BF256AG [ONSEMI]
JFET N-Channel 30V TO-92;型号: | BF256AG |
厂家: | ONSEMI |
描述: | JFET N-Channel 30V TO-92 |
文件: | 总5页 (文件大小:96K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Is Now
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
BF256A
BF256A is a Preferred Device
JFET - General Purpose
N–Channel
N–Channel Junction Field Effect Transistor designed for VHF and
UHF applications.
http://onsemi.com
• Low Cost TO–92 Type Package
• Forward Transfer Admittance, Y = 4.5 mmhos (Min)
1 DRAIN
fs
• Transfer Capacitance – C = 0.7 (Typ)
rss
• Power Gain at f = 800 MHz, Typ. = 11 dB
3
GATE
MAXIMUM RATINGS
2 SOURCE
Rating
Drain–Source Voltage
Drain–Gate Voltage
Symbol
Value
30
Unit
Vdc
V
DS
DG
GS
TO–92
CASE 29
STYLE 5
V
V
30
Vdc
Gate–Source Voltage
Forward Gate Current
Total Device Dissipation
30
Vdc
1
2
I
10
mAdc
G(f)
3
MARKING DIAGRAMS
P
D
@ T = 25°C
360
2.88
mW
mW/°C
A
Derate above 25°C
BF
Operating and Storage Channel
Temperature Range
T
,
–65 to +150
°C
channel
stg
256A
YWW
T
500
400
300
200
Y
WW
= Year
= Work Week
ORDERING INFORMATION
Device
BF256A
Package
Shipping
TO–92
5000 Units/Box
Preferred devices are recommended choices for future use
and best overall value.
100
0
0
25
50
75
100 125
150
175
200
FREE AIR TEMPERATURE (°C)
Figure 1. Power Derating Curve
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
September, 2001 – Rev. 3
BF256A/D
BF256A
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
Gate–Source Voltage
(–I = –1.0 µAdc, V
= 0)
= 15 Vdc, I = 200 µA)
–V
(BR)GSS
30
0.5
—
–
—
Vdc
Vdc
G
DS
(V
DS
–V
GS
—
—
7.5
5.0
D
Gate Reverse Current
(–V
= 20 Vdc, V
= 0)
–I
GSS
nAdc
GS
DS
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current (Note 1.)
(V
= 15 Vdc, V
= 0)
I
3.0
–
7.0
mAdc
DS
GS
DSS
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance
Reverse Transfer Capacitance
Output Capacitance
(V
= 15 Vdc, V
= 0, f = 1 kHz)
|Y |
fs
4.5
–
5.0
0.7
–
–
–
–
mmhos
pF
DS
GS
= 1 Vdc, f = 1 MHz)
(V
DS
= 20 Vdc, –V
C
GS
rss
oss
gfs
(V
= 20 Vdc, V
= 0, f = 1 MHz)
C
–
1.0
pF
DS
GS
= 15 Vdc, V
Cut–Off Frequency (Note 2.)
(V
DS
= 0)
f
–
1000
MHz
GS
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
2. The frequency at which gfs is 0.7 of its value at 1 KHz.
5
4.5
10
9
–V
= 0 V
4
V
= 15 Vdc
8
7
6
5
4
3
2
GS
DS
3.5
3
0.2 V
0.4 V
2.5
2
1.5
1
0.6 V
0.8 V
0.5
0
1
0
BF256A
5
0
10
15
20
= 0
25
0
2
4
6
8
10
12 14 16 18 20
I
, DRAIN CURRENT (mA) @ V
V
, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
DSS
GS
DS
Figure 2. Correlation Between
–V and I
Figure 3. Drain Current versus
Drain–to–Source Voltage
GS(off)
DSS
http://onsemi.com
2
BF256A
10
1
100
10
100
10
100
10
V
V
Y
= 15 Vdc
= 0
= g + j
is bis
V
V
Y
= 15 Vdc
= 0
= g – j
fs bfs
DS
GS
DS
GS
fs
b
is
is
g
fs
–b
fs
1
1
0.1
1
–g
is
0.1
0.1
0.01
0.1
10
100
f, FREQUENCY (MHz)
1000
10
100
f, FREQUENCY (MHz)
1000
Figure 4. Input Admittance versus Frequency
Figure 5. Forward Transfer Admittance versus
Frequency
1
1
10
1
10
1
V
V
Y
= 15 Vdc
= 0
= g + j
os bos
V
V
Y
= 15 Vdc
= 0
= –g – j
rs brs
DS
GS
os
DS
GS
rs
g
os
0.1
0.1
–b
rs
b
os
–g
rs
0.1
0.1
0.01
0.01
0.01
0.01
0.001
0.001
10
100
f, FREQUENCY (MHz)
1000
10
100
1000
f, FREQUENCY (MHz)
Figure 6. Reverse Transfer Admittance
versus Frequency
Figure 7. Output Admittance versus
Frequency
5
4
3
2
1.0
V
= 20 Vdc
DS
f = 1 MHz
0.5
V
= 20 Vdc
DS
f = 1 MHz
1
0
0
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
–V , GATE–SOURCE VOLTAGE (VOLTS)
GS
–V , GATE–SOURCE VOLTAGE (VOLTS)
GS
Figure 8. Input Capacitance versus
Gate–Source Voltage
Figure 9. Reverse Transfer Capacitance
versus Gate–Source Voltage
http://onsemi.com
3
BF256A
PACKAGE DIMENSIONS
TO–92 (TO–226)
CASE 29–11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
P
L
INCHES
DIM MIN MAX
MILLIMETERS
SEATING
PLANE
K
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
---
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
---
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
---
0.205
0.210
0.165
0.021
0.055
0.105
0.020
---
D
X X
G
J
H
V
K
L
---
---
C
N
P
R
V
0.105
0.100
---
2.66
2.54
---
SECTION X–X
0.115
0.135
2.93
3.43
1
N
---
---
N
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
BF256A/D
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