BCH807-16L [ONSEMI]
General Purpose Transistors;
| 型号： | BCH807-16L |
| 厂家： | 
ONSEMI |
| 描述： | General Purpose Transistors |
| 文件： | 总11页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
General Purpose
Transistors
PNP Silicon
BCH807-16L/25L/40L,
NSVBCH807-16L/25L/40L
www.onsemi.com
Features
• 175°C T
− Rated for High Temperature, Mission Critical
J(max)
Applications
COLLECTOR
3
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
1
BASE
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
−45
Unit
V
3
Collector − Emitter Voltage
Collector − Base Voltage
V
CEO
V
CBO
V
EBO
−50
V
1
2
Emitter − Base Voltage
−5.0
−500
−800
V
SOT−23
CASE 318
STYLE 6
Collector Current − Continuous
Collector Current − Peak
I
C
mAdc
mA
I
CM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
MARKING DIAGRAM
Total Device Dissipation FR−5 Board,
P
D
(Note 1) T = 25°C
Derate above 25°C
225
1.3
mW
mW/°C
A
XXX M G
Thermal Resistance,
Junction−to−Ambient (Note 1)
R
400
°C/W
q
JA
G
1
Total Device Dissipation Alumina
P
D
Substrate, (Note 1) T = 25°C
Derate above 25°C
300
1.8
mW
mW/°C
A
XXX = Device Code
M
= Date Code*
G
= Pb−Free Package
Thermal Resistance,
Junction−to−Ambient (Note 2)
R
330
°C/W
q
JA
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Junction and Storage Temperature
T , T
−55 to +175
°C
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. FR−4 Board, 1 oz. Cu, 100mm .
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
February, 2020 − Rev. 0
BCH807−16LT1/D
BCH807−16L/25L/40L, NSVBCH807−16L/25L/40L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I = −10 mA)
C
V
−45
−50
−5.0
−
−
−
−
−
−
V
V
V
(BR)CEO
Collector−Emitter Breakdown Voltage
V
(BR)CES
(V = 0, I = −10 mA)
EB
C
Emitter−Base Breakdown Voltage
V
(BR)EBO
(I = −1.0 mA)
E
Collector Cutoff Current
I
CBO
(V = −20 V)
(V = −20 V, T = 150°C)
CB
−
−
−
−
−100
−5.0
nA
mA
CB
J
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = −100 mA, V = −1.0 V)
BCH807−16/NSVBCH807−16L*
BCH807−25/NSVBCH807−25L
BCH807−40/NSVBCH807−40L
100
160
250
40
−
−
−
−
250
400
600
−
C
CE
(I = −500 mA, V = −1.0 V)
C
CE
Collector−Emitter Saturation Voltage
(I = −500 mA, I = −50 mA)
V
−
−
−0.7
V
V
CE(sat)
C
B
Base−Emitter On Voltage
(I = −500 mA, V = −1.0 V)
V
BE(on)
−
−
−1.2
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
100
−
−
−
MHz
pF
T
(I = −10 mA, V = −5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance
(V = −10 V, f = 1.0 MHz)
C
−
10
obo
CB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
†
Device
BCH807−16LT1G**
Specific Marking
Package
Shipping
XXX
3000 / Tape & Reel
NSVBCH807−16LT1G*, **
BCH807−25LT1G**
SOT−23
(Pb−Free)
