BUL44AF [ONSEMI]
2A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN;![BUL44AF](http://pdffile.icpdf.com/pdf2/p00246/img/icpdf/BUL44D2AS_1491701_icpdf.jpg)
型号: | BUL44AF |
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描述: | 2A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN 局域网 开关 晶体管 |
文件: | 总8页 (文件大小:180K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BUL44G
SWITCHMODEt NPN
Bipolar Power Transistor
For Switching Power Supply Applications
The BUL44G have an applications specific state−of−the−art die
designed for use in 220 V line operated Switchmode Power supplies
and electronic light ballasts.
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POWER TRANSISTOR
2.0 AMPERES, 700 VOLTS,
40 AND 100 WATTS
Features
• Improved Efficiency Due to Low Base Drive Requirements:
High and Flat DC Current Gain h
Fast Switching
FE
No Coil Required in Base Circuit for Turn−Off (No Current Tail)
• Full Characterization at 125°C
• Tight Parametric Distributions are Consistent Lot−to−Lot
• These Devices are Pb−Free and are RoHS Compliant*
TO−220AB
CASE 221A−09
STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
1
2
3
Collector−Emitter Sustaining Voltage
V
CEO
400
Vdc
Collector−Base Breakdown Voltage
Emitter−Base Voltage
V
700
9.0
Vdc
Vdc
Adc
CES
EBO
V
MARKING DIAGRAM
Collector Current − Continuous
− Peak (Note 1)
I
C
2.0
5.0
I
I
CM
Base Current
− Continuous
− Peak (Note 1)
I
B
1.0
2.0
Adc
BM
BUL44G
AY WW
Total Device Dissipation @ T = 25_C
P
50
0.4
W
W/_C
C
D
Derate above 25°C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
T , T
−65 to 150
_C
J
stg
BUL44 = Device Code
Characteristics
Symbol
Max
Unit
_C/W
_C/W
_C
A
Y
= Assembly Location
= Year
Thermal Resistance, Junction−to−Case
R
q
JC
2.5
WW
G
= Work Week
= Pb−Free Package
Thermal Resistance, Junction−to−Ambient
R
q
JA
62.5
260
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
T
L
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
ORDERING INFORMATION
Device
Package
Shipping
50 Units / Rail
BUL44G
TO−220
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
April, 2010 − Rev. 7
BUL44/D
BUL44G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
V
400
−
−
−
Vdc
mAdc
mAdc
CEO(sus)
(I = 100 mA, L = 25 mH)
C
Collector Cutoff Current
I
−
100
CEO
(V = Rated V
, I = 0)
B
CE
CEO
Collector Cutoff Current (V = Rated V
,
I
−
−
−
−
−
−
100
500
100
CE
CES
CES
V
= 0)
CE
(T = 125°C)
C
(T = 125°C)
C
EB
(V = 500 V, V = 0)
EB
Emitter Cutoff Current
(V = 9.0 Vdc, I = 0)
I
−
−
100
mAdc
EBO
EB
C
ON CHARACTERISTICS
Base−Emitter Saturation Voltage
V
Vdc
Vdc
BE(sat)
(I = 0.4 Adc, I = 40 mAdc)
−
−
0.85
0.92
1.1
C
B
(I = 1.0 Adc, I = 0.2 Adc)
1.25
C
B
Collector−Emitter Saturation Voltage
(I = 0.4 Adc, I = 40 mAdc)
V
CE(sat)
−
−
−
−
0.20
0.20
0.25
0.25
0.5
0.5
