BCX71J [ONSEMI]
General Purpose Transistor;
| 型号： | BCX71J |
| 厂家： | 
ONSEMI |
| 描述： | General Purpose Transistor 小信号双极晶体管 |
| 文件： | 总6页 (文件大小：261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCX71JLT1G
General Purpose Transistor
PNP Silicon
Features
• Moisture Sensitivity Level: 1
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• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
COLLECTOR
3
Compliant
1
BASE
MAXIMUM RATINGS
2
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Symbol
Value
−45
Unit
Vdc
EMITTER
V
CEO
V
CBO
V
EBO
−45
Vdc
3
−5.0
−100
Vdc
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
I
C
mAdc
1
2
SOT−23
CASE 318
STYLE 6
Symbol
Max
Unit
Total Device Dissipation (Note 1)
P
D
350
mW
T
A
= 25°C
Derate above 25°C
2.8
150
357
mW/°C
°C
MARKING DIAGRAM
Storage Temperature
T
stg
Thermal Resistance,
R
°C/W
ꢀ
JA
Junction-to-Ambient (Note 1)
BJ M G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
G
1. Package mounted on 99.5% alumina 10 X 8 X 0.6 mm.
BJ
M
G
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
BCX71JLT1G
SOT−23
3000/Tape & Reel
(Pb−free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
August, 2009 − Rev. 3
BCX71J/D
BCX71JLT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
V
Vdc
Vdc
(BR)CEO
(I = 2.0 mAdc, I = 0)
−45
−
−
C
B
Collector−Base Breakdown Voltage
(I = 1.0 ꢁ Adc, I = 0)
V
(BR)EBO
−5.0
E
E
Collector Cutoff Current
I
CES
(V = 32 Vdc)
(V = 32 Vdc, T = 150°C)
CE
−
−
−20
−20
nAdc
ꢁ Adc
CE
A
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 10 ꢁ Adc, V = 5.0 Vdc)
40
−
C
CE
(I = 2.0 mAdc, V = 5.0 Vdc)
250
100
250
460
−
500
C
CE
(I = 50 mAdc, V = 1.0 Vdc)
C
CE
(I = 2.0 mAdc, V = 5.0 Vdc, f = 1.0 kHz)
C
CE
Collector−Emitter Saturation Voltage
(I = 10 mAdc, I = 0.25 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
−0.25
−0.55
C
B
(I = 50 mAdc, I = 1.25 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = 1.0 mAdc, V = 5.0 Vdc)
V
BE(sat)
−0.6
−0.68
−0.85
−1.05
C
CE
(I = 10 mAdc, V = 5.0 Vdc)
C
CE
Base−Emitter On Voltage
V
Vdc
pF
BE(on)
(I = 2.0 mAdc, V = 5.0 Vdc)
−0.6
−
−0.75
6.0
C
CE
Output Capacitance
C
obo
(V = 10 Vdc, I = 0, f = 1.0 MHz)
CE
C
Noise Figure
NF
dB
(I = 0.2 mAdc, V = 5.0 Vdc, R = 2.0 kꢂ, f = 1.0 kHz, BW = 200 Hz)
−
6.0
C
CE
S
SWITCHING CHARACTERISTICS
Turn−On Time
(I = 10 mAdc, I = 1.0 mAdc)
C
t
ns
ns
on
−
−
150
800
B1
Turn−Off Time
t
off
(I = 1.0 mAdc, V = 3.6 Vdc, R1 = R2 = 5.0 kꢂ, R = 990 ꢂ)
B2
BB
L
TYPICAL NOISE CHARACTERISTICS
(VCE = −ꢀ5.0 Vdc, TA = 25°C)
10
1.0
BANDWIDTH = 1.0 Hz
≈ 0
7.0
5.0
BANDWIDTH = 1.0 Hz
R
7.0
5.0
S
R ≈ ∞
S
I = 1.0 mA
C
I
C
= 10 ꢁ A
30 ꢁ A
3.0
2.0
300 ꢁ A
100 ꢁ A
1.0
3.0
100 ꢁ A
300 ꢁ A
0.7
0.5
1.0 mA
2.0
0.3
0.2
30 ꢁ A
10 ꢁ A
500 1.0ꢀk 2.0ꢀk
1.0
0.1
10 20
50 100 200 500
1.0 k 2.0 k 5.0 k 10 k
10 20
50 100 200
5.0ꢀk 10ꢀk
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
Figure 2. Noise Current
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2
BCX71JLT1G
NOISE FIGURE CONTOURS
(VCE = −ꢀ5.0 Vdc, TA = 25°C)
1.0ꢀM
500ꢀk
1.0ꢀM
BANDWIDTH = 1.0 Hz
500ꢀk
BANDWIDTH = 1.0 Hz
200ꢀk
100ꢀk
50ꢀk
200ꢀk
100ꢀk
50ꢀk
20ꢀk
10ꢀk
20ꢀk
10ꢀk
0.5 dB
0.5 dB
5.0ꢀk
5.0ꢀk
1.0 dB
1.0 dB
2.0ꢀk
1.0ꢀk
500
2.0ꢀk
1.0ꢀk
500
2.0 dB
2.0 dB
3.0 dB
3.0 dB
5.0 dB
200
100
200
100
5.0 dB
10
20 30
50 70 100
200 300
500 700 1.0ꢀk
10
20 30
50 70 100
200 300
500 700 1.0ꢀk
I , COLLECTOR CURRENT (ꢁ A)
C
I , COLLECTOR CURRENT (ꢁ A)
C
Figure 3. Narrow Band, 100 Hz
Figure 4. Narrow Band, 1.0 kHz
1.0ꢀM
500ꢀk
10 Hz to 15.7 kHz
200ꢀk
100ꢀk
50ꢀk
Noise Figure is Defined as:
2
2
R
