BUL45D2G_技术文档

BUL45D2G

High Speed, High Gain

Bipolar NPN Power

Transistor

with Integrated Collector−Emitter Diode

and Built−in Efficient Antisaturation

Network

The BUL45D2G is state−of−art High Speed High gain BiPolar

transistor (H2BIP). High dynamic characteristics and lot−to−lot

minimum spread ( 150 ns on storage time) make it ideally suitable for

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POWER TRANSISTOR

5.0 AMPERES,

700 VOLTS, 75 WATTS

light ballast applications. Therefore, there is no need to guarantee an h

FE

window. It’s characteristics make it also suitable for PFC application.

Features

• Low Base Drive Requirement

• High Peak DC Current Gain (55 Typical) @ I = 100 mA

C

• Extremely Low Storage Time Min/Max Guarantees Due to

the H2BIP Structure which Minimizes the Spread

• Integrated Collector−Emitter Free Wheeling Diode

• Fully Characterized and Guaranteed Dynamic V

CE(sat)

• “6 Sigma” Process Providing Tight and Reproductible

Parameter Spreads

TO−220AB

CASE 221A−09

STYLE 1

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating

Symbol

Value

400

700

12

Unit

Vdc

Adc

1

2

3

Collector−Emitter Sustaining Voltage

Collector−Base Breakdown Voltage

Collector−Emitter Breakdown Voltage

Emitter−Base Voltage

V

CEO

V

CBO

V

CES

MARKING DIAGRAM

EBO

Collector Current − Continuous

− Peak (Note 1)

I

5

10

C

I

CM

Base Current

− Continuous

− Peak (Note 1)

I

2

4

Adc

B

I

BM

BUL45D2G

AY WW

Total Device Dissipation @ T = 25_C

P

75

W

C

D

Derate above 25°C

0.6

W/_C

Operating and Storage Temperature

T , T

J

−65 to 150

_C

stg

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

1.65

62.5

260

Unit

_C/W

_C

A

Y

= Assembly Location

= Year

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

R

q

JC

R

q

JA

WW

G

= Work Week

= Pb−Free Package

Maximum Lead Temperature for Soldering

Purposes 1/8″ from Case for 5 Seconds

T

L

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

ORDERING INFORMATION

Device

Package

Shipping

50 Units / Rail

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

BUL45D2G

TO−220

(Pb−Free)

©

Semiconductor Components Industries, LLC, 2010

1

Publication Order Number:

April, 2010 − Rev. 5

BUL45D2/D

BUL45D2G

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

C

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(I = 100 mA, L = 25 mH)

C

V

400

700

12

450

910

14.1

Vdc

CEO(sus)

Collector−Base Breakdown Voltage

V

CBO

EBO

CEO

(I

CBO

= 1 mA)

Emitter−Base Breakdown Voltage

(I = 1 mA)

Vdc

EBO

Collector Cutoff Current

(V = Rated V , I = 0)

I

100

mAdc

CE

CEO

B

Collector Cutoff Current (V = Rated V

, V = 0)

@ T = 25°C

I

100

500

100

CE

CES EB

C

CES

@ T = 125°C

C

Collector Cutoff Current (V = 500 V, V = 0)

@ T = 125°C

CE

EB

C

Emitter−Cutoff Current

(V = 10 Vdc, I = 0)

I

100

mAdc

EBO

EB

C

ON CHARACTERISTICS

Base−Emitter Saturation Voltage

(I = 0.8 Adc, I = 80 mAdc)

V

Vdc

BE(sat)

@ T = 25°C

0.8

0.7

1

0.9

C

B

C

@ T = 125°C

C

(I = 2 Adc, I = 0.4 Adc)

@ T = 25°C

0.89

0.79

1

0.9

C

B

C

@ T = 125°C

C

Collector−Emitter Saturation Voltage

(I = 0.8 Adc, I = 80 mAdc)

Vdc

CE(sat)

@ T = 25°C

0.28

0.32

0.4

0.5

C

B

C

@ T = 125°C

C

(I = 2 Adc, I = 0.4 Adc)

