BMS3004-1E [ONSEMI]
P 沟道，功率 MOSFET，-75V，-68A，8.5mΩ;
| 型号： | BMS3004-1E |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，功率 MOSFET，-75V，-68A，8.5mΩ 局域网 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1908B
BMS3004
P-Channel Power MOSFET
http://onsemi.com
–
–
Ω
75V, 68A, 8.5m , TO-220F-3SG
Features
•
ON-resistance R (on)1=6.5m (typ.)
Input capacitance Ciss=13400pF (typ.)
4V drive
Ω
DS
•
•
TO-220F-3SG
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
--75
±20
--68
--272
2.0
DSS
V
V
GSS
I
A
D
Drain Current (Pulse)
I
PW 10 s, duty cycle 1%
A
≤
μ
≤
DP
W
W
Allowable Power Dissipation
P
D
Tc=25 C
40
°
Channel Temperature
Tch
150
C
C
°
°
Storage Temperature
Tstg
--55 to +150
380
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
mJ
A
AS
I
AV
--54
Note : 1 V =--48V, L=100 H, I =--54A (Fig.1)
*
μ
DD
2 L 100 H, Single pulse
AV
*
≤
μ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
=-- 1mA, V =0V
Unit
min
--75
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
V
I
V
μA
μA
V
(BR)DSS
D
GS
I
I
V
V
V
V
=--75V, V =0V
GS
--10
DSS
DS
GS
DS
DS
=±16V, V =0V
DS
±10
GSS
V
(off)
GS
=-- 10V, I =-- 1mA
--1.2
--2.6
D
Forward Transfer Admittance
| yfs |
=-- 10V, I =--34A
120
6.5
S
D
R
R
(on)1
I
I
=--34A, V =-- 10V
GS
8.5
mΩ
mΩ
pF
pF
pF
ns
DS
DS
D
D
Static Drain to Source On-State Resistance
(on)2
=--34A, V =-- 4V
GS
8.3
11.4
Input Capacitance
Ciss
13400
1000
740
70
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--20V, f=1MHz
DS
t
t
t
t
(on)
d
r
245
1400
650
300
30
ns
See Fig.2
Turn-OFF Delay Time
Fall Time
(off)
ns
d
f
ns
Total Gate Charge
Qg
nC
nC
nC
V
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Qgs
Qgd
V
=--48V, V =--10V, I =--68A
GS
DS
D
70
V
I =--68A, V =0V
--0.9
146
470
--1.5
SD
S
GS
t
ns
See Fig.3
rr
I =--68A, V =0V, di/dt=--100A/
s
Q
μ
nC
S
GS
rr
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
Semiconductor Components Industries, LLC, 2013
November, 2013
N0613 TKIM/41112QA TKIM TC-00002740/10511QA TKIM TC-00002547 No. A1908-1/5
BMS3004
I
-- V
I
-- V
D GS
D
DS
--140
--120
--100
--80
--140
--120
--100
--80
Tc=25°C
Single pulse
V
= --10V
DS
Single pulse
--60
--60
--40
--40
--20
0
--20
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
0
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
IT16253
Drain to Source Voltage, V
-- V
IT16252
Gate to Source Voltage, V
-- V
GS
DS
R
(on) -- V
R
(on) -- Tc
DS
DS
GS
20
18
16
14
12
10
8
20
18
16
14
12
10
8
I = --34A
Single pulse
Single pulse
D
6
6
4
4
2
0
2
0
--50
--25
0
25
50
75
100
125
150
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
Gate to Source Voltage, V
-- V
IT16501
Case Temperature, Tc -- °C
IT16255
GS
| yfs | -- I
I
-- V
S SD
D
--1000
1000
7
V
=0V
V
= --10V
7
5
GS
Single pulse
DS
5
3
2
Single pulse
3
2
--100
7
5
3
2
100
7
5
--10
7
5
3
3
2
2
--1.0
7
5
10
7
5
3
2
--0.1
7
3
2
5
3
2
--0.01
1.0
--0.1
2
3
5
7
2
3
5
7
2
3
5
7
--100
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT16257
-- V
--1.4
--1.0
--10
Drain Current, I -- A
IT16256
Diode Forward Voltage, V
SD
D
SW Time -- I
Ciss, Coss, Crss -- V
DS
D
10000
100000
f=1MHz
V
V
= --48V
= --10V
7
5
7
5
DD
GS
3
2
3
2
1000
10000
t
7
5
7
5
f
3
2
3
2
t
r
100
7
5
1000
t (on)
d
7
5
3
2
3
2
10
--0.1
100
2
3
5
7
2
3
5
7
2
3
5
7
0
--5
--10
--15
--20
--25
--30
IT16259
--1.0
--10
--100
Drain Current, I -- A
IT16258
Drain to Source Voltage, V
-- V
D
DS
No. A1908-2/5
BMS3004
V
-- Qg
A S O
GS
--1000
--10
--9
--8
--7
--6
--5
--4
--3
--2
7
V
I
= --48V
DS
= --68A
5
3
2
I
= --272A (PW≤10μs)
DP
D
--100
I
= --68A
D
7
5
3
2
--10
7
5
3
2
Operation in
this area is
limited by R (on).
DS
--1.0
7
5
3
2
Tc=25°C
--1
0
Single pulse
--0.1
--0.1
2
3
5
7
2
3
5
7
2
3
5 7
--100
IT16261
0
0
0
50
100
150
200
250
300
IT16260
--1.0
--10
Drain to Source Voltage, V
-- V
Total Gate Charge, Qg -- nC
DS
P
-- Ta
P
-- Tc
D
D
45
2.5
2.0
1.5
1.0
40
35
30
25
20
15
10
0.5
0
5
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT16249
Case Temperature, Tc -- °C
IT16250
E
-- Ta
AS
120
100
80
60
40
20
0
20
40
60
80
100
120
140
160
IT16251
Ambient Temperature, Ta -- °C
No. A1908-3/5
BMS3004
Package Dimensions
BMS3004-1E
TO-220F-3SG
CASE
ISSUE O
Unit : mm
1: Gate
2: Drain
3: Source
Ordering & Package Information
Marking
Electrical Connection
Device
Package
Shipping
memo
2
TO-220F-3SG
SC-67
50
pcs./tube
BMS3004-1E
Pb-Free
MS3004
1
LOT No.
3
No. A1908-4/5
BMS3004
Fig.1 Unclamped Inductive Switching Test Circuit
Fig.2 Switching Time Test Circuit
V
= -48V
DD
V
IN
D
0V
10V
L
-
≥50Ω
I
=
-
34A
D
RG
G
V
IN
R =1.4Ω
L
D
V
OUT
BMS3004
PW=10μs
D.C.≤1%
0V
10V
S
50Ω
-
G
BMS3004
P. G
50Ω
S
Fig.3 Reverse Recovery Time Test Circuit
D
BMS3004
L
G
V
S
DD
Driver MOSFET
Note on usage : Since the BMS3004 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1908-5/5
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