BCW32LT1G [ONSEMI]
General Purpose Transistors; 通用晶体管型号: | BCW32LT1G |
厂家: | ONSEMI |
描述: | General Purpose Transistors |
文件: | 总6页 (文件大小:155K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BCW32LT1
General Purpose
Transistors
NPN Silicon
Features
http://onsemi.com
• Pb−Free Package is Available
COLLECTOR
3
MAXIMUM RATINGS
1
BASE
Rating
Symbol
Value
32
Unit
Vdc
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
CEO
V
CBO
V
EBO
2
32
Vdc
EMITTER
5.0
Vdc
Collector Current − Continuous
I
C
100
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
3
1
2
THERMAL CHARACTERISTICS
SOT−23 (TO−236AB)
CASE 318
Characteristic
Symbol
Value
Unit
STYLE 6
Total Device Dissipation
FR-5 Board
P
D
mW
(1)
225
T = 25°C
A
Derate above 25°C
1.8
mW/°C
°C/W
MARKING DIAGRAM
Thermal Resistance,
Junction−to−Ambient
R
556
q
JA
Total Device Dissipation
Alumina Substrate, T = 25°C
P
D
300
mW
(2)
A
D2 M
Derate above 25°C
2.4
mW/°C
°C/W
Thermal Resistance,
Junction−to−Ambient
R
417
q
JA
Junction and Storage Temperature
T , T
−55 to +150
°C
J
stg
M = Date Code
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
ORDERING INFORMATION
†
Device
Package
Shipping
BCW32LT1
SOT−23
3000 Units / Reel
3000 Units / Reel
BCW32LT1G
SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
January, 2005 − Rev. 1
BCW32LT1/D
BCW32LT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Collector−Emitter Breakdown Voltage
V
32
32
−
−
−
−
−
−
Vdc
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 2.0 mAdc, V = 0)
C
EB
Collector−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
5.0
E
C
Collector Cutoff Current
(V = 32 Vdc, I = 0)
I
CBO
−
−
−
−
100
10
nAdc
mAdc
CB
E
(V = 32 Vdc, I = 0, T = 100°C)
CB
E
A
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 2.0 mAdc, V = 5.0 Vdc)
200
−
−
−
−
450
0.25
0.70
C
CE
Collector−Emitter Saturation Voltage
(I = 10 mAdc, I = 0.5 mAdc)
V
Vdc
Vdc
CE(sat)
C
B
Base−Emitter On Voltage
(I = 2.0 mAdc, V = 5.0 Vdc)
V
BE(on)
0.55
C
CE
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
C
−
−
−
−
4.0
10
pF
dB
obo
(I = 0, V = 10 Vdc, f = 1.0 MHz)
E
CB
Noise Figure
NF
(I = 0.2 mAdc, V = 5.0 Vdc, R = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
C
CE
S
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
20
10
100
I
C
= 1.0 mA
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
50
I
C
= 1.0 mA
R ≈ ∞
S
R = 0
S
20
300 mA
300 mA
100 mA
10
5.0
7.0
5.0
100 mA
2.0
1.0
10 mA
30 mA
0.5
0.2
0.1
30 mA
3.0
2.0
10 mA
10 20
50 100 200
500 1ꢀk
2ꢀk
5ꢀk 10ꢀk
10
20
50 100 200
500 1ꢀk
2ꢀk
5ꢀk 10ꢀk
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
Figure 2. Noise Current
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2
BCW32LT1
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
500ꢀk
1ꢀM
500ꢀk
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
200ꢀk
100ꢀk
50ꢀk
200ꢀk
100ꢀk
50ꢀk
20ꢀk
20ꢀk
10ꢀk
10ꢀk
5ꢀk
2.0 dB
1.0 dB
5ꢀk
2ꢀk
1ꢀk
3.0 dB
4.0 dB
2.0 dB
2ꢀk
1ꢀk
3.0 dB
5.0 dB
8.0 dB
6.0 dB
10 dB
500
500
200
100
50
200
100
10
20 30
50 70 100
200 300
500 700 1ꢀk
10
20 30
50 70 100
200 300
500 700 1ꢀk
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 3. Narrow Band, 100 Hz
Figure 4. Narrow Band, 1.0 kHz
500ꢀk
10 Hz to 15.7 kHz
200ꢀk
100ꢀk
50ꢀk
Noise Figure is defined as:
2
20ꢀk
2
R
n S
2
1ń2
Ǔ
e
n
) 4KTR ) I
S
10 ǒ
10ꢀk
5ꢀk
NF + 20 log
4KTR
S
1.0 dB
e
n
= Noise Voltage of the Transistor referred to the input. (Figure 3)
2ꢀk
1ꢀk
2.0 dB
I
= Noise Current of the Transistor referred to the input.
3.0 dB
(Figure 4)
= Boltzman’s Constant (1.38 x 10
n
K
500
−23
j/°K)
5.0 dB
8.0 dB
T
R
= Temperature of the Source Resistance (°K)
= Source Resistance (W)
200
100
50
S
20 30
50 70 100
200 300
500 700 1ꢀk
10
I , COLLECTOR CURRENT (mA)
C
Figure 5. Wideband
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3
BCW32LT1
TYPICAL STATIC CHARACTERISTICS
400
200
T = 125°C
J
25°C
−ꢁ55°C
100
80
60
V
V
= 1.0 V
= 10 V
CE
CE
40
0.004 0.006 0.01
0.02 0.03 0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
3.0
2.0
5.0 7.0 10
20
30
50 70 100
I , COLLECTOR CURRENT (mA)
C
Figure 6. DC Current Gain
1.0
100
T = 25°C
A
T = 25°C
J
I = 500 mA
B
PULSE WIDTH = 300 ms
DUTY CYCLE ≤ 2.0%
0.8
0.6
0.4
0.2
0
80
60
400 mA
300 mA
200 mA
I
C
= 1.0 mA
10 mA
50 mA
100 mA
40
20
0
100 mA
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
5.0 10 20
0
5.0
10
15
20
25
30
35
40
I , BASE CURRENT (mA)
B
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. Collector Saturation Region
Figure 8. Collector Characteristics
1.4
1.2
1.6
0.8
0
*APPLIES for I /I ≤ h /2
C B
FE
T = 25°C
J
25°C to 125°C
−55°C to 25°C
1.0
0.8
0.6
0.4
*q for V
VC
CE(sat)
V
@ I /I = 10
C B
BE(sat)
−ꢁ0.8
−ꢁ1.6
−ꢁ2.4
V
BE(on)
@ V = 1.0 V
CE
25°C to 125°C
−55°C to 25°C
0.2
0
q
for V
BE
VB
V
@ I /I = 10
C B
CE(sat)
0.1 0.2
0.5 1.0
2.0
5.0
10
20
50 100
0.1
0.2
0.5
1.0 2.0
5.0 10 20
50 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 9. “On” Voltages
Figure 10. Temperature Coefficients
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4
BCW32LT1
TYPICAL DYNAMIC CHARACTERISTICS
10
7.0
5.0
T = 25°C
J
f = 1.0 MHz
C
ib
C
ob
3.0
2.0
1.0
0.05 0.1
0.2
0.5 1.0
2.0
5.0
10
20
50
V , REVERSE VOLTAGE (VOLTS)
R
Figure 11. Capacitance
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5
BCW32LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236AB)
CASE 318−08
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER
A
L
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
3
S
C
B
1
2
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
V
G
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
G
H
J
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
H
J
D
K
K
L
S
V
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
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Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
BCW32LT1/D
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