@ T = 25°C

0.32

0.38

0.5

0.6

C

B

C

@ T = 125°C

C

(I = 0.8 Adc, I = 40 mAdc)

@ T = 25°C

0.46

0.62

0.75

1

C

B

C

@ T = 125°C

C

DC Current Gain

(I = 0.8 Adc, V = 1 Vdc)

C

h

FE

—

@ T = 25°C

22

20

34

29

CE

C

@ T = 125°C

C

(I = 2 Adc, V = 1 Vdc)

@ T = 25°C

10

7

14

9.5

C

CE

C

@ T = 125°C

C

DIODE CHARACTERISTICS

Forward Diode Voltage

V

EC

V

(I = 1 Adc)

@ T = 25°C

1.04

0.7

1.5

1.6

1.2

EC

C

@ T = 125°C

C

(I = 2 Adc)

EC

@ T = 25°C

1.2

C

@ T = 125°C

C

(I = 0.4 Adc)

EC

@ T = 25°C

0.85

0.62

C

@ T = 125°C

C

Forward Recovery Time (see Figure 27)

T

330

ns

fr

(I = 1 Adc, di/dt = 10 A/ms)

F

@ T = 25°C

C

(I = 2 Adc, di/dt = 10 A/ms)

@ T = 25°C

360

320

F

C

(I = 0.4 Adc, di/dt = 10 A/ms)

F

@ T = 25°C

C

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BUL45D2G

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

C

Characteristic

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

Symbol

Min

Typ

Max

Unit

f

T

13

50

MHz

pF

(I = 0.5 Adc, V = 10 Vdc, f = 1 MHz)

C

CE

Output Capacitance

C

ob

75

(V = 10 Vdc, I = 0, f = 1 MHz)

CB

E

Input Capacitance

C

ib

340

500

pF

(V = 8 Vdc)

EB

DYNAMIC SATURATION VOLTAGE

V

3.7

9.4

V

@ 1 ms

@ 3 ms

@ 1 ms

@ 3 ms

@ T = 25°C

C

CE(dsat)

I

= 1 A

= 100 mA

= 300 V

@ T = 125°C

C

I

V

B1

Dynamic Saturation

Voltage:

@ T = 25°C

0.35

2.7

C

CC

@ T = 125°C

C

Determined 1 ms and

3 ms respectively after

@ T = 25°C

3.9

12

C

rising I reaches

B1

I

C

= 2 A

= 0.8 A

= 300 V

@ T = 125°C

C

90% of final I

B1

I

B1

@ T = 25°C

0.4

1.5

C

V

CC

@ T = 125°C

C

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 ms)

Turn−on Time

Turn−off Time

Turn−on Time

Turn−off Time

@ T = 25°C

t

90

105

150

1.3

150

2.4

ns

ms

ns

ms

C

on

I

= 2 Adc, I = 0.4 Adc

B1

@ T = 125°C

C

I

B2

= 1 Adc

@ T = 25°C

t

1.15

1.5

C

off

V

CC

= 300 Vdc

@ T = 125°C

C

@ T = 25°C

t

on

90

110

C

I

= 2 Adc, I = 0.4 Adc

@ T = 125°C

B1

C

I

= 0.4 Adc

= 300 Vdc

B2

@ T = 25°C

t

2.1

C

off

V

CC

@ T = 125°C

3.1

C

SWITCHING CHARACTERISTICS: Inductive Load (V

= 300 V, V = 15 V, L = 200 mH)

CC

clamp

Fall Time

@ T = 25°C

t

90

93

150

0.9

ns

ms

ns

ms

ns

C

f

@ T = 125°C

C

I

= 1 Adc

= 100 mAdc

= 500 mAdc

C

Storage Time

Crossover Time

Fall Time

@ T = 25°C

t

0.72

1.05

C

s

I

B1

B2

@ T = 125°C

C

@ T = 25°C

95

150

2.25

300

C

c

@ T = 125°C

C

@ T = 25°C

t

f

80

105

C

@ T = 125°C

C

I

C

= 2 Adc

= 0.4 Adc

Storage Time

Crossover Time

@ T = 25°C

t

s

t

c

1.95

C

I

B1

B2

@ T = 125°C

2.9

C

@ T = 25°C

225

450

C

@ T = 125°C

C

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BUL45D2G

TYPICAL STATIC CHARACTERISTICS

100

80

60

40

20

0

100

V

CE

= 1 V

V

CE

= 5 V

T = 125°C

J

80

60

40

20

0

J

T = 25°C

J

T = 25°C

J

T = -ꢀ20°C

J

T = -ꢀ20°C

J

0.001

0.01

0.1

1

10

0.001

0.01

0.1

1

10

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 1. DC Current Gain @ 1 Volt

