BC550BRLRM [ONSEMI]

100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN;
BC550BRLRM
型号: BC550BRLRM
厂家: ONSEMI    ONSEMI
描述:

100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN

晶体管
文件: 总4页 (文件大小:55K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BC549C, BC550C  
Low Noise Transistors  
NPN Silicon  
Features  
http://onsemi.com  
These are Pb−Free Devices*  
COLLECTOR  
1
MAXIMUM RATINGS  
2
Rating  
Symbol  
Value  
Unit  
BASE  
CollectorEmitter Voltage  
V
V
V
Vdc  
CEO  
CBO  
EBO  
BC549C  
BC550C  
30  
45  
3
EMITTER  
CollectorBase Voltage  
Vdc  
BC549C  
BC550C  
30  
50  
EmitterBase Voltage  
5.0  
Vdc  
Vdc  
Collector Current − Continuous  
I
C
100  
Total Device Dissipation @ T = 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
TO−92  
CASE 29  
Derate above = 25°C  
STYLE 17  
Total Device Dissipation @ T = 25°C  
P
D
1.5  
12  
W
mW/°C  
A
1
2
Derate above = 25°C  
3
STRAIGHT LEAD  
BULK PACK  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
MARKING DIAGRAM  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Ambient  
R
200  
°C/W  
q
JA  
JC  
Thermal Resistance, Junction−to−Case  
R
83.3  
°C/W  
q
BC5x  
yC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
AYWW G  
G
BC5xyC = Device Code  
x = 4 or 5  
y = 9 or 0  
A
Y
= Assembly Location  
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
BC549CG  
TO−92  
5000 Units / Bulk  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
BC550CG  
TO−92  
(Pb−Free)  
5000 Units / Bulk  
© Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
March, 2007 − Rev. 2  
BC550C/D  
BC549C, BC550C  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
V
V
V
Vdc  
Vdc  
Vdc  
(BR)CEO  
(BR)CBO  
(BR)EBO  
(I = 10 mAdc, I = 0)  
45  
50  
C
B
CollectorBase Breakdown Voltage  
(I = 10 mAdc, I = 0)  
C
E
EmitterBase Breakdown Voltage  
(I = 10 mAdc, I = 0)  
5.0  
E
C
Collector Cutoff Current  
I
CBO  
(V = 30 V, I = 0)  
15  
5.0  
nAdc  
mAdc  
CB  
E
(V = 30 V, I = 0, T = +125°C)  
CB  
E
A
Emitter Cutoff Current  
I
nAdc  
EBO  
(V = 4.0 Vdc, I = 0)  
EB  
15  
C
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
(I = 10 mAdc, V = 5.0 Vdc)  
100  
420  
270  
500  
800  
C
CE  
(I = 2.0 mAdc, V = 5.0 Vdc)  
C
CE  
CollectorEmitter Saturation Voltage  
(I = 10 mAdc, I = 0.5 mAdc)  
V
Vdc  
CE(sat)  
0.075  
0.3  
0.25  
0.25  
0.6  
0.6  
C
B
(I = 10 mAdc, I = see note 1)  
C
B
(I = 100 mAdc, I = 5.0 mAdc, see note 2)  
C
B
Base−Emitter Saturation Voltage  
(I = 100 mAdc, I = 5.0 mAdc)  
V
Vdc  
Vdc  
BE(sat)  
1.1  
C
B
Base−Emitter On Voltage  
(I = 10 mAdc, V = 5.0 Vdc)  
V
BE(on)  
0.55  
0.52  
0.55  
0.62  
0.7  
C
CE  
(I = 100 mAdc, V = 5.0 Vdc)  
C
CE  
(I = 2.0 mAdc, V = 5.0 Vdc)  
C
CE  
SMALL−SIGNAL CHARACTERISTICS  
CurrentGain — Bandwidth Product  
f
MHz  
pF  
T
(I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz)  
250  
2.5  
C
CE  
Collector−Base Capacitance  
(V = 10 Vdc, I = 0, f = 1.0 MHz)  
C
cbo  
CB  
E
Small−Signal Current Gain  
h
fe  
(I = 2.0 mAdc, V = 5.0 V, f = 1.0 kHz)  
450  
600  
900  
