BC640-16G [ONSEMI]

High Current Transistors; 高电流晶体管


型号：	BC640-16G
厂家：	ONSEMI
描述：	High Current Transistors 高电流晶体管晶体晶体管
文件：	总4页 (文件大小：61K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BC640, BC640−16

High Current Transistors

PNP Silicon

Features

• Pb−Free Packages are Available*

http://onsemi.com

COLLECTOR

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Symbol

Value

−80

Unit

Vdc

Adc

BASE

CEO

CBO

EBO

−80

EMITTER

−5.0

−0.5

Collector Current − Continuous

Total Device Dissipation @ T = 25°C

625

5.0

mW/°C

Derate above 25°C

Total Device Dissipation @ T = 25°C

1.5

mW/°C

TO−92

CASE 29

STYLE 14

Derate above 25°C

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

STRAIGHT LEAD

BULK PACK

BENT LEAD

TAPE & REEL

AMMO PACK

Thermal Resistance, Junction−to−Ambient

Thermal Resistance, Junction−to−Case

83.3

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

MARKING DIAGRAMS

640

BC64

0−16

AYWW G

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

March, 2007 − Rev. 0

BC640/D

BC640, BC640−16

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage

Vdc

(BR)CEO

(BR)CBO

(BR)EBO

(I = −10 mAdc, I = 0)

−80

−

Collector − Base Breakdown Voltage

(I = −100 mAdc, I = 0)

−80

−

Emitter − Base Breakdown Voltage

(I = −10 mAdc, I = 0)

−5.0

Collector Cutoff Current

(V = −30 Vdc, I = 0)

CBO

−

−100

−10

nAdc

mAdc

(V = −30 Vdc, I = 0, T = 125°C)

ON CHARACTERISTICS (Note 1)

DC Current Gain

−

(I = −5.0 mAdc, V = −2.0 Vdc)

100

−

(I = −150 mAdc, V = −2.0 Vdc)

BC640

BC640−16

160

250

−

(I = −500 mA, V = −2.0 V)

Collector − Emitter Saturation Voltage

(I = −500 mAdc, I = −50 mAdc)

−

−0.25

−0.5

−

Vdc

CE(sat)

Base − Emitter On Voltage

(I = −500 mAdc, V = −2.0 Vdc)

BE(on)

−

−1.0

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product

MHz

(I = −50 mAdc, V = −2.0 Vdc, f = 100 MHz)

−

150

9.0

−

Output Capacitance

(V = −10 Vdc, I = 0, f = 1.0 MHz)

Input Capacitance

(V = −0.5 Vdc, I = 0, f = 1.0 MHz)

110

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2.0%.

ORDERING INFORMATION

Device

Package

Shipping

BC640G

TO−92

(Pb−Free)

5000 Units / Bulk

BC640ZL1G

TO−92

(Pb−Free)

2000 Units / Ammo Box

BC640−16

TO−92

5000 Units / Bulk

BC640−16G

TO−92

(Pb−Free)

http://onsemi.com

BC640, BC640−16

500

−1000

−500

= −2 V

SOA = 1S

−B

−200

−100

T 25°C

200

100

−A

−L

−50

T 25°C

−20

−10

−5

BC636

BC638

BC640

T 25°C

−2

−1

−2 −3 −4 −5 −7 −10

−20 −30−40 −50 −70 −100

−1

−3 −5 −10

−30 −50 −100

−300 −500 −1000

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

I , COLLECTOR CURRENT (mA)

Figure 1. Active Region Safe Operating Area

Figure 2. DC Current Gain

500

300

−1

−0.8

−0.6

@ I /I = 10

C B

BE(sat)

BE(on)

@ V = −2 V

= −2 V

100

−0.4

−0.2

@ I /I = 10

C B

CE(sat)

−1

−10

−100

−1000

−1

−10

−100

−1000

I , COLLECTOR CURRENT (mA)

Figure 3. Current Gain Bandwidth Product

Figure 4. “Saturation” and “On” Voltages

−0.2

−1.0

= −2 VOLTS

DT = 0°C to +100°C

−1.6

−2.2

for V

−1

−3 −5 −10

−30 −50 −100

−300 −500 −1000

I , COLLECTOR CURRENT (mA)

Figure 5. Temperature Coefficients

http://onsemi.com

BC640, BC640−16

PACKAGE DIMENSIONS

TO−92 (TO−226)

CASE 29−11

ISSUE AM

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

STRAIGHT LEAD

BULK PACK

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

INCHES

DIM MIN MAX

MILLIMETERS

SEATING

PLANE

MIN

4.45

4.32

3.18

0.407

1.15

2.42

0.39

12.70

6.35

2.04

−−−

MAX

5.20

5.33

4.19

0.533

1.39

2.66

0.50

−−−

0.175

0.170

0.125

0.016

0.045

0.095

0.015

0.500

0.250

0.080

−−−

0.205

0.210

0.165

0.021

0.055

0.105

0.020

−−−

X X

−−−

0.105

0.100

−−−

2.66

2.54

−−−

SECTION X−X

0.115

0.135

2.93

3.43

−−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. CONTOUR OF PACKAGE BEYOND

DIMENSION R IS UNCONTROLLED.

BENT LEAD

TAPE & REEL

AMMO PACK

4. LEAD DIMENSION IS UNCONTROLLED IN P

AND BEYOND DIMENSION K MINIMUM.

SEATING

PLANE

MILLIMETERS

DIM MIN

MAX

5.20

5.33

4.19

0.54

2.80

0.50

−−−

4.45

4.32

3.18

0.40

2.40

0.39

12.70

2.04

1.50

2.93

3.43

X X

2.66

4.00

−−−

SECTION X−X

STYLE 14:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5773−3850

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

BC640/D

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