BD440S [ONSEMI]

4.0 A, 60 V PNP Power Bipolar Jucntion Transistor;


型号：	BD440S
厂家：	ONSEMI
描述：	4.0 A, 60 V PNP Power Bipolar Jucntion Transistor 局域网开关晶体管功率双极晶体管
文件：	总4页 (文件大小：59K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BD436, BD438, BD440,

BD442

Plastic Medium Power

Silicon PNP Transistor

This series of plastic, medium−power silicon PNP transistors can be

used for for amplifier and switching applications. Complementary

types are BD437 and BD441.

http://onsemi.com

4.0 AMP POWER

Features

TRANSISTORS PNP SILICON

• Pb−Free Packages are Available*

TO−225AA

CASE 77

STYLE 1

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

BD436

BD438

BD440

BD442

Vdc

CEO

CBO

EBO

MARKING DIAGRAM

Collector−Base Voltage

BD436

BD438

BD440

BD442

Vdc

YWW

BD4xxG

Emitter−Base Voltage

Collector Current

Base Current

5.0

4.0

1.0

Vdc

Adc

BD4xx = Device Code

xx = 36, 36T, 38, 40, 42

Total Device Dissipation @ T = 25°C

288

W/°C

Derate above 25°C

= Year

= Work Week

= Pb−Free Package

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

ORDERING INFORMATION

Symbol

Max

Unit

Device

Package

Shipping

Thermal Resistance, Junction−to−Case

3.5

°C/W

BD436

TO−225AA

500 Units/Box

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

BD436G

TO−225AA

(Pb−Free)

BD436T

TO−225AA

50 Units/Rail

BD436TG

TO−225AA

(Pb−Free)

BD438

TO−225AA

500 Units/Box

BD438G

TO−225AA

(Pb−Free)

BD440

TO−225AA

500 Units/Box

BD440G

TO−225AA

(Pb−Free)

BD442

TO−225AA

500 Units/Box

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

BD442G

TO−225AA

(Pb−Free)

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

December, 2005 − Rev. 14

BD438/D

BD436, BD438, BD440, BD442

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Collector−Emitter Breakdown Voltage

(I = 100 mA, I = 0)

BD436

BD438

BD440

BD442

−

Vdc

(BR)CEO

(BR)CBO

(BR)EBO

Collector−Base Breakdown Voltage

(I = 100 mA, I = 0)

BD436

BD438

BD440

BD442

−

Vdc

Emitter−Base Breakdown Voltage

(I = 100 mA, I = 0)

5.0

−

Vdc

Collector Cutoff Current

(V = 32 V, I = 0)

mAdc

CBO

BD436

BD438

BD440

BD442

−

0.1

(V = 45 V, I = 0)

(V = 60 V, I = 0)

(V = 80 V, I = 0)

Emitter Cutoff Current

−

1.0

mAdc

EBO

(V = 5.0 V)

DC Current Gain

BD436

BD438

BD440

BD442

−

(I = 10 mA, V = 5.0 V)

DC Current Gain

(I = 500 mA, V = 1.0 V)

BD436

BD438

BD440

BD442

−

475

DC Current Gain

(I = 2.0 A, V = 1.0 V)

BD436

BD438

BD440

BD442

−

Collector Saturation Voltage

(I = 2.0 A, I = 0.2 A)

Vdc

CE(sat)

BD436

BD438

BD440

BD442

−

0.5

0.7

0.8

(I = 3.0 A, I = 0.3 A)

Base−Emitter On Voltage

(I = 2.0 A, V = 1.0 V)

BD436/BD438

BD440/BD442

−

1.1

1.5

Vdc

BE(ON)

Current−Gain − Bandwidth Product

(V = 1.0 V, I = 250 mA, f = 1.0 MHz)

3.0

−

MHz

http://onsemi.com

BD436, BD438, BD440, BD442

2.0

1.6

= 10 mA

100 mA

1.0 A

3.0 A

1.2

0.8

0.4

T =

255C

0.050.070.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

50 70 100

200 300 500

I , BASE CURRENT (mA)

Figure 1. Collector Saturation Region

200

100

I , COLLECTOR CURRENT (AMP)

Figure 2. Current Gain

2.0

T = 25°C

5 ms

1.6

1.2

4.0

T = 150°C

SECONDARY BREAKDOWN

1.0

0.5

THERMAL LIMIT T = 25°C

BONDING WIRE LIMIT

0.8

0.4

@ I /I = 10

BE(sat)

@ V = 2.0 V

CURVES APPLY BELOW RATED V

CEO

BD438

BD440

BD442

@ I /I = 10

C B

CE(sat)

0.1

0.005 0.010.020.030.05 0.1 0.2 0.3 0.5 1.02.0 3.04.0

1.0

2.0

5.0

100

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

I , COLLECTOR CURRENT (AMP)

Figure 4. Active Region Safe Operating Area

Figure 3. “On” Voltage

http://onsemi.com

BD436, BD438, BD440, BD442

PACKAGE DIMENSIONS

TO−225AA

CASE 77−09

ISSUE Z

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 077−01 THRU −08 OBSOLETE, NEW STANDARD

077−09.

−B−

−A−

INCHES

DIM MIN MAX

MILLIMETERS

2 3

MIN

10.80

7.50

2.42

0.51

2.93

MAX

11.04

7.74

2.66

0.66

3.30

0.425

0.295

0.095

0.020

0.115

0.435

0.305

0.105

0.026

0.130

0.094 BSC

2.39 BSC

0.050

0.015

0.575

0.095

0.025

0.655

1.27

0.39

14.61

2.41

0.63

16.63

TYP

0.148

0.045

0.025

0.145

0.040

0.158

0.065

0.035

0.155

−−−

3.76

1.15

0.64

3.69

1.02

4.01

1.65

0.88

3.93

−−−

0.25 (0.010)

D 2 PL

0.25 (0.010)

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

Literature Distribution Center for ON Semiconductor

P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada

Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

BD438/D

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