BC239RLRA [ONSEMI]

100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN;


型号：	BC239RLRA
厂家：	ONSEMI
描述：	100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN 晶体放大器晶体管
文件：	总4页 (文件大小：87K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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by BC237/D

SEMICONDUCTOR TECHNICAL DATA

NPN Silicon

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

BC BC BC

237 238 239

Rating

Symbol

Unit

Vdc

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

Collector–Emitter Voltage

Emitter–Base Voltage

CEO

Vdc

CES

EBO

6.0

5.0

100

5.0

Vdc

Collector Current — Continuous

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

350

2.8

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.0

8.0

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

357

125

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I = 2.0 mA, I = 0)

BC237

BC238

BC239

—

(BR)CEO

Emitter–Base Breakdown Voltage

(I = 100 A, I = 0)

BC237

BC238

BC239

6.0

5.0

—

(BR)EBO

Collector Cutoff Current

CES

= 30 V, V

= 0)

BC238

BC239

—

0.2

= 50 V, V

= 30 V, V

= 0)

BC237

—

0.2

= 0) T = 125°C

BC238

BC239

—

0.2

4.0

µA

= 50 V, V

= 0) T = 125°C

BC237

—

0.2

4.0

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

DC Current Gain

—

(I = 10 µA, V

= 5.0 V)

BC237A

BC237B/238B

BC237C/238C/239C

—

150

270

—

(I = 2.0 mA, V

= 5.0 V)

BC237

BC239

BC237A

BC237B/238B

BC237C/238C/239C

120

200

380

—

170

290

500

800

220

460

800

(I = 100 mA, V

BC237A

BC237B/238B

BC237C/238C/239C

—

120

180

300

—

Collector–Emitter On Voltage

(I = 10 mA, I = 0.5 mA)

CE(sat)

BC237/BC238/BC239

BC237/BC239

BC238

—

0.07

0.2

0.6

0.8

(I = 100 mA, I = 5.0 mA)

Base–Emitter Saturation Voltage

(I = 10 mA, I = 0.5 mA)

BE(sat)

—

0.6

—

0.83

1.05

(I = 100 mA, I = 5.0 mA)

Base–Emitter On Voltage

BE(on)

(I = 100 µA, V

= 5.0 V)

—

0.55

—

0.5

0.62

0.83

—

0.7

—

(I = 2.0 mA, V

(I = 100 mA, V

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

MHz

(I = 0.5 mA, V

= 3.0 V, f = 100 MHz)

BC237

BC238

BC239

—

100

120

140

—

(I = 10 mA, V

= 5.0 V, f = 100 MHz)

BC237

BC238

BC239

150

200

240

280

—

Collector–Base Capacitance

(V = 10 V, I = 0, f = 1.0 MHz)

—

4.5

obo

Emitter–Base Capacitance

(V = 0.5 V, I = 0, f = 1.0 MHz)

—

8.0

—

ibo

Noise Figure

(I = 0.2 mA, V

= 5.0 V, R = 2.0 kΩ,

f = 1.0 kHz)

BC239

—

2.0

4.0

(I = 0.2 mA, V

f = 1.0 kHz, ∆f = 200 Hz)

= 5.0 V, R = 2.0 kΩ,

BC237

BC238

BC239

—

2.0

4.0

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2.0

1.5

1.0

0.9

= 10 V

= 25

= 25°C

0.8

0.7

0.6

0.5

0.4

@ I /I = 10

C B

BE(sat)

1.0

0.8

@ V

= 10 V

BE(on)

0.6

0.4

0.3

0.2

0.1

@ I /I = 10

C B

CE(sat)

0.2

0.5

1.0

2.0

5.0

100 200

0.1

0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.07.0 10

20 30 50 70 100

, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain

Figure 2. “Saturation” and “On” Voltages

7.0

5.0

400

300

200

= 25°C

= 10 V

100

= 25

°C

3.0

2.0

1.0

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

0.4 0.6 0.8 1.0

2.0

V , REVERSE VOLTAGE (VOLTS)

4.0 6.0 8.0 10

, COLLECTOR CURRENT (mAdc)

Figure 3. Current–Gain — Bandwidth Product

Figure 4. Capacitances

170

160

150

= 10 V

f = 1.0 kHz

= 25

140

130

120

°C

0.1

0.2 0.3

0.5

1.0

2.0

3.0

5.0

, COLLECTOR CURRENT (mAdc)

Figure 5. Base Spreading Resistance

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.

DIMENSION D AND J APPLY BETWEEN L AND K

MINIMUM. LEAD DIMENSION IS UNCONTROLLED

IN P AND BEYOND DIMENSION K MINIMUM.

SEATING

PLANE

INCHES

MIN

MILLIMETERS

DIM

MAX

0.205

0.210

0.165

0.022

0.019

0.055

0.105

0.020

–––

MIN

4.45

4.32

3.18

0.41

1.15

2.42

0.39

12.70

6.35

2.04

–––

MAX

5.20

5.33

4.19

0.55

0.48

1.39

2.66

0.50

–––

0.175

0.170

0.125

0.016

0.045

0.095

0.015

0.500

0.250

0.080

–––

X X

SECTION X–X

–––

0.105

0.100

–––

2.66

2.54

–––

0.115

0.135

2.93

3.43

–––

STYLE 17:

PIN 1. COLLECTOR

CASE 029–04

(TO–226AA)

ISSUE AD

2. BASE

3. EMITTER

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

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JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC237/D

◊

BC239RLRA [ONSEMI]

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