BCV26 [ONSEMI]
PNP 达林顿晶体管;
| 型号： | BCV26 |
| 厂家： | 
ONSEMI |
| 描述： | PNP 达林顿晶体管 PC 光电二极管 晶体管 达林顿晶体管 |
| 文件： | 总9页 (文件大小：333K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
BCV26
C
E
SOT-23
Mark: FD
B
PNP Darlington Transistor
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
30
V
V
V
A
3
Collector-Base Voltage
40
10
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.2
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
*BCV26
PD
Total Device Dissipation
Derate above 25 C
350
2.8
mW
mW/ C
°
°
Thermal Resistance, Junction to Ambient
357
Rθ
C/W
°
JA
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997 Fairchild Semiconductor Corporation
PNP Darlington Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 10 mA, IB = 0
I = 10 A, I = 0
30
40
10
V
V
V
V(BR)CBO
V(BR)EBO
ICBO
Collector-Base Breakdown Voltage
µ
C
E
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
IE = 100 nA, IC = 0
VCB = 30 V, IE = 0
VEB = 10 V, IC = 0
0.1
0.1
A
µ
µ
IEBO
Emitter-Cutoff Current
A
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 1.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V
IC = 100 mA, VCE = 5.0 V
IC = 100 mA, IB = 0.1 mA
4,000
10,000
20,000
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
1.0
1.5
V
VCE(sat)
VBE(sat)
IC = 100 mA, IB = 0.1 mA
V
SMALL SIGNAL CHARACTERISTICS
Current Gain - Bandwidth Product
IC = 30 mA, VCE = 5.0 V,
f = 100 MHz
VCB = 30 V, IE = 0, f = 1.0 MHz
220
3.5
MHz
pF
fT
Collector Capacitance
CC
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
Typical Pulsed Current Gain
vs Collector Current
1.6
1.2
0.8
0.4
0
50
β = 1000
VCE = 5V
40
- 40 °C
125 °C
30
20
10
0
25 °C
125 °C
25 °C
- 40 °C
0.01
0.1
IC - COLLECTOR CURRENT (A)
1
0.001
0.01
0.1
1
IC - COLLECTOR CURRENT (A)
PNP Darlington Transistor
(continued)
Typical Characteristics (continued)
Base-Emitter Saturation
Voltage vs Collector Current
Base Emitter ON Voltage vs
Collector Current
2
2
1.6
1.2
0.8
0.4
0
β = 1000
- 40 °C
- 40 °C
1.6
25 °C
1.2
25 °C
125 °C
125 °C
0.8
V
= 5V
CE
0.4
0
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I C- COLLECTOR CURRENT (A)
I C- COLLECTOR CURRENT (A)
Collector-Cutoff Current
vs Ambient Temperature
Input and Output Capacitance
vs Reverse Bias Voltage
100
10
1
16
12
8
f = 1.0 MHz
VCB= 15V
3
C
ib
0.1
4
C
ob
0.01
25
0
50
75
100
125
0.1
1
10
100
TA - AMBIE NT TEMP ERATURE ( C)
REVERSE VOLTAGE (V)
°
Power Dissipation vs
Ambient Temperature
350
300
250
200
150
100
50
SOT-23
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
SOT-23 Tape and Reel Data
SOT-23 Packaging
Configuration: Figure 1.0
Packaging Description:
Customized Label
SOT-23 parts are shipped in tape. The carrier tape is
made from
a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 units per 7" or 177cm diameter reel. The reels are
dark bluein color and is madeof polystyrene plastic (anti-
static coated). Other option comes in 10,000 units per 13"
or 330cm diameter reel. This and some other options are
described in the Packaging Information table.
Antistatic Cover Tape
These full reels areindividually labeled and placed inside
a
standard intermediate made of recyclable corrugated
brown paper with aFairchild logo printing. One pizza box
contains eight reels maximum. And these intermediate
boxes are placed inside a labeled shipping box which
comesin different sizes depending on the number of parts
shipped.
Human Readable
Label
Embossed
CarrierTape
3P
3P
3P
3P
SOT-23 PackagingInformation
Standard
(no flow code)
PackagingOption
D87Z
Packagingtype
TNR
TNR
10,000
13"
SOT-23 Unit Orientation
Qty per Reel/Tube/Bag
Reel Size
3,000
7" Dia
Box Dimension (mm)
Max qty per Box
187x107x183 343x343x64
343mmx 342mmx 64mm
Intermediate box for L87Z Option
Human Readable Label
24,000
0.0082
0.1175
30,000
0.0082
0.4006
Weight per unit (gm)
Weight per Reel (kg)
Note/Comments
Human Readable Label sample
Human readable
Label
187mmx 107mmx 183mm
SOT-23 Tape Leader and Trailer
IntermediateBox forStandard Option
Configuration: Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
Leader Tape
300mm minimumor
75 empty pockets
500mm minimumor
125 empty pockets
September 1999, Rev. C
©2000 Fairchild Semiconductor International
SOT-23 Tape and Reel Data, continued
SOT-23 Embossed Carrier Tape
Configuration: Figure 3.0
P0
P2
D0
D1
T
E1
E2
W
F
Wc
B0
Tc
K0
A0
P1
User Direction of Feed
Dimensions are in millimeter
E1 E2
A0
B0
W
D0
D1
F
P1
P0
K0
T
Wc
5.2
Tc
Pkg type
SOT-23
(8mm)
3.15
+/-0.10
2.77
+/-0.10
8.0
+/-0.3
1.55
+/-0.05
1.125
1.75
+/-0.10
6.25
min
3.50
+/-0.05
4.0
+/-0.1
4.0
+/-0.1
1.30
+/-0.10
0.228
+/-0.013
0.06
+/-0.02
+/-0.125
+/-0.3
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
0.5mm
maximum
B0
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
Component Rotation
Sketch C (Top View)
Component lateral movement
A0
Sketch B (Top View)
Component Rotation
SOT-23 Reel Configuration: Figure 4.0
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7"Diameter Option
B Min
Dim C
See detail AA
Dim D
min
W3
13" Diameter Option
W2 max Measured at Hub
DETAIL AA
Dim W2
Dimensions are in inches and millimeters
Reel
Option
Tape Size
8mm
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W3 (LSL-USL)
7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
7" Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
8mm
13" Dia
September 1999, Rev. C
SOT-23 Package Dimensions
SOT-23 (FS PKG Code 49)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0082
September 1998, Rev. A1
©2000 Fairchild Semiconductor International
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not intended to be an exhaustive list of all such trademarks.
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Quiet Series™
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Advance Information
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This datasheet contains the design specifications for
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any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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The datasheet is printed for reference information only.
Rev. G
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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