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BCP56-C [SECOS]

NPN Silicon Medium Power Transistor;
BCP56-C
型号： BCP56-C
厂家： SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述：

NPN Silicon Medium Power Transistor
文件： 总2页 (文件大小：326K)
中文：  中文翻译
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BCP56-C  
1A , 100V  
NPN Silicon Medium Power Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
FEATURES  
SOT-223  
ꢀ
ꢀ
ꢀ
ꢀ
For AF Driver and Output Stages  
High Collector Current  
A
Low Collector-Emitter Saturation Voltage  
Complementary Types:BCP53 (PNP)  
M
4
Top View  
C B  
1
2
PACKAGE INFORMATION  
3
K
F
L
E
Package  
MPQ  
Leader Size  
SOT-223  
2.5K  
13 inch  
D
G
H
J
ORDER INFORMATION  
Millimeter  
Millimeter  
Min. Max.  
0.18  
2.00 REF.  
0.20 0.40  
1.10 REF.  
2.30 REF.  
2.80 3.20  
REF.  
REF.  
Part Number  
Type  
Min.  
Max.  
6.70  
7.30  
3.80  
1.90  
4.75  
0.85  
A
B
C
D
E
F
5.90  
6.70  
3.30  
1.40  
4.45  
0.60  
G
H
J
K
L
-
BCP56-16-C  
Lead (Pb)-free and Halogen-free  
M
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
Collector-Base Voltage  
100  
80  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
5
V
Collector Current-Continuous  
Collector Power Dissipation  
Thermal Resistance from Junction to Ambient  
Storage Temperature  
1
A
PC  
1.5  
W
RθJA  
TSTG  
83.3  
-65~150  
°C/W  
°C  
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
Symbol Min.  
Typ.  
Max. Unit  
Test Conditions  
IC=100µA, IE=0  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
100  
80  
5
-
-
-
-
-
-
-
-
-
-
-
V
V
V
-
IC=10mA, IB=0  
-
100  
-
IE=10µA, IE=0  
-
nA VCB=30V, IE=0  
VCE=2V, IC=5mA  
hFE1  
25  
100  
25  
-
DC Current Gain  
hFE2  
250  
-
VCE=2V, IC=150mA  
VCE=2V, IC=500mA  
hFE3  
Collector-Emitter Saturation Voltage  
Base-Emitter Voltage  
VCE(sat)  
VBE(on)  
fT  
0.5  
1
V
V
IC=500mA, IB=50mA  
VCE=2V, IC=500mA  
-
Transition Frequency  
100  
-
MHz VCE=10V, IC=50mA, f=100MHz  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
18-Oct-2017 Rev. H  
Page 1 of 2  
BCP56-C  
1A , 100V  
NPN Silicon Medium Power Transistor  
Elektronische Bauelemente  
CHARACTERISTIC CURVES  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
18-Oct-2017 Rev. H  
Page 2 of 2  

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