BC847BMTF [ONSEMI]

NPN Epitaxial Silicon Transistor;
BC847BMTF
型号: BC847BMTF
厂家: ONSEMI    ONSEMI
描述:

NPN Epitaxial Silicon Transistor

开关 光电二极管 晶体管
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BC846 / BC847 / BC848 / BC850  
NPN Epitaxial Silicon Transistor  
Features  
• Switching and Amplifier Applications  
3
• Suitable for Automatic Insertion in Thick and Thin-film Circuits  
• Low Noise: BC850  
2
• Complement to BC856, BC857, BC858, BC859, and BC860  
SOT-23  
1
1. Base 2. Emitter 3. Collector  
Ordering Information(1)  
Part Number  
BC846AMTF  
BC846BMTF  
BC846CMTF  
BC847AMTF  
BC847BMTF  
BC847CMTF  
BC848BMTF  
BC848CMTF  
BC850AMTF  
BC850CMTF  
Marking  
8AA  
Package  
SOT-23 3L  
SOT-23 3L  
SOT-23 3L  
SOT-23 3L  
SOT-23 3L  
SOT-23 3L  
SOT-23 3L  
SOT-23 3L  
SOT-23 3L  
SOT-23 3L  
Packing Method  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
8AB  
8AC  
8BA  
8BB  
8BC  
8CB  
8CC  
8EA  
8EC  
Note:  
1. Affix “-A,-B,-C” means hFE classification. Affix “-M” means SOT-23 package. Affix “-TF” means the tape and reel type  
packing.  
Publication Order Number:  
BC846/D  
© 2002 Semiconductor Components Industries, LLC.  
September-2017, Rev. 2  
1
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.  
Symbol  
Parameter  
Value  
Unit  
BC846  
80  
VCBO  
Collector-Base Voltage  
BC847 / BC850  
BC848  
50  
V
30  
BC846  
65  
VCEO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
BC847 / BC850  
BC848  
45  
V
V
30  
BC846 / BC847  
BC848 / BC850  
6
VEBO  
5
100  
IC  
TJ  
Collector Current (DC)  
Junction Temperature  
mA  
°C  
150  
TSTG  
Storage Temperature Range  
-65 to +150  
°C  
Thermal Characteristics(2)  
Values are at TA = 25°C unless otherwise noted.  
Symbol  
PD  
Parameter  
Value  
310  
Unit  
mW  
Power Dissipation  
Derate Above 25°C  
2.48  
403  
mW/°C  
°C/W  
RθJA  
Thermal Resistance, Junction-to-Ambient  
Note:  
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.  
www.onsemi.com  
2
Electrical Characteristics(3)  
Values are at TA = 25°C unless otherwise noted.  
Symbol  
ICBO  
Parameter  
Collector Cut-Off Current  
DC Current Gain  
Conditions  
VCB = 30 V, IE = 0  
Min.  
Typ.  
Max.  
15  
Unit  
nA  
hFE  
VCE = 5 V, IC = 2 mA  
IC = 10 mA, IB = 0.5 mA  
IC = 100 mA, IB = 5 mA  
IC = 10 mA, IB = 0.5 mA  
IC = 100 mA, IB = 5 mA  
VCE = 5 V, IC = 2 mA  
110  
800  
250  
600  
90  
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
mV  
mV  
200  
700  
900  
660  
VBE(sat) Collector-Base Saturation Voltage  
580  
700  
720  
VBE(on) Base-Emitter On Voltage  
mV  
VCE = 5 V, IC = 10 mA  
VCE = 5 V, IC = 10 mA,  
f = 100 MHz  
fT  
Current Gain Bandwidth Product  
300  
MHz  
Cob  
Cib  
Output Capacitance  
Input Capacitance  
VCB = 10 V, IE = 0, f = 1 MHz  
VEB = 0.5 V, IC = 0, f = 1 MHz  
3.5  
9
6.0  
pF  
pF  
BC846 / BC847 / BC848  
2.0  
1.2  
10.0  
4.0  
V
CE = 5 V, IC = 200 μA,  
RG = 2 kΩ, f = 1 kHz  
Noise  
Figure  
BC850  
NF  
dB  
V
CE = 5 V, IC = 200 μA,  
BC850  
1.4  
3.0  
RG = 2 kΩ, f = 30 to 15000 Hz  
Note:  
3. Pulse test: pulse width 300 μs, duty cycle 2%  
hFE Classification  
Classification  
A
B
C
hFE  
110 ~ 220  
200 ~ 450  
420 ~ 800  
www.onsemi.com  
3
Typical Performance Characteristics  
1000  
100  
10  
100  
VCE = 5V  
TA = 150 o  
C
IB = 400μA  
IB = 350μA  
80  
IB = 300μA  
TA = 25 o  
C
IB = 250μA  
60  
IB = 200μA  
TA = -55 o  
C
IB = 150μA  
40  
IB = 100μA  
20  
IB = 50μA  
0
0.1  
1
10  
100  
1000  
0
4
8
12  
16  
20  
IC [mA], COLLECTOR CURRENT  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 1. Static Characteristic  
Figure 2. DC Current Gain  
1
10  
IC = 10IB  
IC = 20IB  
1
0.1  
TA = 150oC  
TA = 25oC  
0.1  
TA = 150oC  
A = -55oC  
TA = 25oC  
T
TA = -55oC  
0.01  
0.1  
0.01  
0.1  
1
10  
100  
1000  
1
10  
100  
1000  
IC [mA], COLLECTOR CURRENT  
IC [mA], COLLECTOR CURRENT  
Figure 3. Collector-Emitter Saturation Voltage  
Figure 4. Collector-Emitter Saturation Voltage  
1.2  
1.2  
IC = 10IB  
IC = 20IB  
1.0  
0.8  
1.0  
0.8  
A = -55oC  
T
A = -55oC  
T
TA = 25oC  
TA = 25oC  
0.6  
0.4  
0.2  
0.6  
0.4  
0.2  
TA = 150oC  
TA = 150oC  
0.1  
1
10  
100  
1000  
0.1  
1
10  
100  
1000  
IC [mA], COLLECTOR CURRENT  
IC [mA], COLLECTOR CURRENT  
Figure 5. Base-Emitter Saturation Voltage  
Figure 6. Base-Emitter Saturation Voltage  
www.onsemi.com  
4
Typical Performance Characteristics (Continued)  
100  
10  
1
VCE = 5V  
100  
10  
1
f=1MHz  
TA = 150oC  
TA = 25oC  
TA = -55oC  
0.1  
0.0  
0.1  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1
10  
100  
1000  
VBE(ON) [V], BASE-EMITTER ON VOLTAGE  
VCB[V], COLLECTOR-BASE VOLTAGE  
Figure 7. Base-Emitter On Voltage  
Figure 8. Collector Output Capacitance  
1000  
100  
10  
VCE=5V  
1
0.1  
1
10  
100  
IC[mA], COLLECTOR CURRENT  
Figure 9. Current Gain Bandwidth Product  
www.onsemi.com  
5
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
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USA/Canada  
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