BC182BRL [ONSEMI]
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN;
| 型号： | BC182BRL |
| 厂家： | 
ONSEMI |
| 描述： | 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN |
| 文件： | 总3页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductort
BC182
BC182A
BC182B
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
BC182
50
Unit
Vdc
V
CEO
V
CBO
V
EBO
60
Vdc
6.0
Vdc
Collector Current — Continuous
I
C
100
mAdc
1
2
3
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.0
8.0
Watts
mW/°C
CASE 29–11, STYLE 17
TO–92 (TO–226AA)
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
COLLECTOR
1
Symbol
Max
357
125
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
q
JA
JC
2
R
q
BASE
3
EMITTER
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 2.0 mA, I = 0)
V
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
50
—
—
C
B
Collector–Base Breakdown Voltage
(I = 10 mA, I = 0)
60
—
—
—
—
C
E
Emitter–Base Breakdown Voltage
(I = 100 mA, I = 0)
6.0
V
E
C
Collector Cutoff Current
(V = 50 V, V = 0)
I
nA
nA
CBO
—
—
0.2
—
15
15
CB
BE
Emitter–Base Leakage Current
(V = 4.0 V, I = 0)
I
EBO
EB
C
Semiconductor Components Industries, LLC, 2001
190
Publication Order Number:
May, 2001 – Rev. 2
BC182/D
BC182
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h
FE
—
(I = 10 µA, V = 5.0 V)
BC182
40
—
—
—
—
C
CE
(I = 2.0 mA, V = 5.0 V)
BC182
120
120
180
80
500
220
500
—
C
CE
BC182A
BC182B
BC182
(I = 100 mA, V = 5.0 V)
C
CE
Collector–Emitter On Voltage
(I = 10 mA, I = 0.5 mA)
V
V
V
CE(sat)
—
—
0.07
0.2
0.25
0.6
C
B
(1)
(I = 100 mA, I = 5.0 mA)
C
B
Base–Emitter Saturation Voltage
—
—
1.2
V
V
BE(sat)
(1)
(I = 100 mA, I = 5.0 mA)
C
B
Base–Emitter On Voltage
(I = 100 µA, V = 5.0 V)
V
BE(on)
—
0.55
—
0.5
0.62
0.83
—
0.7
—
C
CE
(I = 2.0 mA, V = 5.0 V)
C
CE
(1)
(I = 100 mA, V = 5.0 V)
C
CE
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
f
T
MHz
(I = 0.5 mA, V = 3.0 V, f = 100 MHz)
—
100
—
C
CE
(I = 10 mA, V = 5.0 V, f = 100 MHz)
150
—
200
—
—
C
CE
Common Base Output Capacitance
(V = 10 V, I = 0, f = 1.0 MHz)
C
5.0
pF
pF
—
ob
CB
C
Common Base Input Capacitance
(V = 0.5 V, I = 0, f = 1.0 MHz)
C
—
8.0
—
ib
EB
C
Small–Signal Current Gain
h
fe
(I = 2.0 mA, V = 5.0 V, f = 1.0 kHz)
BC182
BC182A
BC182B
125
125
240
—
—
—
500
260
500
C
CE
Noise Figure
NF
dB
(I = 0.2 mA, V = 5.0 V, R = 2.0 kΩ, f = 1.0 kHz)
—
2.0
10
C
CE
S
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
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191
BC182
2.0
1.5
1.0
V
= 10 V
T = 25°C
A
CE
0.9
0.8
0.7
0.6
0.5
0.4
T = 25°C
A
V
@ I /I = 10
C B
BE(sat)
1.0
0.8
V
BE(on)
@ V = 10 V
CE
0.6
0.4
0.3
0.3
0.2
0.1
0
V
@ I /I = 10
C B
CE(sat)
0.2
0.2
0.5 1.0
2.0
5.0
10
20
50 100 200
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
20 30 50 70 100
I , COLLECTOR CURRENT (mAdc)
C
I , COLLECTOR CURRENT (mAdc)
C
Figure 1. Normalized DC Current Gain
Figure 5. “Saturation” and “On” Voltages
10
7.0
5.0
400
300
200
T = 25°C
A
C
ib
V
= 10 V
CE
100
80
T = 25°C
A
3.0
2.0
C
ob
60
40
30
20
1.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
40
I , COLLECTOR CURRENT (mAdc)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 6. Current–Gain — Bandwidth Product
Figure 7. Capacitances
170
160
150
V
CE
= 10 V
f = 1.0 kHz
T = 25°C
A
140
130
120
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I , COLLECTOR CURRENT (mAdc)
C
Figure 8. Base Spreading Resistance
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