BCV27 [ONSEMI]
NPN 达林顿晶体管;型号: | BCV27 |
厂家: | ONSEMI |
描述: | NPN 达林顿晶体管 光电二极管 晶体管 达林顿晶体管 |
文件: | 总6页 (文件大小:450K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BCV27
NPN Darlington Transistor
Description
C
This device is designed for applications requiring
extremely high current gain at collector currents to 1.0 A.
Sourced from process 05.
E
SOT-23
Mark: FF
B
Ordering Information
Part Number
Marking
Package
Packing Method
BCV27
FF
SOT-23 3L
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Value
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
30
40
10
V
V
Collector Current - Continuous
1.2
A
TJ, TSTG Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
-55 to +150
°C
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-
duty-cycle operations.
© 1997 Semiconductor Components Industries, LLC
September-2017, Rev. 2
Publication Order Number:
BCV27/D
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Max.
350
2.8
Unit
mW
Total Device Dissipation
Derate Above 25°C
mW/°C
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
357
Note:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
30
Typ.
Max.
Unit
V
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0
V(BR)CBO Collector-Base Breakdown Voltage
V(BR)EBO Emitter-Base Breakdown Voltage
IC = 10 μA, IE = 0
40
V
IE = 100 nA, IC = 0
10
V
ICBO
IEBO
Collector Cut-Off Current
Emitter Cut-Off Current
VCB = 30 V, IE = 0
0.1
0.1
μA
μA
VEB = 10 V, IC = 0
IC = 1.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V
IC = 100 mA, VCE = 5.0 V
4000
10000
20000
hFE
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA
1.0
1.5
V
V
VBE(sat) Base-Emitter Saturation Voltage
IC = 100 mA, IB = 0.1 mA
IC = 30 mA, VCE = 5.0 V,
f = 100 MHz
fT
Current Gain - Bandwidth Product
Collector Capacitance
220
3.5
MHz
pF
VCB = 30 V, IE = 0,
f = 1.0 MHz
Cc
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2
Typical Performance Characteristics
1.6
1.2
0.8
0.4
0
250
VCE = 5V
β = 1000
200
125 °C
150
- 40 °C
25 °C
100
25°C
125 °C
- 40 °C
50
0
1
10
100
1000
0.001
0.01
0.1
1
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (A)
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 1. Typical Pulsed Current Gain vs.
Collector Current
2
2
β = 1000
- 40 °C
1.6
1.2
0.8
0.4
0
1.6
1.2
0.8
0.4
0
- 40 °C
25 °C
25 °C
125 °C
125 °C
VCE= 5V
1
10
100
1000
1
10
100
1000
I C - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Figure 4. Base Emitter On Voltage vs.
Collector Current
Figure 3. Base-Emitter Saturation Voltage vs.
Collector Current
100
62.5
VCB= 30V
62
61.5
61
10
1
60.5
60
0.1
0.01
59.5
0.1
1
10
100
1000
25
50
75
100
125
RESISTANCE (k
)
Ω
TA- AMBIENT TEMPERATURE ( C)
°
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature
Figure 6. Collector-Emitter Breakdown Voltage with
Resistance Between Emitter-Base
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3
Typical Performance Characteristics (Continued)
500
400
300
200
100
0
f = 1.0 MHz
V
= 5V
ce
20
10
Cib
5
Cob
2
0.1
1
10
100
1
10
20
50
100 150
IC - COLLECTOR CURRENT (mA)
V
- COLLECTOR VOLTAGE(V)
Figure 8. Gain Bandwidth Product vs.
Collector Current
Figure 7. Input and Output Capacitance vs.
Reverser Voltage
350
300
250
SOT-23
200
150
100
50
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
Figure 9. Power Dissipation vs. Ambient Temperature
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ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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