Figure 2. DC Current Gain @ 5 Volt

4

3

2

10

T = 25°C

J

I /I = 5

C B

T = 25°C

J

1

T = 125°C

J

5 A

3 A

1

0

2 A

4 A

T = -ꢀ20°C

J

1 A

I = 500 mA

C

0.1

0.001

0.01

0.1

I , BASE CURRENT (AMPS)

1

0.01

0.1

1

I , COLLECTOR CURRENT (AMPS)

C

B

Figure 3. Collector Saturation Region

Figure 4. Collector−Emitter Saturation Voltage

10

I /I = 10

C B

I /I = 20

C B

1

T = 125°C

J

T = 25°C

J

T = -ꢀ20°C

J

T = 125°C

J

T = 25°C

J

0.1

0.001

0.1

0.001

0.01

0.1

1

0.01

0.1

1

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 5. Collector−Emitter Saturation Voltage

Figure 6. Collector−Emitter Saturation Voltage

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BUL45D2G

TYPICAL STATIC CHARACTERISTICS

10

I /I = 5

C B

I /I = 10

C B

T = 25°C

J

T = -ꢀ20°C

J

1

T = -ꢀ20°C

J

T = 125°C

J

T = 125°C

J

T = 25°C

J

0.1

0.001

0.01

0.1

1

10

0.001

0.01

0.1

1

10

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 7. Base−Emitter Saturation Region

Figure 8. Base−Emitter Saturation Region

10

I /I = 20

C B

25°C

1

T = -ꢀ20°C

J

125°C

T = 125°C

J

T = 25°C

J

0.1

0.001

0.01

0.1

1

10

0.01

0.1

1

10

I , COLLECTOR CURRENT (AMPS)

C

REVERSE EMITTER-COLLECTOR CURRENT (AMPS)

Figure 9. Base−Emitter Saturation Region

Figure 10. Forward Diode Voltage

1000

100

1000

900

800

700

600

T = 25°C

(test)

T = 25°C

J

C (pF)

ib

BVCER @ 10 mA

f

= 1 MHz

C

ob

(pF)

10

1

BVCER(sus) @ 200 mA

500

400

1

10

100

10

100

(W)

1000

V , REVERSE VOLTAGE (VOLTS)

R

BE

Figure 11. Capacitance

Figure 12. BVCER = f(ICER)

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BUL45D2G

TYPICAL SWITCHING CHARACTERISTICS

5

1000

800

600

400

I = I

Bon Boff

I

= I

T = 125°C

T = 25°C

J

Bon Boff

J

V

CC

= 300 V

V

= 300 V

I /I = 10

C B

CC

4

3

2

PW = 20 ms

I /I = 10

C B

I /I = 5

C B

I /I = 5

C B

1

0

T = 125°C

T = 25°C

J

200

0

0.5

1

1.5

2

2.5

3

3.5

4

0.5

1

1.5

2

2.5

3

3.5

4

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 14. Resistive Switch Time, t_off

Figure 13. Resistive Switch Time, t_on

5

4

3

2

4

3

2

I

= I

Bon Boff

= 15 V

I

= I

Bon Boff

= 15 V

I /I = 5

C B

V

CC

V

CC

V = 300 V

Z

V = 300 V

Z

L = 200 mH

C

L = 200 mH

C

1

0

1

0

T = 125°C

J

T = 125°C

J

T = 25°C

J

T = 25°C

J

0

1

2

3

4

0

1

2

3

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 16. Inductive Storage Time,

