BC807-25WT1G [ONSEMI]
General Purpose Transistors;
| 型号： | BC807-25WT1G |
| 厂家： | 
ONSEMI |
| 描述： | General Purpose Transistors 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC807-25W, BC807-40W
General Purpose
Transistors
PNP Silicon
http://onsemi.com
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
COLLECTOR
3
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
1
BASE
Compliant
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
−45
Unit
V
Collector − Emitter Voltage
Collector − Base Voltage
V
CEO
V
CBO
V
EBO
3
−50
V
Emitter − Base Voltage
−5.0
−500
V
1
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
I
C
mAdc
2
SC−70
CASE 419
STYLE 3
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
P
D
(Note 1) T = 25°C
460
272
mW
A
Thermal Resistance,
Junction−to−Ambient
R
°C/W
q
JA
MARKING DIAGRAM
Junction and Storage Temperature
T , T
−55 to +150
°C
J
stg
5x M G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
G
1
2
1. FR−4 Board, 1 oz. Cu, 100 mm .
5x = Device Code
x = B or C
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2014 − Rev. 4
BC807−25W/D
BC807−25W, BC807−40W
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I = −10 mA)
C
V
−45
−50
−5.0
−
−
−
−
−
−
V
V
V
(BR)CEO
Collector−Emitter Breakdown Voltage
V
(BR)CES
(BR)EBO
(V = 0, I = −10 mA)
EB
C
Emitter−Base Breakdown Voltage
V
(I = −1.0 mA)
E
Collector Cutoff Current
I
CBO
(V = −20 V)
(V = −20 V, T = 150°C)
CB
−
−
−
−
−100
−5.0
nA
mA
CB
J
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = −100 mA, V = −1.0 V)
BC807−25, SBC807−25
BC807−40, SBC807−40
160
250
40
−
−
−
400
600
−
C
CE
(I = −500 mA, V = −1.0 V)
C
CE
Collector−Emitter Saturation Voltage
(I = −500 mA, I = −50 mA)
V
−
−
−0.7
V
V
CE(sat)
C
B
Base−Emitter On Voltage
(I = −500 mA, V = −1.0 V)
V
BE(on)
−
−
−1.2
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
100
−
−
−
−
MHz
pF
T
(I = −10 mA, V = −5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance
(V = −10 V, f = 1.0 MHz)
C
10
obo
CB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
†
Device
BC807−25WT1G
Specific Marking
Package
Shipping
3000 / Tape & Reel
10,000 / Tape & Reel
SC−70
(Pb−Free)
SBC807−25T1G*
BC807−25WT3G
BC807−40WT1G
SBC807−40WT1G*
BC807−40WT3G
5B
3000 / Tape & Reel
10,000 / Tape & Reel
SC−70
(Pb−Free)
5C
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
http://onsemi.com
2
BC807−25W, BC807−40W
TYPICAL CHARACTERISTICS − BC807−25W, SBC807−25W
500
400
300
200
1
150°C
I /I = 10
C
B
V
CE
= 1 V
150°C
25°C
25°C
−55°C
0.1
−55°C
100
0
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
V
CE
= 5 V
−55°C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 10
C
B
25°C
−55°C
25°C
0.8
0.7
0.6
0.5
0.4
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
1000
V
CE
= 1 V
T = 25°C
A
100
10
0.1
1
10
100
1000
I , COLLECTOR CURRENT (A)
C
Figure 5. Current Gain Bandwidth Product vs.
Collector Current
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3
BC807−25W, BC807−40W
TYPICAL CHARACTERISTICS − BC807−25W, SBC807−25W
-1.0
T = 25°C
J
-0.8
I
=
-500 mA
C
-0.6
-0.4
I
C
= -300 mA
-0.2
0
I
C
= -100 mA
I
C
= -10 mA
-0.01
-0.1
-1.0
I , BASE CURRENT (mA)
-10
-100
B
Figure 6. Saturation Region
100
+1.0
0
q
for V
CE(sat)
VC
C
ib
10
-1.0
-2.0
C
ob
q
for V
BE
VB
1.0
-0.1
-1.0
-10
-100
-1000
-1.0
-10
-100
I , COLLECTOR CURRENT
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 7. Temperature Coefficients
Figure 8. Capacitances
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4
BC807−25W, BC807−40W
TYPICAL CHARACTERISTICS − BC807−40W, SBC807−40W
1000
900
800
700
600
500
400
300
1
I /I = 10
C
B
V
CE
= 1 V
150°C
150°C
25°C
−55°C
0.1
25°C
−55°C
200
100
0
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 9. DC Current Gain vs. Collector
Current
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
V
CE
= 5 V
−55°C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 10
C
B
25°C
−55°C
25°C
0.8
0.7
0.6
0.5
0.4
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current
Figure 12. Base Emitter Voltage vs. Collector
Current
1000
V
CE
= 1 V
T = 25°C
A
100
10
0.1
1
10
100
1000
I , COLLECTOR CURRENT (A)
C
Figure 13. Current Gain Bandwidth Product
vs. Collector Current
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5
BC807−25W, BC807−40W
TYPICAL CHARACTERISTICS − BC807−40W, SBC807−40W
-1.0
T = 25°C
J
-0.8
I
=
-500 mA
C
-0.6
-0.4
I
C
= -300 mA
-0.2
0
I
C
= -100 mA
I
C
= -10 mA
-0.01
-0.1
-1.0
I , BASE CURRENT (mA)
-10
-100
B
Figure 14. Saturation Region
100
+1.0
0
q
for V
CE(sat)
VC
C
ib
10
-1.0
-2.0
C
ob
q
for V
BE
VB
1.0
-0.1
-1.0
-10
-100
-1000
-1.0
-10
-100
I , COLLECTOR CURRENT
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 15. Temperature Coefficients
Figure 16. Capacitances
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6
BC807−25W, BC807−40W
TYPICAL CHARACTERISTICS − BC807−25W, SBC807−25W, BC807−40W, SBC807−40W
1
1 mS
1 S
100 mS
0.1
10 mS
Thermal Limit
0.01
0.001
0.1
1
10
100
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
1000
D = 0.5
0.2
100
10
1
0.1
0.05
0.02
0.01
Single Pulse
0.00001 0.0001
0.000001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (s)
Figure 18. Thermal Response
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7
BC807−25W, BC807−40W
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
MILLIMETERS
INCHES
DIM
A
A1
A2
b
c
D
E
e
MIN
0.80
0.00
NOM
0.90
0.05
0.70 REF
0.35
0.18
2.10
1.24
1.30
0.65 BSC
MAX
1.00
0.10
MIN
0.032
0.000
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
MAX
0.040
0.004
3
E
H
E
1
2
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
e1
L
0.38
2.10
0.015
0.083
0.20
2.00
0.56
2.40
0.008
0.079
0.022
0.095
H
E
STYLE 3:
c
A
A2
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
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or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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For additional information, please contact your local
Sales Representative
BC807−25W/D
相关型号：
BC807-40
PNP Silicon AF Transistors (For general AF applications High collector current High current gain)
INFINEON
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