BDC01DRL1G [ONSEMI]

One Watt Amplifier Transistor;
BDC01DRL1G
型号: BDC01DRL1G
厂家: ONSEMI    ONSEMI
描述:

One Watt Amplifier Transistor

放大器 晶体管
文件: 总5页 (文件大小:114K)
中文:  中文翻译
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www.onsemi.com  
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BDC01D  
One Watt Amplifier  
Transistor  
NPN Silicon  
http://onsemi.com  
Features  
Pb−Free Package is Available*  
COLLECTOR  
2
MAXIMUM RATINGS  
3
BASE  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
100  
100  
5.0  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
V
CBO  
V
EBO  
1
EMITTER  
Collector Current − Continuous  
I
0.5  
C
Total Device Dissipation @ T = 25°C  
P
1.0  
8.0  
W
mW/°C  
A
D
Derate above 25°C  
TO−92 (TO−226)  
CASE 29−10  
STYLE 1  
Total Device Dissipation @ T = 25°C  
P
2.5  
20  
W
mW/°C  
C
D
Derate above 25°C  
1
Operating and Storage Junction  
Temperature Range  
T , T  
J
−55 to +150  
°C  
2
stg  
3
THERMAL CHARACTERISTICS  
Characteristic  
MARKING DIAGRAM  
Symbol  
Max  
125  
50  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case  
R
q
JA  
JC  
R
q
BDC  
01D  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
AYWWG  
G
BDC01D = Device Code  
A
= Assembly Location  
Y
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
BDC01DRL1  
BDC01DRL1G  
TO−92  
2000 / Tape & Reel  
5000 / Tape & Reel  
TO−92  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 2  
BDC01D/D  
BDC01D  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
CollectorEmitter Voltage  
V
100  
Vdc  
mAdc  
nAdc  
(BR)CEO  
(I = 10 mA, I = 0)  
C
B
Collector Cutoff Current  
I
0.1  
100  
CBO  
(V = 100 V, I = 0)  
CB  
E
Emitter Cutoff Current  
I
EBO  
(I = 0, V = 5.0 V)  
C
EB  
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
(I = 100 mA, V = 1.0 V)  
40  
25  
400  
C
CE  
CE  
(I = 500 mA, V = 2.0 V)  
C
CollectorEmitter Saturation Voltage (Note 1)  
(I = 1000 mA, I = 100 mA)  
V
0.7  
Vdc  
Vdc  
CE(sat)  
C
B
CollectorEmitter On Voltage (Note 1)  
(I = 1000 mA, V = 1.0 V)  
V
BE(on)  
1.2  
C
CE  
DYNAMIC CHARACTERISTICS  
Current Gain Bandwidth Product  
f
50  
MHz  
pF  
T
(I = 200 mA, V = 5.0 V, f = 20 MHz)  
C
CE  
Output Capacitance  
(V = 10 V, I = 0, f = 1.0 MHz)  
C
30  
ob  
CB  
E
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle 2.0%.  
400  
T = 125°C  
J
V
= 1.0 V  
CE  
200  
25°C  
−55°C  
100  
80  
60  
40  
0.5  
0.7  
1.0  
2.0  
3.0  
5.0  
7.0  
10  
20  
30  
50  
70  
100  
200  
300  
500  
I , COLLECTOR CURRENT (mA)  
C
Figure 1. DC Current Gain  
http://onsemi.com  
2
 
BDC01D  
1.0  
0.8  
1.0  
T = 25°C  
J
T = 25°C  
J
0.8  
V
@ I /I = 10  
C B  
BE(sat)  
50  
mA  
I
C
= 10 mA  
100 mA  
250 mA  
500 mA  
0.6  
0.4  
0.2  
0
0.6  
0.4  
0.2  
0
V
@ V = 1.0 V  
CE  
BE(on)  
V
@ I /I = 10  
C B  
CE(sat)  
0.05 0.1 0.2  
0.5  
1.0  
2.0  
5.0  
10  
20  
50  
0.5 1.0  
2.0  
5.0  
10  
20  
50  
100 200  
500  
I , BASE CURRENT (mA)  
B
I , COLLECTOR CURRENT (mA)  
C
Figure 2. Collector Saturation Region  
Figure 3. “On” Voltages  
80  
−0.8  
−1.2  
T = 25°C  
J
60  
40  
C
ibo  
−1.6  
20  
q
for V  
BE  
VB  
−2.0  
−2.4  
−2.8  
10  
8.0  
6.0  
C
obo  
4.0  
0.1 0.2  
0.5 1.0 2.0  
5.0 10  
20  
50 100  
0.5  
1.0 2.0  
5.0  
10  
20  
50  
100 200  
500  
I , COLLECTOR CURRENT (mA)  
C
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 4. Base−Emitter Temperature Coefficient  
Figure 5. Capacitance  
300  
200  
V
= 2.0 V  
CE  
DUTY CYCLE 10%  
T = 25°C  
J
2 k  
1 k  
1.0 ms  
100 ms  
500  
100  
1.0 s  
T
= 25°C  
C
T
A
= 25°C  
200  
100  
50  
70  
50  
dc  
dc  
CURRENT LIMIT  
THERMAL LIMIT  
SECOND BREAKDOWN LIMIT  
MPSW05  
20  
10  
MPSW06  
30  
1.0  
2.0  
V
5.0  
10  
20  
60 80 100  
2.0 3.0  
5.0 7.0 10  
20 30  
50 70 100  
200  
, COLLECTOR−EMITTER VOLTAGE (VOLTS)  
I , COLLECTOR CURRENT (mA)  
C
CE  
Figure 6. Current−Gain — Bandwidth Product  
Figure 7. Active Region — Safe Operating Area  
http://onsemi.com  
3
BDC01D  
PACKAGE DIMENSIONS  
TO−92 (TO−226)  
CASE 29−10  
ISSUE AL  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
A
2. CONTROLLING DIMENSION: INCH.  
3. CONTOUR OF PACKAGE BEYOND DIMENSION R  
IS UNCONTROLLED.  
4. DIMENSION F APPLIES BETWEEN P AND L.  
DIMENSIONS D AND J APPLY BETWEEN L AND K  
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED  
IN P AND BEYOND DIMENSION K MINIMUM.  
B
K
R
SEATING  
PLANE  
P
L
F
INCHES  
DIM MIN MAX  
MILLIMETERS  
MIN  
4.44  
7.37  
3.18  
MAX  
5.21  
7.87  
4.19  
0.533  
0.482  
1.39  
2.66  
0.61  
−−−  
A
B
C
D
F
0.175  
0.290  
0.125  
0.018  
0.016  
0.045  
0.095  
0.018  
0.500  
0.250  
0.080  
0.205  
0.310  
0.165  
0.021 0.457  
0.019 0.407  
X X  
D
G
G
H
J
0.055  
0.105  
0.024  
1.15  
2.42  
0.46  
H
R
J
K
L
−−− 12.70  
−−−  
0.105  
6.35  
2.04  
−−−  
3.43  
−−−  
N
P
R
2.66  
2.54  
−−−  
SECTION X−X  
C
−−− 0.100  
0.135 −−−  
1
2
3
N
N
STYLE 14:  
PIN 1. EMITTER  
2. COLLECTOR  
3. BASE  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
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BDC01D/D  

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