Figure 15. Inductive Storage Time,

t

_si@ I_C/I_B= 10

t

_si@ I_C/I_B= 5

600

500

400

300

200

400

300

200

I

= I

Bon Boff

= 15 V

T = 125°C

J

I

= I

Boff Bon

= 15 V

V

CC

T = 25°C

J

V

CC

V = 300 V

Z

V = 300 V

Z

t

c

L = 200 mH

C

L = 200 mH

C

100

0

100

0

T = 125°C

J

T = 25°C

J

t

fi

0

1

2

3

0

1

2

3

4

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 17. Inductive Switching,

t_c& t_fi@ I_C/I_B= 5

Figure 18. Inductive Switching,

t_fi@ I_C/I_B= 10

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BUL45D2G

TYPICAL SWITCHING CHARACTERISTICS

1500

1000

5

I

= I

Bon Boff

= 15 V

T = 125°C

T = 25°C

J

I

= I

Boff Bon

= 15 V

T = 125°C

T = 25°C

J

V

CC

V

CC

V = 300 V

Z

V = 300 V

Z

I = 1 A

C

L = 200 mH

C

L = 200 mH

C

4

3

500

I = 2 A

C

0

2

0

1

2

3

4

0

5

10

15

20

I , COLLECTOR CURRENT (AMPS)

C

h

FE

, FORCED GAIN

Figure 19. Inductive Switching,

t_c@ I_C/I_B= 10

Figure 20. Inductive Storage Time

450

350

250

1400

1200

1000

800

I

= I

Boff Bon

= 15 V

T = 125°C

T = 25°C

J

I

= I

Bon Boff

= 15 V

T = 125°C

T = 25°C

J

V

CC

V

CC

V = 300 V

Z

V = 300 V

Z

I = 1 A

C

L = 200 mH

C

L = 200 mH

C

I = 2 A

C

600

400

150

50

200

0

I = 2 A

C

I = 1 A

C

2

4

6

8

10

12

14

16

18

20

2

4

6

8

10

h , FORCED GAIN

FE

12

14

16

18

20

h

FE

, FORCED GAIN

Figure 21. Inductive Fall Time

Figure 22. Inductive Crossover Time

3000

2000

360

340

I = I

B1 B2

I

= I

Bon Boff

= 15 V

V

dI/dt = 10 A/ms

T = 25°C

CC

V = 300 V

Z

C

L = 200 mH

C

I = 50 mA

B

I = 100 mA

B

1000

320

300

I = 200 mA

B

I = 500 mA

B

I = 1 A

B

0

0.5

1

1.5

2

2.5

3

3.5

4

0

0.5

1

1.5

2

I , COLLECTOR CURRENT (AMPS)

C

I , FORWARD CURRENT (AMP)

F

Figure 23. Inductive Storage Time, t_si

Figure 24. Forward Recovery Time t_fr

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BUL45D2G

TYPICAL SWITCHING CHARACTERISTICS

10

V

CE

9

I

C

90% I

C

dyn 1 ms

8

7

6

t

fi

t

si

dyn 3 ms

10% I

C

0 V

V

10% V

clamp

5

4

3

2

t

c

90% I

B

I

B

90% I

B1

1 ms

I

B

1

0

3 ms

0

1

2

3

4

5

6

8

7

TIME

Figure 25. Dynamic Saturation

Voltage Measurements

Figure 26. Inductive Switching Measurements

V

FRM

V

(1.1 V unless

F

otherwise specified)

FR

V

F

V

F

t

fr

0.1 V

F

0

I

F

10% I

F

0

2

4

6

8

10

Figure 27. t_frMeasurements

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BUL45D2G

TYPICAL SWITCHING CHARACTERISTICS

Table 1. Inductive Load Switching Drive Circuit

+15 V

I PEAK

C

100 mF

1 mF

100 W

3 W

MTP8P10

150 W

3 W

V

CE

PEAK

V

CE

MTP8P10

R

B1

MPF930

I 1

B

MUR105

MJE210

MPF930

I

+10 V

out

I

B

A

I 2

B

50

R

B2

W

COMMON

MTP12N10

150 W

3 W

V

(BR)CEO(sus)