5AG
5E
3000 / Tape & Reel
3000 / Tape & Reel
NSVBCH807−25LT1G*
BCH807−40LT1G**
NSVBCH807−40LT1G*
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
**Device release available upon request − Please contact ON Semiconductor sales.
www.onsemi.com
2
BCH807−16L/25L/40L, NSVBCH807−16L/25L/40L
TYPICAL CHARACTERISTICS − BCH807−16L
500
400
300
200
1
I /I = 10
C
B
V
CE
= 1 V
150°C
150°C
25°C
−55°C
25°C
0.1
−55°C
100
0
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
V
CE
= 5 V
−55°C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 10
C
B
25°C
−55°C
25°C
0.8
0.7
0.6
0.5
0.4
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
www.onsemi.com
3
BCH807−16L/25L/40L, NSVBCH807−16L/25L/40L
TYPICAL CHARACTERISTICS − BCH807−16L
-1.0
T = 25°C
J
-0.8
I
=
-500 mA
C
-0.6
-0.4
I
C
= -300 mA
-0.2
0
I
C
= -100 mA
I
C
= -10 mA
-0.01
-0.1
-1.0
I , BASE CURRENT (mA)
-10
-100
B
Figure 5. Saturation Region
100
+1.0
0
q
for V
CE(sat)
VC
C
ib
10
-1.0
-2.0
C
ob
q
for V
BE
VB
1.0
-0.1
-1.0
-10
-100
-1000
-1.0
-10
-100
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 6. Temperature Coefficients
Figure 7. Capacitances
www.onsemi.com
4
BCH807−16L/25L/40L, NSVBCH807−16L/25L/40L
TYPICAL CHARACTERISTICS − BCH807−25L
500
400
300
200
1
150°C
I /I = 10
C
B
V
CE
= 1 V
150°C
25°C
25°C
−55°C
0.1
−55°C
100
0
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 8. DC Current Gain vs. Collector
Current
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
V
CE
= 5 V
−55°C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 10
C
B
25°C
−55°C
25°C
0.8
0.7
0.6
0.5
0.4
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
Figure 11. Base Emitter Voltage vs. Collector
Current
1000
V
CE
= 1 V
T = 25°C
A
100
10
0.1
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
Figure 12. Current Gain Bandwidth Product
vs. Collector Current
www.onsemi.com
5
BCH807−16L/25L/40L, NSVBCH807−16L/25L/40L
TYPICAL CHARACTERISTICS − BCH807−25L
-1.0
T = 25°C
J
-0.8
I
=
-500 mA
C
-0.6
-0.4
I
C
= -300 mA
-0.2
0
I
C
= -100 mA
I
C
= -10 mA
-0.01
-0.1
-1.0
I , BASE CURRENT (mA)
-10
-100
B
Figure 13. Saturation Region
100
+1.0
0
q
for V
CE(sat)
VC
C
ib
10
-1.0
-2.0
C
ob
q
for V
BE
VB
1.0
-0.1
-1.0
-10
-100
-1000
-1.0
-10
-100
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 14. Temperature Coefficients
Figure 15. Capacitances
www.onsemi.com
6
BCH807−16L/25L/40L, NSVBCH807−16L/25L/40L
TYPICAL CHARACTERISTICS − BCH807−40L
1000
900
800
700
600
500
400
300
1
I /I = 10
C
B
V
CE
= 1 V
150°C
150°C
25°C
−55°C
0.1
25°C
−55°C
200
100
0
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 16. DC Current Gain vs. Collector
Current
Figure 17. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
V
CE
= 5 V
−55°C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 10
C
B
25°C
−55°C
25°C
0.8
0.7
0.6
0.5
0.4
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 18. Base Emitter Saturation Voltage vs.
Collector Current
Figure 19. Base Emitter Voltage vs. Collector
Current
1000
V
CE
= 1 V
T = 25°C
A
100
10
0.1
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
Figure 20. Current Gain Bandwidth Product
vs. Collector Current
www.onsemi.com
7
BCH807−16L/25L/40L, NSVBCH807−16L/25L/40L
TYPICAL CHARACTERISTICS − BCH807−40L
-1.0
T = 25°C
J
-0.8
I
=
-500 mA
C
-0.6
-0.4
I
C
= -300 mA
-0.2
0
I
C
= -100 mA
I
C
= -10 mA
-0.01
-0.1
-1.0
I , BASE CURRENT (mA)
-10
-100
B
Figure 21. Saturation Region
100
+1.0
0
q
for V
CE(sat)
VC
C
ib
10
-1.0
-2.0
C
ob
q
for V
BE
VB
1.0
-0.1
-1.0
-10
-100
-1000
-1.0
-10
-100
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 22. Temperature Coefficients
Figure 23. Capacitances
www.onsemi.com
8
BCH807−16L/25L/40L, NSVBCH807−16L/25L/40L
TYPICAL CHARACTERISTICS − BCH807−16L, BCH807−25L, BCH807−40L
1
1 mS
1 S
100 mS
0.1
10 mS
Thermal Limit
0.01
0.001
0.1
1
10
100
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 24. Safe Operating Area
www.onsemi.com
9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1. EMITTER
2. BASE
STYLE 8:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1. SOURCE
2. DRAIN
STYLE 14:
PIN 1. CATHODE
2. GATE
PIN 1. DRAIN
2. SOURCE
3. GATE
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE−ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. GATE
2. CATHODE
3. ANODE
PIN 1. ANODE
2. CATHODE
3. CATHODE
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE−ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1. ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1. GATE
2. SOURCE
3. DRAIN
PIN 1. RETURN
2. OUTPUT
3. INPUT
PIN 1. GATE
2. DRAIN
PIN 1. ANODE
2. CATHODE
3. GATE
PIN 1. CATHODE
2. ANODE
3. SOURCE
3. NO CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
PIN 1. ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
ON Semiconductor Website: www.onsemi.com
◊
www.onsemi.com
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明