BF256AG [ONSEMI]

JFET N-Channel 30V TO-92;
BF256AG
型号: BF256AG
厂家: ONSEMI    ONSEMI
描述:

JFET N-Channel 30V TO-92

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中文:  中文翻译
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www.onsemi.com  
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or  
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application  
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BF256A  
BF256A is a Preferred Device  
JFET - General Purpose  
N–Channel  
N–Channel Junction Field Effect Transistor designed for VHF and  
UHF applications.  
http://onsemi.com  
Low Cost TO–92 Type Package  
Forward Transfer Admittance, Y = 4.5 mmhos (Min)  
1 DRAIN  
fs  
Transfer Capacitance – C = 0.7 (Typ)  
rss  
Power Gain at f = 800 MHz, Typ. = 11 dB  
3
GATE  
MAXIMUM RATINGS  
2 SOURCE  
Rating  
Drain–Source Voltage  
Drain–Gate Voltage  
Symbol  
Value  
30  
Unit  
Vdc  
V
DS  
DG  
GS  
TO–92  
CASE 29  
STYLE 5  
V
V
30  
Vdc  
Gate–Source Voltage  
Forward Gate Current  
Total Device Dissipation  
30  
Vdc  
1
2
I
10  
mAdc  
G(f)  
3
MARKING DIAGRAMS  
P
D
@ T = 25°C  
360  
2.88  
mW  
mW/°C  
A
Derate above 25°C  
BF  
Operating and Storage Channel  
Temperature Range  
T
,
–65 to +150  
°C  
channel  
stg  
256A  
YWW  
T
500  
400  
300  
200  
Y
WW  
= Year  
= Work Week  
ORDERING INFORMATION  
Device  
BF256A  
Package  
Shipping  
TO–92  
5000 Units/Box  
Preferred devices are recommended choices for future use  
and best overall value.  
100  
0
0
25  
50  
75  
100 125  
150  
175  
200  
FREE AIR TEMPERATURE (°C)  
Figure 1. Power Derating Curve  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
September, 2001 – Rev. 3  
BF256A/D  
BF256A  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Gate–Source Breakdown Voltage  
Gate–Source Voltage  
(–I = –1.0 µAdc, V  
= 0)  
= 15 Vdc, I = 200 µA)  
–V  
(BR)GSS  
30  
0.5  
Vdc  
Vdc  
G
DS  
(V  
DS  
–V  
GS  
7.5  
5.0  
D
Gate Reverse Current  
(–V  
= 20 Vdc, V  
= 0)  
–I  
GSS  
nAdc  
GS  
DS  
ON CHARACTERISTICS  
Zero–Gate–Voltage Drain Current (Note 1.)  
(V  
= 15 Vdc, V  
= 0)  
I
3.0  
7.0  
mAdc  
DS  
GS  
DSS  
SMALL–SIGNAL CHARACTERISTICS  
Forward Transfer Admittance  
Reverse Transfer Capacitance  
Output Capacitance  
(V  
= 15 Vdc, V  
= 0, f = 1 kHz)  
|Y |  
fs  
4.5  
5.0  
0.7  
mmhos  
pF  
DS  
GS  
= 1 Vdc, f = 1 MHz)  
(V  
DS  
= 20 Vdc, –V  
C
GS  
rss  
oss  
gfs  
(V  
= 20 Vdc, V  
= 0, f = 1 MHz)  
C
1.0  
pF  
DS  
GS  
= 15 Vdc, V  
Cut–Off Frequency (Note 2.)  
(V  
DS  
= 0)  
f
1000  
MHz  
GS  
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.  
2. The frequency at which gfs is 0.7 of its value at 1 KHz.  
5
4.5  
10  
9
–V  
= 0 V  
4
V
= 15 Vdc  
8
7
6
5
4
3
2
GS  
DS  
3.5  
3
0.2 V  
0.4 V  
2.5  
2
1.5  
1
0.6 V  
0.8 V  
0.5  
0
1
0
BF256A  
5
0
10  
15  
20  
= 0  
25  
0
2
4
6
8
10  
12 14 16 18 20  
I
, DRAIN CURRENT (mA) @ V  
V
, DRAIN–TO–SOURCE VOLTAGE (VOLTS)  
DSS  
GS  