0.6
0.6
C
B
(T = 125°C)
C
(I = 1.0 Adc, I = 0.2 Adc)
C
B
(T = 125°C)
C
DC Current Gain
h
FE
−
(I = 0.2 Adc, V = 5.0 Vdc)
14
−
12
12
8.0
7.0
10
−
34
−
C
CE
(T = 125°C)
32
20
20
14
13
22
C
(I = 0.4 Adc, V = 1.0 Vdc)
C
−
CE
(T = 125°C)
C
−
(I = 1.0 Adc, V = 1.0 Vdc)
C
−
CE
(T = 125°C)
C
−
(I = 10 mAdc, V = 5.0 Vdc)
C
−
CE
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
f
−
−
−
13
38
−
MHz
pF
T
(I = 0.5 Adc, V = 10 Vdc, f = 1.0 MHz)
C
CE
Output Capacitance
C
OB
60
(V = 10 Vdc, I = 0, f = 1.0 MHz)
CB
E
Input Capacitance
C
380
600
pF
IB
(V = 8.0 V)
EB
−
−
2.5
2.7
−
−
1.0 ms
3.0 ms
1.0 ms
3.0 ms
(I = 0.4 Adc
(T = 125°C)
C
C
I
= 40 mAdc
B1
CC
Dynamic Saturation Voltage:
Determined 1.0 ms and
−
−
1.3
1.15
−
−
V
= 300 V)
(T = 125°C)
C
3.0 ms respectively after
V
Vdc
CE(dsat)
−
−
3.2
7.5
−
−
rising I reaches 90%
B1
(I = 1.0 Adc
(T = 125°C)
C
C
B1
of final I
B1
I
= 0.2 Adc
−
−
1.25
1.6
−
−
V
CC
= 300 V)
(T = 125°C)
C
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2
BUL44G
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 ms)
Turn−On Time
Turn−Off Time
Turn−On Time
Turn−Off Time
(I = 0.4 Adc, I = 40 mAdc
t
on
t
off
t
on
t
off
−
−
40
40
100
ns
ms
ns
ms
C
B1
I
= 0.2 Adc, V = 300 V)
(T = 125°C)
−
B2
CC
C
(I = 0.4 Adc, I = 40 mAdc
−
−
1.5
2.0
2.5
−
C
B2
B1
CC
I
= 0.2 Adc, V = 300 V)
(T = 125°C)
C
(I = 1.0 Adc, I = 0.2 Adc
−
−
85
85
150
−
C
B1
B1
CC
I
= 0.5 Adc, V = 300 V)
(T = 125°C)
C
(I = 1.0 Adc, I = 0.2 Adc
−
−
1.75
2.10
2.5
−
C
B2
B1
CC
I
= 0.5 Adc, V = 300 V)
(T = 125°C)
C
SWITCHING CHARACTERISTICS: Inductive Load (V
= 300 V, V = 15 V, L = 200 mH)
CC
clamp
Fall Time
(I = 0.4 Adc, I = 40 mAdc
B2
t
fi
−
−
125
120
200
ns
ms
ns
ns
ms
ns
ns
ms
ns
C
B1
I
= 0.2 Adc)
(T = 125°C)
C
−
Storage Time
Crossover Time
Fall Time
t
si
−
−
0.7
0.8
1.25
−
(T = 125°C)
C
t
−
−
110
110
200
−
c
fi
(T = 125°C)
C
(I = 1.0 Adc, I = 0.2 Adc
t
−
−
110
120
175
−
C
B2
B1
I
= 0.5 Adc)
(T = 125°C)
C
Storage Time
Crossover Time
Fall Time
t
si
−
−
1.7
2.25
2.75
−
(T = 125°C)
C
t
c
−
−
180
210
300
−
(T = 125°C)
C
(I = 0.8 Adc, I = 160 mAdc
t
fi
70
−
−
180
170
−
C
B2
B1
I
= 160 mAdc)
(T = 125°C)
C
Storage Time
Crossover Time
t
si
2.6
−
−
4.2
3.8
−
(T = 125°C)
C
t
c
−
−
190
350
300
−
(T = 125°C)
C
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3
BUL44G
TYPICAL STATIC CHARACTERISTICS
100
100
V
CE
= 1 V
V
CE
= 5 V
T = 125°C
J
T = 125°C
J
T = 25°C
J
T = 25°C
J
T = -ꢀ20°C
J
10
10
1.0
1.0
0.01
0.1
1.0
10
0.01
0.1
1.0
10
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 1. DC Current Gain at 1 Volt
Figure 2. DC Current Gain at 5 Volts
2.0
10
T = 25°C
J
I /I = 10
C B
1.0
I /I = 5
C B
1.0
0.1
2 A
1.5 A
1 A
T = 25°C
J
0.4 A
T = 125°C
J
I = 0.2 A
C
0
1.0
0.01
0.01
10
100
1000
0.1
1.0
10
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (AMPS)