C
CE  
Noise Figure  
dB  
(I = 200 mAdc, V = 5.0 Vdc, R = 2.0 kW, f = 1.0 kHz)  
NF  
NF  
0.6  
2.5  
10  
C
CE  
S
1
2
(I = 200 mAdc, V = 5.0 Vdc, R = 100 kW, f = 1.0 kHz)  
C
CE  
S
1. I is value for which I = 11 mA at V = 1.0 V.  
B
C
CE  
2. Pulse test = 300 ms − Duty cycle = 2%.  
R
S
i
n
e
n
IDEAL  
TRANSISTOR  
Figure 1. Transistor Noise Model  
http://onsemi.com  
2
BC549C, BC550C  
2.0  
1.5  
1.0  
T = 25°C  
V
= 10 V  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
A
CE  
T = 25°C  
A
V
@ I /I = 10  
C B  
BE(sat)  
1.0  
0.8  
V
BE(on)  
@ V = 10 V  
CE  
0.6  
0.4  
0.3  
0.3  
0.2  
0.1  
0
V
@ I /I = 10  
C B  
CE(sat)  
0.2  
0.2  
0.5  
1.0 2.0  
5.0  
10  
20  
50  
100 200  
0.1 0.2  
0.5  
1.0 2.0  
5.0 10  
20  
50  
100  
I , COLLECTOR CURRENT (mAdc)  
C
I , COLLECTOR CURRENT (mAdc)  
C
Figure 2. Normalized DC Current Gain  
Figure 3. “Saturation” and “On” Voltages  
10  
7.0  
5.0  
400  
300  
200  
T = 25°C  
A
C
ib  
100  
80  
V
= 10 V  
CE  
T = 25°C  
3.0  
2.0  
A
60  
C
ob  
40  
30  
20  
1.0  
0.5 0.7 1.0  
2.0  
5.0 7.0 10  
20  
50  
0.4 0.6  
1.0  
2.0  
4.0  
10  
20  
40  
I , COLLECTOR CURRENT (mAdc)  
C
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 4. Current−Gain — Bandwidth Product  
Figure 5. Capacitance  
170  
160  
150  
V
= 10 V  
CE  
f = 1.0 kHz  
140  
130  
120  
T = 25°C  
A
0.1  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
I , COLLECTOR CURRENT (mAdc)  
C
Figure 6. Base Spreading Resistance  
http://onsemi.com  
3
BC549C, BC550C  
PACKAGE DIMENSIONS  
TO−92 (TO−226)  
CASE 29−11  
ISSUE AM  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. CONTOUR OF PACKAGE BEYOND DIMENSION R  
IS UNCONTROLLED.  
A
STRAIGHT LEAD  
BULK PACK  
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND  
BEYOND DIMENSION K MINIMUM.  
P
L
INCHES  
DIM MIN MAX  
MILLIMETERS  
SEATING  
PLANE  
K
MIN  
4.45  
4.32  
3.18  
0.407  
1.15  
2.42  
0.39  
12.70  
6.35  
2.04  
−−−  
MAX  
5.20  
5.33  
4.19  
0.533  
1.39  
2.66  
0.50  
−−−  
A
B
C
D
G
H
J
0.175  
0.170  
0.125  
0.016  
0.045  
0.095  
0.015  
0.500  
0.250  
0.080  
−−−  
0.205  
0.210  
0.165  
0.021  
0.055  
0.105  
0.020  
−−−  
D
X X  
G
J
H
V
K
L
−−−  
−−−  
N
P
R
V
0.105  
0.100  
−−−  
2.66  
2.54  
−−−  
C
SECTION X−X  
0.115  
0.135  
2.93  
3.43  
1
N
−−−  
−−−  
N
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. CONTOUR OF PACKAGE BEYOND  
DIMENSION R IS UNCONTROLLED.  
A
BENT LEAD  
TAPE & REEL  
AMMO PACK  
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P  
AND BEYOND DIMENSION K MINIMUM.  
P
T
SEATING  
PLANE  
MILLIMETERS  
K
DIM MIN  
MAX  
5.20  
5.33  
4.19  
0.54  
2.80  
0.50  
−−−  
A
B
C
D
G
J
4.45  
4.32  
3.18  
0.40  
2.40  
0.39  
12.70  
2.04  
1.50  
2.93  
3.43  
D
X X  
G
K
N
P
R
V
J
2.66  
4.00  
−−−  
V
C
−−−  
SECTION X−X  
1
N
STYLE 17:  
PIN 1. COLLECTOR  
2. BASE  
3. EMITTER  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
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BC550C/D  

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