BSV52LT1 [ONSEMI]

Switching Transistor(NPN Silicon); 开关晶体管（ NPN硅）


型号：	BSV52LT1
厂家：	ONSEMI
描述：	Switching Transistor(NPN Silicon) 开关晶体管（ NPN硅）晶体开关小信号双极晶体管光电二极管
文件：	总4页 (文件大小：72K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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by BSV52LT1/D

SEMICONDUCTOR TECHNICAL DATA

COLLECTOR

NPN Silicon

BASE

EMITTER

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Symbol

Value

Unit

Vdc

CEO

Vdc

CBO

Collector Current — Continuous

THERMAL CHARACTERISTICS

Characteristic

100

mAdc

Symbol

Max

Unit

(1)

Total Device Dissipation FR–5 Board

225

= 25°C

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance Junction to Ambient

Total Device Dissipation

(2)

Alumina Substrate,

= 25°C

Derate above 25°C

2.4

417

mW/°C

°C/W

°C

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

DEVICE MARKING

T , T

J stg

–55 to +150

BSV52LT1 = B2

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Collector–Emitter Breakdown Voltage

(I = 1.0 mAdc)

Vdc

(BR)CEO

—

Collector Cutoff Current

CBO

= 10 Vdc, I = 0)

—

100

5.0

nAdc

µAdc

= 10 Vdc, I = 0, T = 125°C)

1. FR–5 = 1.0

2. Alumina = 0.4

0.75 0.062 in.

0.3 0.024 in. 99.5% alumina.

Thermal Clad is a trademark of the Bergquist Company.

M_Mot_oo_tor_ro_ol_la_a,S_Inm_c.a₁₉ll₉–₆Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS (continued) (T = 25°C unless otherwise noted)

Characteristic

ON CHARACTERISTICS

Symbol

Min

Max

Unit

DC Current Gain

—

(I = 1.0 mAdc, V

= 1.0 Vdc)

—

120

—

(I = 10 mAdc, V

(I = 50 mAdc, V

Collector–Emitter Saturation Voltage

(I = 10 mAdc, I = 300 µAdc)

mVdc

CE(sat)

BE(sat)

—

300

250

400

(I = 10 mAdc, I = 1.0 mAdc)

(I = 50 mAdc, I = 5.0 mAdc)

Base–Emitter Saturation Voltage

(I = 10 mAdc, I = 1.0 mAdc)

700

—

850

1200

(I = 50 mAdc, I = 5.0 mAdc)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

MHz

(I = 10 mAdc, V

= 10 Vdc, f = 100 MHz)

400

—

Output Capacitance

(V = 5.0 Vdc, I = 0, f = 1.0 MHz)

obo

4.0

4.5

Input Capacitance

(V = 1.0 Vdc, I = 0, f = 1.0 MHz)

ibo

—

SWITCHING CHARACTERISTICS

Storage Time

(I = I = I = 10 mAdc)

C B1 B2

—

Turn–On Time

(V = 1.5 Vdc, I = 10 mAdc, I = 3.0 mAdc)

Turn–Off Time

(I = 10 mAdc, I = 3.0 mAdc)

off

Motorola Small–Signal Transistors, FETs and Diodes Device Data

INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total

design. The footprint for the semiconductor packages must

be the correct size to insure proper solder connection

interface between the board and the package. With the

correct pad geometry, the packages will self align when

subjected to a solder reflow process.

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

inches

SOT–23

SOT–23 POWER DISSIPATION

The power dissipation of the SOT–23 is a function of the

SOLDERING PRECAUTIONS

pad size. This can vary from the minimum pad size for

soldering to a pad size given for maximum power dissipation.

Power dissipation for a surface mount device is determined

The melting temperature of solder is higher than the rated

temperature of the device. When the entire device is heated

to a high temperature, failure to complete soldering within a

short time could result in device failure. Therefore, the

following items should always be observed in order to

minimize the thermal stress to which the devices are

subjected.

by T

, the maximum rated junction temperature of the

, the thermal resistance from the device junction to

J(max)

die, R

θJA

ambient, and the operating temperature, T . Using the

values provided on the data sheet for the SOT–23 package,

can be calculated as follows:

•

Always preheat the device.

The delta temperature between the preheat and

soldering should be 100°C or less.*

– T

J(max)

θJA

•

When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering method,

the difference shall be a maximum of 10°C.

The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values into

the equation for an ambient temperature T of 25°C, one can

calculate the power dissipation of the device which in this

case is 225 milliwatts.

•

The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

When shifting from preheating to soldering, the

maximum temperature gradient shall be 5°C or less.

After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.

Gradual cooling should be used as the use of forced

cooling will increase the temperature gradient and result

in latent failure due to mechanical stress.

150°C – 25°C

556°C/W

= 225 milliwatts

The 556°C/W for the SOT–23 package assumes the use

of the recommended footprint on a glass epoxy printed circuit

board to achieve a power dissipation of 225 milliwatts. There

are other alternatives to achieving higher power dissipation

from the SOT–23 package. Another alternative would be to

use a ceramic substrate or an aluminum core board such as

Thermal Clad . Using a board material such as Thermal

Clad, an aluminum core board, the power dissipation can be

doubled using the same footprint.

•

Mechanical stress or shock should not be applied during

cooling.

* Soldering a device without preheating can cause excessive

thermal shock and stress which can result in damage to the

device.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE

MATERIAL.

INCHES

DIM MIN MAX

MILLIMETERS

MIN

2.80

1.20

0.89

0.37

1.78

MAX

3.04

1.40

1.11

0.50

2.04

0.100

0.177

0.60

1.02

2.50

0.60

0.1102 0.1197

0.0472 0.0551

0.0350 0.0440

0.0150 0.0200

0.0701 0.0807

0.0005 0.0040 0.013

0.0034 0.0070 0.085

0.0180 0.0236

0.0350 0.0401

0.0830 0.0984

0.0177 0.0236

0.45

0.89

2.10

0.45

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

CASE 318–08

ISSUE AE

SOT–23 (TO–236AB)

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

andspecificallydisclaimsanyandallliability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in

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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

USA/EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447

6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

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51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BSV52LT1/D

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