C
Figure 3. Collector Saturation Region
Figure 4. Collector−Emitter Saturation Voltage
1000
100
10
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
T = 25°C
C
IB
J
f = 1 MHz
C
OB
T = 25°C
J
T = 125°C
J
I /I = 5
C B
I /I = 10
C B
1.0
10
1.0
10
100
0.01
0.1
1.0
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
I , COLLECTOR CURRENT (AMPS)
C
Figure 5. Base−Emitter Saturation Region
Figure 6. Capacitance
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4
BUL44G
TYPICAL SWITCHING CHARACTERISTICS
(I = I /2 for all switching)
B2
C
300
250
200
150
100
50
6.0
5.0
4.0
3.0
2.0
1.0
0
I
= I
B(off) C/2
= 300 V
I
= I
B(off) C/2
= 300 V
V
V
CC
I /I = 5
C B
CC
PW = 20 ms
PW = 20 ms
I /I = 10
C B
T = 25°C
J
T = 125°C
J
I /I = 5
C B
T = 25°C
J
T = 125°C
J
I /I = 10
C B
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 7. Resistive Switching, ton
Figure 8. Resistive Switching, toff
2500
2.0
1.5
T = 25°C
T = 125°C
J
I
= I
B(off) C/2
= 15 V
I
= I
B(off) C/2
= 15 V
J
I /I = 5
C B
V
V
CC
CC
2000
1500
1000
V = 300 V
Z
V = 300 V
Z
L = 200 mH
C
L = 200 mH
C
I = 1 A
C
1.0
500
0
T = 25°C
T = 125°C
J
J
I = 0.4 A
C
I /I = 10
C B
0.5
0.4
0.8
1.2
1.6
2.0
2.4
5.0 6.0 7.0 8.0 9.0
10
11
12
13
14
15
I , COLLECTOR CURRENT (AMPS)
C
h , FORCED GAIN
FE
Figure 9. Inductive Storage Time, tsi
Figure 10. Inductive Storage Time
250
200
150
100
200
150
100
50
I
= I
B(off) C/2
= 15 V
V
CC
V = 300 V
Z
t
c
L = 200 mH
C
t
c
t
fi
t
fi
I
= I
B(off) C/2
= 15 V
V
CC
50
0
V = 300 V
Z
T = 25°C
T = 125°C
J
T = 25°C
T = 125°C
J
J
L = 200 mH
C
J
0.4
0.8
1.2
1.6
2.0
2.4
0.4
0.8
1.2
1.6
2.0
2.4
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 11. Inductive Switching,
tand tI/I= 5
Figure 12. Inductive Switching,
tand tI/I= 10
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5
BUL44G
TYPICAL SWITCHING CHARACTERISTICS
(I = I /2 for all switching)
B2
C
190
170
150
130
110
170
160
150
I
= I
B(off) C/2
= 15 V
I
= I
B(off) C/2
= 15 V
I = 1 A
C
V
V
CC
CC
V = 300 V
Z
V = 300 V
Z
L = 200 mH
C
L = 200 mH
C
140
130
120
I = 0.4 A
C
I = 0.4 A
C
110
100
90
70
I = 1 A
C
T = 25°C
T = 125°C
J
J
T = 25°C
T = 125°C
J
J
90
80
50
5.0 6.0 7.0 8.0 9.0
10
11
12
13
14
15
5.0 6.0 7.0
8.0 9.0
10
11
12
13
14 15
h
FE
, FORCED GAIN
h
FE
, FORCED GAIN
Figure 14. Inductive Crossover Time
Figure 13. Inductive Fall Time
GUARANTEED SAFE OPERATING AREA INFORMATION
2.5
2.0
1.5
1.0
0.5
0
10
1.0
10ꢂms
1ꢂms
T
≤ 125°C
C
1ꢂms
DC (BUL44)
5ꢂms
GAIN ≥ 4
L = 500 mH
C
50ꢂms
Extended
SOA
-5 V
0.1
-1.5 V
0 V
0.01
10
100
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0
100
200
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
300
400
500
600
700
1000
V
CE
Figure 15. Forward Bias Safe Operating Area
Figure 16. Reverse Bias Switching Safe Operating Area
1.0
