BCP56-16T3G [ONSEMI]
NPN Silicon Epitaxial Transistor; NPN硅外延型晶体管
| 型号： | BCP56-16T3G |
| 厂家： | 
ONSEMI |
| 描述： | NPN Silicon Epitaxial Transistor |
| 文件： | 总5页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCP56 Series,
SBCP56 Series
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT−223
package, which is designed for medium power surface mount
applications.
http://onsemi.com
MEDIUM POWER NPN SILICON
HIGH CURRENT TRANSISTOR
SURFACE MOUNT
Features
• High Current: 1.0 A
• The SOT−223 package can be soldered using wave or reflow. The
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
COLLECTOR 2,4
• Available in 12 mm Tape and Reel
Use BCP56T1 to Order the 7 inch/1000 Unit Reel
Use BCP56T3 to Order the 13 inch/4000 Unit Reel
• PNP Complement is BCP53T1
BASE
1
EMITTER 3
4
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
2
3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Symbol
Value
80
Unit
Vdc
Vdc
Vdc
Adc
SOT−223
CASE 318E
STYLE 1
V
CEO
V
CBO
V
EBO
100
5
MARKING DIAGRAM
I
C
1
Total Power Dissipation
P
D
@ T = 25°C (Note 1)
Derate above 25°C
1.5
12
W
mW/°C
A
AYW
xxxxxG
G
Operating and Storage
Temperature Range
T , T
−65 to 150
°C
J
stg
1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
xx
A
Y
W
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Thermal Resistance,
Junction−to−Ambient
(surface mounted)
R
83.3
°C/W
q
JA
Maximum Temperature for
Soldering Purposes
Time in Solder Bath
T
L
(Note: Microdot may be in either location)
260
10
°C
Sec
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1. Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x
1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
November, 2011 − Rev. 8
BCP56T1/D
BCP56 Series, SBCP56 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage
V
100
80
5.0
−
−
−
−
−
−
−
−
Vdc
Vdc
(BR)CBO
(BR)CEO
(BR)EBO
(I = 100 mAdc, I = 0)
C
E
Collector−Emitter Breakdown Voltage
(I = 1.0 mAdc, I = 0)
V
V
C
B
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
−
Vdc
E
C
Collector−Base Cutoff Current
(V = 30 Vdc, I = 0)
I
100
10
nAdc
mAdc
CBO
CB
E
Emitter−Base Cutoff Current
(V = 5.0 Vdc, I = 0)
I
−
EBO
EB
C
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
−
(I = 5.0 mA, V = 2.0 V) All Part Types
25
40
63
100
25
−
−
−
−
−
−
C
CE
(I = 150 mA, V = 2.0 V)BCP56T1, SBCP56T1, SBCP56T3
250
160
250
−
C
CE
BCP56−10T1, SBCP56−10T1
BCP56−16T1, SBCP56−16T1, SBCP56−16T3
(I = 500 mA, V = 2.0 V)All Types
C
CE
Collector−Emitter Saturation Voltage
(I = 500 mAdc, I = 50 mAdc)
V
−
−
0.5
Vdc
Vdc
CE(sat)
C
B
Base−Emitter On Voltage
(I = 500 mAdc, V = 2.0 Vdc)
V
BE(on)
−
−
1.0
C
CE
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
f
T
−
130
−
MHz
(I = 10 mAdc, V = 5.0 Vdc, f = 35 MHz)
C
CE
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
ORDERING INFORMATION
†
Device
Marking
Package
Shipping
BCP56T1G
BH
SOT−223
(Pb−Free)
1000 / Tape & Reel
4000 / Tape & Reel
1000 / Tape & Reel
1000 / Tape & Reel
4000 / Tape & Reel
SBCP56T1G
BCP56T3G
BH
SOT−223
(Pb−Free)
SBCP56T3G
BCP56−10T1G
BH−10
BH−16
BH−16
SOT−223
(Pb−Free)
SBCP56−10T1G
BCP56−16T1G
SBCP56−16T1G
BCP56−16T3G
SBCP56−16T3G
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
BCP56 Series, SBCP56 Series
TYPICAL ELECTRICAL CHARACTERISTICS
1000
T = 125°C
J
T = 25°C
J
100
T = -55°C
J
10
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
1000
100
10
80
60
T = 25°C
J
40
20
C
ibo
10
8.0
6.0
C
obo
4.0
0.1
1.0
10
100
1000
0.2
0.5 1.0 2.0
5.0 10
20
50 100
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 2. Current−Gain − Bandwidth Product
Figure 3. Capacitance
1
1.2
I /I = 10
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 10
C
B
C
B
150°C
25°C
−55°C
25°C
−55°C
0.1
150°C
0.3
0.2
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 4. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
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3
BCP56 Series, SBCP56 Series
TYPICAL ELECTRICAL CHARACTERISTICS
1.0
0.8
1.2
1.1
1.0
0.9
T = 25°C
V
= 2 V
J
CE
−55°C
25°C
50
I = 10ꢁmA
C
100ꢁmA
250ꢁmA
500ꢁmA
0.6
0.4
0.8
0.7
0.6
0.5
0.4
mA
150°C
0.2
0
0.3
0.2
0.05 0.1 0.2
0.5
1.0 2.0
5.0
10
20
50
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (A)
C
Figure 6. Base Emitter Voltage vs. Collector
Current
Figure 7. Collector Saturation Region
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1
1 mS
1 S
100 mS
10 mS
0.1
0.01
0.1
1
10
100
0
20
40
60
80
100
120
140
160
T , AMBIENT TEMPERATURE (°C)
A
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 8. Safe Operating Area
Figure 9. Power Derating Curve
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4
BCP56 Series, SBCP56 Series
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
4
2
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
NOM
1.63
0.06
0.75
3.06
0.29
6.50
3.50
2.30
0.94
−−−
1.75
7.00
−
MAX
1.75
0.10
0.89
3.20
0.35
6.70
3.70
2.40
1.05
−−−
2.00
7.30
10°
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
H
E
E
1
3
b
e1
e
0.069
0.276
−
0.078
0.287
10°
C
q
H
E
A
q
0.08 (0003)
STYLE 1:
A1
PIN 1. BASE
2. COLLECTOR
3. EMITTER
L
L1
4. COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
mm
inches
1.5
0.059
ǒ
Ǔ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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BCP56T1/D
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