BSR57 [ONSEMI]

N沟道低频低噪声放大器;
BSR57
型号: BSR57
厂家: ONSEMI    ONSEMI
描述:

N沟道低频低噪声放大器

放大器 开关 光电二极管 晶体管
文件: 总4页 (文件大小:185K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
www.onsemi.com  
N-Channel JFET  
Low-Frequency Low-Noise  
Amplifier  
3
1. Drain  
2. Source  
3. Gate  
1
2
SOT23  
CASE 31808  
STYLE 10  
BSR57  
This device is designed for lowpower chopper or switching  
MARKING DIAGRAM  
application sourced from process 51  
3
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
M5 M G  
Parameter  
DrainGate Voltage  
Symbol  
Value  
40  
Unit  
V
G
V
DGO  
1
2
GateSource Voltage  
Forward Gate Current  
Total Power Dissipation  
V
40  
50  
V
GSO  
M5  
M
G
= Specific Device Code  
= Date Code  
= PbFree Package  
I
mA  
mW  
GF  
P
250  
tot  
(Note: Microdot may be in either location)  
Up to T  
= 40°C  
amb  
Storage Temperature Range  
Junction Temperature  
T
55 to +150  
°C  
°C  
STG  
ORDERING INFORMATION  
T
J
150  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
Device  
Package  
Shipping  
BSR57  
SOT233/5  
(PbFree)  
3000 /  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Symbol  
BV  
Parameter  
GateSource Voltage  
Test Condition  
= 0 V, I = 1.0 mA  
Min.  
40  
Typ.  
Max.  
Units  
V
V
V
V
V
V
V
V
V
GSS  
DS  
GS  
DS  
DS  
GS  
GS  
DS  
DD  
C
I
Gate Reverse Current  
ZeroGate Voltage Drain Current  
GateSource Cutoff Voltage  
DrainSource On Voltage  
DrainSource On Reverse  
Reverse Transfer Capacitance  
Delay Time  
= 20 V, V = 0 V  
1.0  
100  
6.0  
0.5  
40  
nA  
mA  
V
GSS  
DS  
I
= 15 V, V = 0 V  
20  
2.0  
DSS  
GS  
V
V
r
(off)  
(on)  
= 15 V, I = 0.5 nA  
GS  
DS  
D
= 0 V, I = 10 mA  
V
D
(on)  
= 0 V, I = 1 mA  
W
ds  
D
C
= 0 V, V = 10 V  
5.0  
6.0  
4.0  
50  
pF  
ns  
rss  
GS  
t
d
= 10 V, V (on) = 0 V  
GS  
I
= 10 mA, V (off) = 6.0 V  
D
GS  
t
r
Rise Time  
t
off  
Turnoff Time  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
April, 2022 Rev. 3  
BSR57/D  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SOT23 (TO236)  
CASE 318  
ISSUE AT  
DATE 01 MAR 2023  
SCALE 4:1  
GENERIC  
MARKING DIAGRAM*  
XXXMG  
G
1
XXX = Specific Device Code  
M
= Date Code  
G
= PbFree Package  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
STYLES ON PAGE 2  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98ASB42226B  
SOT23 (TO236)  
PAGE 1 OF 2  
onsemi and  
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves  
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation  
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SOT23 (TO236)  
CASE 318  
ISSUE AT  
DATE 01 MAR 2023  
STYLE 1 THRU 5:  
CANCELLED  
STYLE 6:  
STYLE 7:  
PIN 1. EMITTER  
2. BASE  
STYLE 8:  
PIN 1. BASE  
PIN 1. ANODE  
2. EMITTER  
3. COLLECTOR  
2. NO CONNECTION  
3. CATHODE  
3. COLLECTOR  
STYLE 9:  
PIN 1. ANODE  
2. ANODE  
STYLE 10:  
STYLE 11:  
PIN 1. ANODE  
2. CATHODE  
STYLE 12:  
STYLE 13:  
PIN 1. SOURCE  
2. DRAIN  
STYLE 14:  
PIN 1. CATHODE  
2. GATE  
PIN 1. DRAIN  
2. SOURCE  
3. GATE  
PIN 1. CATHODE  
2. CATHODE  
3. ANODE  
3. CATHODE  
3. CATHODEANODE  
3. GATE  
3. ANODE  
STYLE 15:  
STYLE 16:  
STYLE 17:  
PIN 1. NO CONNECTION  
2. ANODE  
STYLE 18:  
STYLE 19:  
STYLE 20:  
PIN 1. CATHODE  
2. ANODE  
PIN 1. GATE  
2. CATHODE  
3. ANODE  
PIN 1. ANODE  
2. CATHODE  
3. CATHODE  
PIN 1. NO CONNECTION PIN 1. CATHODE  
2. CATHODE  
3. ANODE  
2. ANODE  
3. CATHODEANODE  
3. CATHODE  
3. GATE  
STYLE 21:  
STYLE 22:  
STYLE 23:  
PIN 1. ANODE  
2. ANODE  
STYLE 24:  
STYLE 25:  
STYLE 26:  
PIN 1. GATE  
2. SOURCE  
3. DRAIN  
PIN 1. RETURN  
2. OUTPUT  
3. INPUT  
PIN 1. GATE  
2. DRAIN  
PIN 1. ANODE  
2. CATHODE  
3. GATE  
PIN 1. CATHODE  
2. ANODE  
3. SOURCE  
3. NO CONNECTION  
3. CATHODE  
STYLE 27:  
STYLE 28:  
PIN 1. CATHODE  
2. CATHODE  
3. CATHODE  
PIN 1. ANODE  
2. ANODE  
3. ANODE  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98ASB42226B  
SOT23 (TO236)  
PAGE 2 OF 2  
onsemi and  
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves  
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation  
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. onsemi reserves the right to make changes at any time to any  
products or information herein, without notice. The information herein is provided “asis” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products  
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license  
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems  
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should  
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
ADDITIONAL INFORMATION  
TECHNICAL PUBLICATIONS:  
Technical Library: www.onsemi.com/design/resources/technicaldocumentation  
onsemi Website: www.onsemi.com  
ONLINE SUPPORT: www.onsemi.com/support  
For additional information, please contact your local Sales Representative at  
www.onsemi.com/support/sales  

相关型号:

BSR57,215

BSR56; BSR57; BSR58 - N-channel FETs TO-236 3-Pin
NXP

BSR57-T

TRANSISTOR 10 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal
NXP

BSR57-TAPE-13

TRANSISTOR 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal
NXP

BSR57-TAPE-7

TRANSISTOR 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal
NXP

BSR57D87Z

N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB
TI

BSR57L

TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 100MA I(DSS) | SOT-23
ETC

BSR57L99Z

N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB
TI

BSR57LT1

Transistor
MOTOROLA

BSR57S62Z

N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB
TI

BSR57T/R

TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 100MA I(DSS) | TO-236
ETC

BSR57TRL

TRANSISTOR 10 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal
NXP

BSR57TRL13

Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET
YAGEO