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of figure 15 is
SECOND BREAK-
DOWN DERATING
0.8
0.6
0.4
based on T = 25°C; T
is variable depending on power
level. Second breakdown pulse limits are valid for duty cycles
C
J(PK)
to 10% but must be derated when T > 25°C. Second
C
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on figure
15 may be found at any case temperature by using the
THERMAL DERATING
appropriate curve on figure 17. T
may be calculated from
J(PK)
0.2
0
the data in figure 20. At any case temperatures, thermal
limitations will reduce the power than can be handled to
values less than the limitations imposed by second
breakdown. For inductive loads, high voltage and current
must be sustained simultaneously during turn−off with the
base−to−emitter junction reverse−biased. The safe level is
specified as a reverse−biased safe operating area (Figure 16).
This rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode.
20
40
60
80
100
120
140
16
T , CASE TEMPERATURE (°C)
C
Figure 17. Forward Bias Power Derating
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I −V
C
CE
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6
BUL44G
10
5
4
V
CE
90% I
I
C
C
9
8
7
6
5
t
fi
3
dyn 1 ms
t
si
2
dyn 3 ms
1
t
c
10% I
C
V
10% V
CLAMP
0
CLAMP
-1
-2
-3
-4
-5
4
3
2
1
0
90% I
B
I
B
90% I 1
B
1 ms
3 ms
I
B
0
1
2
3
4
5
6
7
8
TIME
TIME
Figure 18. Dynamic Saturation Voltage Measurements
Figure 19. Inductive Switching Measurements
+15 V
I PEAK
C
100 mF
1 mF
MTP8P10
MUR105
MJE210
100 W
3 W
150 W
3 W
V
CE
PEAK
V
CE
MTP8P10
MPF930
R
R
B1
I 1
B
I
MPF930
+10 V
out
I
B
A
I 2
B
50 W
B2
V(BR)CEO(sus)
L = 10 mH
INDUCTIVE SWITCHING
L = 200 mH
RB2 = 0
RBSOA
COMMON
MTP12N10
150 W
3 W
L = 500 mH
RB2 = 0
RB2 = ∞
500 mF
V
= 20 VOLTS
I (pk) = 100 mA
V
CC
= 15 VOLTS
V
CC
= 15 VOLTS
CC
RB1 SELECTED FOR
DESIRED I 1
RB1 SELECTED
FOR DESIRED I 1
C
1 mF
B
B
-V
off
Table 1. Inductive Load Switching Drive Circuit
TYPICAL THERMAL RESPONSE
1.0
0.5
0.2
0.01
0.01
0.1
0.05
R
= r(t) R
q
JC
q
JC(t)
P
(pk)
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
0.02
t
1
1
SINGLE PULSE
T
- T = P
C
R
q
(pk) JC1
(t)
t
2
J(pk)
DUTY CYCLE, D = t /t
1 2
0.01
0.01
0.1
1.0
10
100
1000
t, TIME (ms)
Figure 20. Typical Thermal Response (ZqJC(t)) for BUL44
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7
BUL44G
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
S
B
F
T
INCHES
DIM MIN MAX
MILLIMETERS
4
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
4.09
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.161
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
A
K
Q
Z
1
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
J
V
G
U
V
Z
D
0.080
2.04
N
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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