DS  
Figure 2. Correlation Between  
–V and I  
Figure 3. Drain Current versus  
Drain–to–Source Voltage  
GS(off)  
DSS  
http://onsemi.com  
2
BF256A  
10  
1
100  
10  
100  
10  
100  
10  
V
V
Y
= 15 Vdc  
= 0  
= g + j  
is bis  
V
V
Y
= 15 Vdc  
= 0  
= g – j  
fs bfs  
DS  
GS  
DS  
GS  
fs  
b
is  
is  
g
fs  
–b  
fs  
1
1
0.1  
1
–g  
is  
0.1  
0.1  
0.01  
0.1  
10  
100  
f, FREQUENCY (MHz)  
1000  
10  
100  
f, FREQUENCY (MHz)  
1000  
Figure 4. Input Admittance versus Frequency  
Figure 5. Forward Transfer Admittance versus  
Frequency  
1
1
10  
1
10  
1
V
V
Y
= 15 Vdc  
= 0  
= g + j  
os bos  
V
V
Y
= 15 Vdc  
= 0  
= –g – j  
rs brs  
DS  
GS  
os  
DS  
GS  
rs  
g
os  
0.1  
0.1  
–b  
rs  
b
os  
–g  
rs  
0.1  
0.1  
0.01  
0.01  
0.01  
0.01  
0.001  
0.001  
10  
100  
f, FREQUENCY (MHz)  
1000  
10  
100  
1000  
f, FREQUENCY (MHz)  
Figure 6. Reverse Transfer Admittance  
versus Frequency  
Figure 7. Output Admittance versus  
Frequency  
5
4
3
2
1.0  
V
= 20 Vdc  
DS  
f = 1 MHz  
0.5  
V
= 20 Vdc  
DS  
f = 1 MHz  
1
0
0
0
1
2
3
4
5
6
7
8
9
10  
0
2
4
6
8
10  
–V , GATE–SOURCE VOLTAGE (VOLTS)  
GS  
–V , GATE–SOURCE VOLTAGE (VOLTS)  
GS  
Figure 8. Input Capacitance versus  
Gate–Source Voltage  
Figure 9. Reverse Transfer Capacitance  
versus Gate–Source Voltage  
http://onsemi.com  
3
BF256A  
PACKAGE DIMENSIONS  
TO–92 (TO–226)  
CASE 29–11  
ISSUE AL  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
A
B
2. CONTROLLING DIMENSION: INCH.  
3. CONTOUR OF PACKAGE BEYOND DIMENSION R  
IS UNCONTROLLED.  
4. LEAD DIMENSION IS UNCONTROLLED IN P AND  
BEYOND DIMENSION K MINIMUM.  
R
P
L
INCHES  
DIM MIN MAX  
MILLIMETERS  
SEATING  
PLANE  
K
MIN  
4.45  
4.32  
3.18  
0.407  
1.15  
2.42  
0.39  
12.70  
6.35  
2.04  
---  
MAX  
5.20  
5.33  
4.19  
0.533  
1.39  
2.66  
0.50  
---  
A
B
C
D
G
H
J
0.175  
0.170  
0.125  
0.016  
0.045  
0.095  
0.015  
0.500  
0.250  
0.080  
---  
0.205  
0.210  
0.165  
0.021  
0.055  
0.105  
0.020  
---  
D
X X  
G
J
H
V
K
L
---  
---  
C
N
P
R
V
0.105  
0.100  
---  
2.66  
2.54  
---  
SECTION X–X  
0.115  
0.135  
2.93  
3.43  
1
N
---  
---  
N
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes  
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,  
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.  
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or  
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold  
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable  
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim  
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.  
PUBLICATION ORDERING INFORMATION  
Literature Fulfillment:  
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Phone: 81–3–5740–2700  
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For additional information, please contact your local  
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BF256A/D  

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