BZX84C10LT3G [ONSEMI]
10V, 0.225W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB, LEAD FREE, PLASTIC PACKAGE-3;型号: | BZX84C10LT3G |
厂家: | ONSEMI |
描述: | 10V, 0.225W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB, LEAD FREE, PLASTIC PACKAGE-3 |
文件: | 总7页 (文件大小:178K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BZX84BxxxLT1,
BZX84CxxxLT1 Series,
SZBZX84BxxxLT1G,
SZBZX84CxxxLT1G Series
Zener Voltage Regulators
http://onsemi.com
225 mW SOT−23 Surface Mount
3
1
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Cathode
Anode
MARKING DIAGRAM
3
SOT−23
CASE 318
STYLE 8
xxx M G
G
1
Features
2
1
• 225 mW Rating on FR−4 or FR−5 Board
• Zener Breakdown Voltage Range − 2.4 V to 75 V
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• ESD Rating of Class 3 (>16 kV) per Human Body Model
• Tight Tolerance Series Available (See Page 4)
• AEC−Q101 Qualified and PPAP Capable
xxx
M
G
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
BZX84CxxxLT1
SOT−23 3000/Tape & Reel
• Pb−Free Packages are Available
BZX84CxxxLT1G
SOT−23 3000/Tape & Reel
(Pb−Free)
Mechanical Characteristics
SZBZX84xxxLT1G
BZX84CxxxLT3
SOT−23 3000/Tape & Reel
(Pb−Free)
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
SOT−23
10,000/Tape &
Reel
BZX84CxxxLT3G
SOT−23
(Pb−Free)
10,000/Tape &
Reel
SZBZXCxxxLT3G
SOT−23
(Pb−Free)
10,000/Tape &
Reel
MAXIMUM RATINGS
BZX84BxxxLT1
SOT−23 3000/Tape & Reel
Rating
Symbol
Max
Unit
BZX84BxxxLT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel
Total Power Dissipation on FR−5 Board,
(Note 1) @ T = 25°C
Derated above 25°C
P
D
225
1.8
556
mW
mW/°C
°C/W
A
SZBZX84BxxxLT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
Thermal Resistance, Junction−to−Ambient
R
q
JA
BZX84BxxxLT3
SOT−23
10,000 / Tape &
Reel
Total Power Dissipation on Alumina
P
D
Substrate, (Note 2) @ T = 25°C
300
2.4
417
mW
mW/°C
°C/W
A
BZX84BxxxLT3G
SOT−23
(Pb−Free)
10,000/Tape &
Reel
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Junction and Storage Temperature Range
T , T
−65 to
+150
°C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 X 0.75 X 0.62 in.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
November, 2011 − Rev. 14
BZX84C2V4LT1/D
BZX84BxxxLT1, BZX84CxxxLT1 Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series
ELECTRICAL CHARACTERISTICS
I
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C
A
I
F
unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)
F
F
Symbol
Parameter
V
Reverse Zener Voltage @ I
Reverse Current
Z
ZT
I
ZT
V
Z
V
R
V
I
Z
ZT
Maximum Zener Impedance @ I
V
F
R
ZT
ZT
I
I
Reverse Leakage Current @ V
Reverse Voltage
R
R
V
R
I
F
Forward Current
V
F
Forward Voltage @ I
F
QV
Maximum Temperature Coefficient of V
Z
Z
Zener Voltage Regulator
C
Max. Capacitance @ V = 0 and f = 1 MHz
R
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2
