BTB12-600CW3G [ONSEMI]
Triacs Silicon Bidirectional Thyristors; 双向晶闸管硅双向晶闸管
| 型号： | BTB12-600CW3G |
| 厂家： | 
ONSEMI |
| 描述： | Triacs Silicon Bidirectional Thyristors |
| 文件： | 总6页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BTB12-600BW3G,
BTB12-800BW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full‐wave ac control applications
where high noise immunity and high commutating di/dt are required.
http://onsemi.com
Features
TRIACS
•ăBlocking Voltage to 800 V
12 AMPERES RMS
600 thru 800 VOLTS
•ăOn‐State Current Rating of 12 Amperes RMS at 25°C
•ăUniform Gate Trigger Currents in Three Quadrants
•ăHigh Immunity to dV/dt - 2000 V/ms minimum at 125°C
•ăMinimizes Snubber Networks for Protection
•ăIndustry Standard TO‐220AB Package
•ăHigh Commutating dI/dt - 4 A/ms minimum at 125°C
•ăThese are Pb-Free Devices
MT2
MT1
G
MARKING
DIAGRAM
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage (Note 1)
(T = -40 to 125°C, Sine Wave,
V
V
RRM
V
DRM,
J
50 to 60 Hz, Gate Open)
BTB12-600BW3G
BTB12-800BW3G
BTB12-xBWG
AYWW
TO-220AB
CASE 221A
STYLE 4
600
800
1
2
3
On‐State RMS Current
(Full Cycle Sine Wave, 60 Hz, T = 80°C)
I
12
A
A
T(RMS)
C
x
= 6 or 8
= Assembly Location
Peak Non‐Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
I
120
TSM
A
Y
= Year
= Work Week
= Pb-Free Package
T
C
= 25°C)
WW
G
2
2
Circuit Fusing Consideration (t = 10 ms)
I t
78
A sec
Non-Repetitive Surge Peak Off-State
Voltage (T = 25°C, t = 10ms)
V
V
V
V
V
DSM/
DSM/ RSM
+100
J
RSM
PIN ASSIGNMENT
Peak Gate Current (T = 125°C, t = 20ms)
I
4.0
A
J
GM
1
2
3
4
Main Terminal 1
Peak Gate Power
(Pulse Width ≤ 1.0 ms, T = 80°C)
P
20
W
GM
C
Main Terminal 2
Gate
Average Gate Power (T = 125°C)
P
G(AV)
1.0
W
°C
°C
J
Operating Junction Temperature Range
Storage Temperature Range
T
-ā40 to +125
-ā40 to +150
J
Main Terminal 2
T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping
1. V
and V
for all types can be applied on a continuous basis. Blocking
DRM
RRM
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
BTB12-600BW3G TO-220AB
(Pb-Free)
50 Units / Rail
BTB12-800BW3G TO-220AB
(Pb-Free)
50 Units / Rail
*For additional information on our Pb-Free strategy and
soldering details, please download the ON Semicon‐
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
©ꢀ Semiconductor Components Industries, LLC, 2008
February, 2008 - Rev. 1
1
Publication Order Number:
BTB12-600BW3/D
BTB12-600BW3G, BTB12-800BW3G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
Junction-to-Case
Junction-to-Ambient
R
2.3
60
°C/W
q
q
JC
R
JA
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
T
L
260
°C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
, V
I
/
mA
DRM
I
RRM
(V = Rated V
D
; Gate Open)
T = 25°C
T = 125°C
J
-
-
-
-
0.005
1.0
DRM
RRM
J
ON CHARACTERISTICS
Peak On‐State Voltage (Note 2)
(I ā17 A Peak)
V
TM
-
-
1.55
V
=
TM
Gate Trigger Current (Continuous dc) (V = 12 V, R = 30 W)
D
I
mA
L
GT
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
2.5
2.5
2.5
-
-
-
50
50
50
Holding Current
(V = 12 V, Gate Open, Initiating Current = 100 mA)
I
-
-
50
mA
mA
H
D
Latching Current (V = 24 V, I = 60 mA)
G
I
D
L
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
-
-
-
-
-
-
70
90
70
Gate Trigger Voltage (V = 12 V, R = 30 W)
L
V
V
V
D
GT
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
0.5
0.5
0.5
-
-
-
1.7
1.1
1.1
Gate Non-Trigger Voltage (T = 125°C)
V
GD
J
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
0.2
0.2
0.2
-
-
-
-
-
-
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, T = 125°C, No Snubber)