n S
2
1ń2
e
n
) 4KTR ) I
S
20ꢀk
10ꢀk
10ƪ
ƫ
NF + 20 log
4KTR
S
0.5 dB
e
n
= Noise Voltage of the Transistor referred to the input. (Figure 3)
5.0ꢀk
2.0ꢀk
I
n
= Noise Current of the Transistor referred to the input. (Figure 4)
1.0 dB
2.0 dB
−23
K
T
R
= Boltzman’s Constant (1.38 x 10
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)
j/°K)
1.0ꢀk
500
S
3.0 dB
5.0 dB
200
100
20 30
50 70 100
200 300
500 700 1.0ꢀk
10
I , COLLECTOR CURRENT (ꢁ A)
C
Figure 5. Wideband
TYPICAL STATIC CHARACTERISTICS
400
200
T = 125°C
J
25°C
-ꢁ55°C
100
80
60
V
V
= 1.0 V
= 10 V
CE
CE
40
0.003 0.005
0.01
0.02 0.03 0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
3.0
2.0
5.0 7.0 10
20 30
50 70 100
I , COLLECTOR CURRENT (mA)
C
Figure 6. DC Current Gain
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3
BCX71JLT1G
TYPICAL STATIC CHARACTERISTICS
1.0
0.8
0.6
0.4
0.2
0
100
I = 400 ꢁ A
B
T = 25°C
PULSE WIDTH = 300 ꢁ s
DUTY CYCLE ≤ 2.0%
T
= 25°C
A
A
350 ꢁ A
80
60
300 ꢁ A
250 ꢁ A
I = 1.0 mA
C
10 mA
50 mA
100 mA
200 ꢁ A
150 ꢁ A
40
20
0
100 ꢁ A
50 ꢁ A
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
5.0 10 20
0
5.0
10
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
15
20
25
30
35
40
I , BASE CURRENT (mA)
B
V
Figure 7. Collector Saturation Region
Figure 8. Collector Characteristics
1.4
1.2
1.6
0.8
0
T = 25°C
J
*APPLIES for I /I ≤ h /2
C B
FE
1.0
0.8
0.6
0.4
25°C to 125°C
-55°C to 25°C
*ꢀ
for V
VC CE(sat)
V
@ I /I = 10
C B
BE(sat)
0.8
1.6
2.4
V
BE(on)
@ V = 1.0 V
CE
25°C to 125°C
-55°C to 25°C
ꢀ
for V
BE
0.2
0
VB
V
@ I /I = 10
C B
CE(sat)
0.1 0.2
0.5 1.0
2.0
5.0
10
20
50 100
0.1
0.2
0.5
1.0 2.0
5.0
10 20
50 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 9. “On” Voltages
Figure 10. Temperature Coefficients
500
1000
V = -ꢀ3.0 V
CC
I /I = 10
V
= 3.0 V
CC
I /I = 10
700
500
300
200
C B
C B
T = 25°C
I = I
B1 B2
J
t
s
300
200
T = 25°C
J
100
70
50
100
70
50
30
20
t
r
t
f
30
20
t @ V
d
= 0.5 V
BE(off)
10
7.0
5.0
10
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
-1.0
-ꢀ2.0 -ꢀ3.0
-10
-ꢀ20 -ꢀ30
-100
-ꢀ50 -ꢀ70
-ꢀ5.0 -ꢀ7.0
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 11. Turn−On Time
Figure 12. Turn−Off Time
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4
BCX71JLT1G
TYPICAL DYNAMIC CHARACTERISTICS
500
10
7.0
5.0
T = 25°C
J
T = 25°C
J
V
CE
= 20 V
300
200
C
ib
5.0 V
3.0
2.0
100
70
C
ob
50
1.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 13. Current−Gain — Bandwidth Product
Figure 14. Capacitance
20
10
200
V
= -10 Vdc
V
= 10 Vdc
CE
f = 1.0 kHz
CE
f = 1.0 kHz
100
T = 25°C
A
T = 25°C
A
7.0
5.0
h
≈ 200
70
50
fe
@ I = −1.0 mA
C
h
≈ 200
fe
3.0
2.0
30
20
@ I = 1.0 mA
C
1.0
0.7
0.5
10
7.0
5.0
0.3
0.2
3.0
2.0
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50
100
0.1
0.2
0.5 1.0
2.0
5.0
10
20
50 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 15. Input Impedance
Figure 16. Output Admittance
4
10
V
CC
= 30 V
3
10
10
I
CEO
2
1
0
10
I
CBO
AND
@ V
I
= 3.0 V
BE(off)
CEX
10
-1
10
10
-2
-4 -2
0
+20 +40 +60 +80 +100 +120 +140+160
0
0
T , JUNCTION TEMPERATURE (°C)
J
Figure 17. Typical Collector Leakage Current
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5
BCX71JLT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEE VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
3
H
E
E
c
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
b
0.25
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
e
q
A
L
L1
A1
L1
VIEW C
H
E
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
BCX71J/D
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