00
1.25
100
100
5.0
V
V
Forward
Voltage
F
F
I = 200 mA
F
V
I
R
Reverse
Current
V
R
V
R
V
R
= 200 V
nA
mA
pF
= 200 V, T = 150°C
A
C
Total
Capacitance
= 0, f = 1.0 MHz
T
t
rr
Reverse Re- I = I = 30 mA,
−
50
ns
F
R
covery Time
I
= 1 mA, R = 100 W
RR
L
Product parametric performance is indicated in the Electrical Characteristics for
the listed test conditions, unless otherwise noted. Product performance may not
be indicated by the Electrical Characteristics if operated under different
conditions.
© Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
June, 2023 − Rev. 3
BAV103/D
BAV103
TYPICAL PERFORMANCE CHARACTERISTICS
8
100
HEAT−SINK MOUNTING, TC
4”x4”x0.15” COPPER PLATE
6
4
10
T
= 25°C
A
1
PULSE WIDTH = 300 ms
2
0
1% DUTY CYCLE
MOUNTED ON PC BOARD,
TA 0.5” (12.7 mm) LEAD LENGTH
60 Hz RESISTIVE OF INDUCTIVE LOAD
0.1
0
50
100
150
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
AMBIENT TEMPERATURE (°C)
FORWARD VOLTAGE (V)
Figure 1. Forward Current Derating Curve
Figure 2. Forward Characteristics
200
160
120
80
10
1
T
C
= 100°C
0.1
T
A
= 105°C
T
A
= 25°C
40
0
0.01
0
20
40
60
80
100
120 140
1
2
5
10
20
50
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
NUMBER OF CYCLES AT 60 Hz
Figure 3. Reverse Characteristics
Figure 4. Non−Repetitive Surge Current
400
T
= 25°C
A
100
50
f = 1.0 MHz
Visg = 50m Vp−p
10
1
5
10
50
100
REVERSE VOLTAGE (V)
Figure 5. Junction Capacitance
www.onsemi.com
2
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
MiniMELF / SOD−80
CASE 100AD
ISSUE O
DATE 30 APR 2012
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON79582E
MINIMELF / SOD−80
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
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