BZX84BxxxLT1, BZX84CxxxLT1 Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series
ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)
A
F
F
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
V
@ I
(Volts)
V
(V)
= 1 mA
V
(V)
Max Reverse
Leakage
Current
q
VZ
Z1
Z2
Z3
= 5 mA
@ I
@ I = 20 mA
(mV/k)
@ I = 5 mA
ZT1
ZT1
ZT2
(Note 3)
ZT3
Z
(W)
@ I
5 mA
Z
(W)
@ I
1 mA
Z
ZT3
(W)
@ I =
ZT3
(Note 3)
ZT1
ZT2
(Note 3)
C (pF)
I
V
R
Volts
Device
=
=
@ V = 0
R
ZT1
ZT2
R
@
Min
Nom
2.4
2.7
3
Max
2.6
Min
1.7
Max
2.1
2.4
2.7
2.9
3.3
3.5
4
Min
Max
3.2
Min
Max
0
mA
Device*
Marking
f = 1 MHz
20 mA
SZ/BZX84C2V4LT1, G
SZ/BZX84C2V7LT1, G
SZ/BZX84C3V0LT1, G
SZ/BZX84C3V3LT1, G
SZ/BZX84C3V6LT1, G
SZ/BZX84C3V9LT1, G
SZ/BZX84C4V3LT1, G
SZ/BZX84C4V7LT1/T3, G
SZ/BZX84C5V1LT1/T3, G
SZ/BZX84C5V6LT1/T3, G
SZ/BZX84C6V2LT1/T3, G
SZ/BZX84C6V8LT1/T3, G
SZ/BZX84C7V5LT1, G
SZ/BZX84C8V2LT1, G
SZ/BZX84C9V1LT1/T3, G
SZ/BZX84C10LT1, G
SZ/BZX84C11LT1, G
SZ/BZX84C12LT1, G
SZ/BZX84C13LT1, G
SZ/BZX84C15LT1/T3, G
SZ/BZX84C16LT1, G
SZ/BZX84C18LT1/T3, G
SZ/BZX84C20LT1, G
SZ/BZX84C22LT1, G
SZ/BZX84C24LT1, G
Z11
Z12
Z13
Z14
Z15
Z16
W9
Z1
2.2
2.5
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
600
600
600
600
600
600
600
500
480
400
150
80
2.6
3
50
50
1
1
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
450
2.9
1.9
3.6
50
50
40
40
30
30
15
15
10
6
20
10
5
0
450
450
450
450
450
450
260
225
200
185
155
140
135
130
130
130
130
120
110
105
100
85
2.8
3.2
2.1
3.3
3.6
3.9
4.1
4.4
4.5
5
3.9
1
0
3.1
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
3.5
2.3
4.2
1
0
3.4
3.8
2.7
4.5
5
1
0
3.7
4.1
2.9
4.7
3
1
−2.5
0
4
4.6
3.3
5.1
3
1
4.4
5
3.7
4.7
5.3
6
5.4
3
2
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
Z2
4.8
5.4
4.2
5.9
2
2
Z3
5.2
6
4.8
5.2
5.8
6.4
7
6.3
1
2
Z4
5.8
6.6
5.6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14
6.8
3
4
Z5
6.4
7.2
6.3
7.4
6
2
4
1.2
Z6
7
7.9
6.9
80
8
6
1
5
2.5
Z7
7.7
8.7
7.6
80
7.7
8.5
9.4
10.4
11.4
12.5
13.9
15.4
16.9
18.9
20.9
22.9
8.8
6
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
5
3.2
Z8
8.5
9.6
8.4
100
150
150
150
170
200
200
225
225
250
250
9.7
8
6
3.8
Z9
9.4
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
9.3
10.7
11.8
12.9
14.2
15.7
17.2
19.2
21.4
23.4
25.7
10
10
10
15
20
20
20
20
25
25
7
4.5
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
11
10.2
11.2
12.3
13.7
15.2
16.7
18.7
20.7
22.7
8
5.4
12
8
6.0
13
8
7.0
15
15.5
17
10.5
11.2
12.6
14
15.4
16.8
9.2
16
10.4
12.4
14.4
16.4
18.4
18
19
20
21.1
23.2
25.5
22
85
24
80
V
Below
= 0.1 m-
A
Max Reverse
Leakage
Current
q
VZ
(mV/k) Below
Z2
V
Below
= 2 mA
@ I
ZT2
V Below
Z3
Z1
Z
Z
Z
@ I
ZT1
@ I
ZT3
= 10 mA
ZT1
ZT2
ZT3
@ I
= 2 mA
ZT1
Below
Below
Below
C (pF)
I
V
R
Device
Marking
@ I
ZT1
=
@ I
0.5 mA
=
@ I
10 mA
=
@ V = 0
R
ZT4
ZT3
R
@
Min
Nom
Max
28.9
32
Min
Max
28.9
32
Min
Max
29.3
32.4
35.4
38.4
41.5
46.5
50.5
54.6
60.8
67
(V)