L = 10 mH

Inductive Switching

RBSOA

L = 500 mH

L = 200 mH

R

500 mF

R

= ∞

= 20 Volts

= 100 mA

= 0

= 15 Volts

selected for

R

= 0

= 15 Volts

selected for

B2

CC

B2

V

CC

1 mF

I

R

B1

desired I

R

B1

C(pk)

-V

off

desired I

B1

TYPICAL CHARACTERISTICS

100

6

T

≤ 125°C

C

5

GAIN ≥ 5

L = 2 mH

1 ms

10

1

C

10 ms

1 ms

4

3

2

5 ms

DC

-5 V

0.1

1

0

0 V

-1.5 V

600

0.01

10

100

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1000

200

300

400

500

700

800

V

CE

V , COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

Figure 28. Forward Bias Safe Operating Area

Figure 29. Reverse Bias Safe Operating Area

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BUL45D2G

TYPICAL CHARACTERISTICS

1

0.8

0.6

SECOND BREAKDOWN

DERATING

THERMAL DERATING

0.4

0.2

0

20

40

60

80

100

120

140

160

T , CASE TEMPERATURE (°C)

C

Figure 30. Forward Bias Power Derating

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

Figure 28 may be found at any case temperature by using the

appropriate curve on Figure 30.

breakdown. Safe operating area curves indicate I −V

T

may be calculated from the data in Figure 31. At any

C

CE

J(pk)

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate. The data of Figure 28 is

case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations

imposed by second breakdown. For inductive loads, high

voltage and current must be sustained simultaneously during

turn−off with the base to emitter junction reverse biased. The

safe level is specified as a reverse biased safe operating area

(Figure 29). This rating is verified under clamped conditions

so that the device is never subjected to an avalanche mode.

based on T = 25°C; T

is variable depending on power

level. Second breakdown pulse limits are valid for duty

C

J(pk)

cycles to 10% but must be derated when T > 25°C. Second

C

breakdown limitations do not derate the same as thermal

limitations. Allowable current at the voltages shown on

TYPICAL THERMAL RESPONSE

1

0.5

0.2

0.1

P

(pk)

R

(t) = r(t) R

q

JC

q

JC

0.1

0.05

= 2.5°C/W MAX

q

JC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t

0.02

t

1

t

2

SINGLE PULSE

T

- T = P

C

R (t)

q

JC

J(pk)

(pk)

DUTY CYCLE, D = t /t

1 2

0.01

0.1

1

10

100

1000

t, TIME (ms)

Figure 31. Typical Thermal Response (Z_q_JC(t)) for BUL45D2

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BUL45D2G

PACKAGE DIMENSIONS

TO−220AB

CASE 221A−09

ISSUE AF

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

SEATING

PLANE

−T−

C

S

B

F

T

INCHES

DIM MIN MAX

MILLIMETERS

4

MIN

14.48

9.66

4.07

0.64

3.61

2.42

2.80

0.36

12.70

1.15

4.83

2.54

2.04

1.15

5.97

0.00

1.15

---

MAX

15.75

10.28

4.82

0.88

4.09

2.66

3.93

0.64

14.27

1.52

5.33

3.04

2.79

1.39

6.47

1.27

---

A

B

C

D

F

G

H

J

0.570

0.380

0.160

0.025

0.142

0.095

0.110

0.014

0.500

0.045

0.190

0.100

0.080

0.045

0.235

0.000

0.045

---

0.620

0.405

0.190

0.035

0.161

0.105

0.155

0.025

0.562

0.060

0.210

0.120

0.110

0.055

0.255

0.050

---

A

K

Q

Z

1

2

3

U

H

K

L

N

Q

R

S

T

U

V

Z

L

R

J

V

G

D

0.080

2.04

N

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

BUL45D2/D

http://onsemi.com

11


型号：	BUL45D2G
厂家：	ONSEMI
描述：	High Speed, High Gain Bipolar NPN Power Transistor 高速，高增益双极NPN功率晶体管晶体晶体管功率双极晶体管开关局域网
文件：	总11页 (文件大小：227K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BUL45D2G [ONSEMI]

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