BSS138K [ONSEMI]
N 沟道逻辑电平增强型场效应晶体管 50V，0.22A，1.6Ω;
| 型号： | BSS138K |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道逻辑电平增强型场效应晶体管 50V，0.22A，1.6Ω 开关 光电二极管 晶体管 场效应晶体管 |
| 文件： | 总7页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
D
S
N-Channel Logic Level
Enhancement Mode Field
Effect Transistor
G
BSS138K
Features
• Low On−Resistance
D
G
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra−Small Surface Mount Package
• Green Compound
S
SOT−23−3
CASE 318−08
MARKING DIAGRAM
• ESD HBM = 2000 V as per JEDEC A114A;
ESD CDM = 2000 V as per JEDEC C101C
• This Device is Pb−Free and is RoHS Compliant
SKMG
G
ABSOLUTE MAXIMUM RATINGS
(T = 25°C unless otherwise noted) (Note 1)
A
SK
M
G
= Specific Device Code
= Assembly Operation Month
= Pb−Free Package
Symbol
Parameter
Drain−Source Voltage
Value
50
Unit
V
V
DSS
V
GSS
Gate−Source Voltage
12
V
(Note: Microdot may be in either location)
I
Drain Current – Continuous
Drain Current – Pulsed
Total Device Dissipation
0.22
A
D
0.88
ORDERING INFORMATION
P
350
mV
mW/°C
°C
D
†
Device
Package
Shipping
Derating above T = 25°C
2.8
A
BSS138K
SOT−23−3
(Pb−Free)
3000 /
Tape & Reel
T
Operating Junction Temperature Range
Storage Temperature Range
−55 to +150
−55 to +150
J
T
°C
STG
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are limiting values above which the serviceability of any
semiconductor device maybe impaired.
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
Thermal Resistance,
Junction−to−Ambient (Note 2)
350
V
q
JA
2. Device mounted on FR−4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land
pad size.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
March, 2022 − Rev. 2
BSS138K/D
BSS138K
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain–Source Breakdown Voltage
V
I
= 0 V, I = 10 mA
50
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature
Coefficient
= 250 μA, Referenced to 25°C
−
0.11
V/°C
BVDSS
TJ
D
I
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
DS
V
GS
V
GS
V
GS
= 50 V, V = 0 V
−
−
−
−
−
−
−
−
0.1
1
mA
mA
DSS
GSS
GS
I
=
=
=
12 V, V = 0 V
DS
10 V, V = 0 V
0.5
0.05
DS
5 V, V = 0 V
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
I
= V , I = 250 mA
0.6
−
1.2
V
GS(th)
DS
GS D
Gate Threshold Voltage Temperature
Coefficient
= 1 mA, Referenced to 25°C
−
–1.4
−
mV/°C
VGS(th)
TJ
D
R
Static Drain–Source On–Resistance
V
GS
V
GS
V
GS
V
GS
V
DS
= 1.8 V, I = 50 mA
−
−
−
−
−
−
−
2.5
2.0
1.6
−
W
DS(on)
D
= 2.5 V, I = 50 mA
D
= 5 V, I = 50 mA,
−
D
I
On–State Drain Current
= 10 V, V = 5 V
0.2
200
A
D(ON)
DS
g
FS
Forward Transconductance
= 10 V, I = 200 mA
−
mS
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 25 V, V = 0 V,
−
−
−
−
58
9.75
5.2
−
−
−
−
pF
iss
DS
GS
f = 1.0 MHz
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
V
DS
= 5 V, V = 10 mV
281
W
G
GS
SWITCHING CHARACTERISTICS
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
V
= 30 V, I = 0.29 A,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
5
ns
D(ON)
DD
GS
D
= 10 V, R
= 6 W
GEN
t
r
5
t
60
35
2.4
0.5
0.5
D(OFF)
t
f
Q
V
DS
V
GS
= 25 V, I = 0.2 A,
nC
g
D
= 10 V, I = 0.1 mA
G
Q
gs
gd
Q
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain–Source Diode Forward Voltage
= 0 V, I = 115 mA
V
sd
V
GS
−
−
1.2
V
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
BSS138K
TYPICAL CHARACTERISTICS
2.0
2.00
V
GS
= 10 V
5 V
1.75
1.50
1.25
1.00
0.75
4 V
1.5
1.0
6 V
5 V
3 V
4.5 V
4 V
V
GS
= 3 V
2 V
0.5
0.0
10 V
7 V
8 V 9 V
8
0
2
4
6
10
0.0
0.2
0.4
0.6
0.8
1.0
I , Drain−Source Current (A)
D
V
DS
, Drain−Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with Gate
Voltage and Drain Current
2.5
2.0
1.5
1.0
0.5
3
V
= 10 V
= 500 mA
DS
I
D
2.5
2
I
D
= 500 mA
1.5
1
I
D
= 50 mA
0.5
0
6
10
−50
0
50
100
150
2
4
8
V
GS
, Gate−Source Voltage (V)
T , Junction Temperature (°C)
J
Figure 3. On−Resistance Variation
Figure 4. On−Resistance Variation
with Gate−Source Voltage
with Temperature
3.0
2.5
2.0
1.5
1.0
0.5
1.5
1.0
0.5
0.0
V
= V
GS
DS
V
DS
= 10 V
25°C
I
= 1 mA
T = −25°C
J
D
I
D
= 0.25 mA
75°C
125°C
150°C
2.0
2.5
3.0
V
3.5
4.0
4.5
5.0
5.5 6.0
−50
0
50
100
150
T , Junction Temperature (°C)
, Gate−Source Voltage (V)
J
GS
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation
with Temperature
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3
BSS138K
TYPICAL CHARACTERISTICS (continued)
V
GS
= 0 V
100
150°C
25°C
10
1
−55°C
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
, Body Diode Forward Voltage (V)
Figure 7. Reverse Drain Current Variation with
Diode Forward Voltage and Temperature
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
SCALE 4:1
GENERIC
MARKING DIAGRAM*
XXXMG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1. EMITTER
2. BASE
STYLE 8:
PIN 1. BASE
PIN 1. ANODE
2. EMITTER
3. COLLECTOR
2. NO CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
STYLE 10:
STYLE 11:
PIN 1. ANODE
2. CATHODE
STYLE 12:
STYLE 13:
PIN 1. SOURCE
2. DRAIN
STYLE 14:
PIN 1. CATHODE
2. GATE
PIN 1. DRAIN
2. SOURCE
3. GATE
PIN 1. CATHODE
2. CATHODE
3. ANODE
3. CATHODE
3. CATHODE−ANODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. CATHODE
2. ANODE
PIN 1. GATE
2. CATHODE
3. ANODE
PIN 1. ANODE
2. CATHODE
3. CATHODE
PIN 1. NO CONNECTION PIN 1. CATHODE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE−ANODE
3. CATHODE
3. GATE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1. ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1. GATE
2. SOURCE
3. DRAIN
PIN 1. RETURN
2. OUTPUT
3. INPUT
PIN 1. GATE
2. DRAIN
PIN 1. ANODE
2. CATHODE
3. GATE
PIN 1. CATHODE
2. ANODE
3. SOURCE
3. NO CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
PIN 1. ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
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