(dI/dt)
dI/dt
4.0
-
-
-
-
-
50
-
A/ms
A/ms
V/ms
c
J
Critical Rate of Rise of On-State Current
(T = 125°C, f = 120 Hz, I = 2 x I , tr ≤ 100 ns)
J
G
GT
Critical Rate of Rise of Off‐State Voltage
(V = 0.66 x V
, Exponential Waveform, Gate Open, T = 125°C)
dV/dt
2000
D
DRM
J
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
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2
BTB12-600BW3G, BTB12-800BW3G
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
Parameter
V
TM
V
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
DRM
DRM
on state
I
I
H
I
at V
RRM
V
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
RRM
RRM
RRM
I
V
Maximum On State Voltage
Holding Current
+ Voltage
at V
DRM
off state
TM
I
H
I
DRM
I
H
Quadrant 3
V
TM
MainTerminal 2 -
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
Quadrant I
(-) I
GT
GATE
(+) I
GT
GATE
MT1
MT1
REF
REF
I
-
+ I
GT
GT
(-) MT2
(-) MT2
Quadrant III
Quadrant IV
(+) I
GT
GATE
(-) I
GT
GATE
MT1
REF
MT1
REF
-
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in-phase signals (using standard AC lines) quadrants I and III are used.
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3
BTB12-600BW3G, BTB12-800BW3G
125
110
20
18
DC
180°
120°
120°, 90°, 60°, 30°
16
14
12
10
95
8
90°
180°
60°
6
80
65
30°
4
DC
2
0
0
2
4
6
8
10
12
0
2
4
6
8
10
12
I
, RMS ON‐STATE CURRENT (AMP)
I , AVERAGE ON‐STATE CURRENT (AMP)
T(AV)
T(RMS)
Figure 1. Typical RMS Current Derating
Figure 2. On‐State Power Dissipation
100
1
TYPICAL AT
MAXIMUM @ T = 125°C
J
T = 25°C
J
0.1
10
0.01
4
0.1
1
10
100
t, TIME (ms)
1000
1ā·ā10
Figure 4. Thermal Response
50
45
40
35
30
25
20
15
10
5
MAXIMUM @ T = 25°C
J
1
MTI2 Positive
MTI2 Negative
-40 -25 -10
5
20 35 50 65 80 95 110 125
0.1
0
0.5
1
1.5
2
2.5
3
3.5
4
T , JUNCTION TEMPERATURE (°C)
J
V , INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS)
T
Figure 5. Typical Hold Current Variation
Figure 3. On‐State Characteristics
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4
BTB12-600BW3G, BTB12-800BW3G
100
10
1
2
V
= 12 V
D
R = 30 W
V
= 12 V
D
R = 30 W
1.8
1.6
1.4
1.2
1
L
L
Q3
Q1
Q1
Q2
Q3
0.8
0.6
0.4
Q2
-40 -25 -10
5
20 35 50 65 80 95 110 125
-40 -25 -10
5
20 35 50 65 80 95 110 125
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. Typical Gate Trigger Current Variation
Figure 7. Typical Gate Trigger Voltage Variation
5000
4K
3K
2K
1K
0
V
= 800 Vpk
D
T = 125°C
J
10
100
1000
R , GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
G
Figure 9. Critical Rate of Rise of Off‐State Voltage
(Exponential Waveform)
L
L
1N4007
200 V
RMS
ADJUST FOR
, 60 Hz V
MEASURE
I
I
TM
AC
CHARGE
-
+
TRIGGER
CONTROL
200 V
CHARGE
MT2
1N914
51 W
MT1
NON‐POLAR
G
C
L
Note: Component values are for verification of rated (di/dt) . See AN1048 for additional information.
c
Figure 8. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
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5
BTB12-600BW3G, BTB12-800BW3G
PACKAGE DIMENSIONS
TO-220
CASE 221A-07
ISSUE AA
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
-T-
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
B
F
C
T
S
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.55
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
4
3
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.022
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
Q
A
K
1
2
U
H
G
H
J
Z
K
L
N
Q
R
S
T
R
L
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
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