18.9
21
Min
Max
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
mA
Device
2 mA
f = 1 MHz
SZ/BZX84C27LT1, G
SZ/BZX84C30LT1, G
SZ/BZX84C33LT1/T3, G
SZ/BZX84C36LT1, G
SZ/BZX84C39LT1, G
SZ/BZX84C43LT1, G
SZ/BZX84C47LT1, G
SZ/BZX84C51LT1, G
SZ/BZX84C56LT1, G
SZ/BZX84C62LT1, G
SZ/BZX84C68LT1, G
SZ/BZX84C75LT1, G
Y10
Y11
Y12
Y13
Y14
Y15
Y16
Y17
Y18
Y19
Y20
Y21
25.1
28
31
34
37
40
44
48
52
58
64
70
27
30
33
36
39
43
47
51
56
62
68
75
80
80
25
300
300
325
350
350
375
375
400
425
450
475
500
25.2
28.1
31.1
34.1
37.1
40.1
44.1
48.1
52.1
58.2
64.2
70.3
45
50
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
52.2
58.8
65.6
73.4
70
27.8
30.8
33.8
36.7
39.7
43.7
47.6
51.5
57.4
63.4
69.4
70
70
70
45
40
40
40
40
35
35
35
35
80
35
55
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
38
90
38
60
41
130
150
170
180
200
215
240
255
41
70
46
46
80
50
50
90
54
54
100
110
120
130
140
60
60
66
66
72
72
73.2
80.2
79
79
3. Zener voltage is measured with a pulse test current I at an ambient temperature of 25°C.
Z
* The “G” suffix indicates Pb−Free package available.
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3
BZX84BxxxLT1, BZX84CxxxLT1 Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series
ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)
A
F
F
Max Reverse
Leakage
Current
Z
ZT
(W) @
q
VZ
(mV/k)
@ I = 5 mA
I
ZT
= 5 mA
V
Z
(Volts) @ I
= 5 mA
ZT
C (pF)
I
V
R
(Note 4)
Max
80
(Note 4)
Nom
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
12
R
ZT
@ V =0,
Device
Marking
@
R
Min
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
11.8
14.7
15.7
17.6
21.6
23.5
Max
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
12.2
15.3
16.3
18.4
22.4
24.5
mA
Volts
2
Min
Max
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7
f = 1 MHz
260
225
200
185
155
140
135
130
130
110
Device
BZX84B4V7LT1, G
T10
T11
T12
T13
T14
T15
T16
T17
T18
T22
T19
T20
T24
T25
3
2
1
3
2
1
−3.5
−2.7
−2
SZ/BZX84B5V1LT1, G
SZ/BZX84B5V6LT1, G
SZ/BZX84B6V2LT1, G
SZ/BZX84B6V8LT1, G
SZ/BZX84B7V5LT1, G
BZX84B8V2LT1, G
BZX84B9V1LT1, G
SZ/BZX84B12LT1, G
BZX84B15LT1, G
60
2
40
2
10
4
0.4
15
4
1.2
15
5
2.5
15
0.7
0.5
5
3.2
15
6
3.8
25
0.1
8
6
10
15
30
0.05
0.05
0.05
0.05
0.05
10.5
11.2
12.6
15.4
16.8
9.2
13
SZ/BZX84B16LT1, G
BZX84B18LT1, G
16
40
10.4
12.4
16.4
18.4
14
105
100
85
18
45
16
BZX84B22LT1, G
22
55
20
BZX84B24LT1, G
24
70
22
80
4. Zener voltage is measured with a pulse test current I at an ambient temperature of 25°C.
Z
*The “G” suffix indicates Pb−Free package available.
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4
BZX84BxxxLT1, BZX84CxxxLT1 Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series
TYPICAL CHARACTERISTICS
8
7
6
5
4
3
100
10
1
TYPICAL T VALUES
C
TYPICAL T VALUES
C
V @ I
Z
ZT
V @ I
Z
ZT
2
1
0
-1
-ꢀ2
-ꢀ3
2
3
4
5
6
7
8
9
10
11
12
10
100
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 1. Temperature Coefficients
Figure 2. Temperature Coefficients
(Temperature Range −55°C to +150°C)
(Temperature Range −55°C to +150°C)
1000
100
10
1
1000
100
10
T = 25°C
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
J
I
Z(AC)
f = 1 kHz
= 0.1 I
Z(DC)
I = 1 mA
Z
5 mA
20 mA
75°C 25°C
0.6 0.7
0°C
150°C
0.5
1
0.4
1
10
V , NOMINAL ZENER VOLTAGE
100
0.8
0.9
1.0
1.1
1.2
V , FORWARD VOLTAGE (V)
F
Z
Figure 3. Effect of Zener Voltage on
Zener Impedance
Figure 4. Typical Forward Voltage
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5
BZX84BxxxLT1, BZX84CxxxLT1 Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series
TYPICAL CHARACTERISTICS
1000
100
1000
T = 25°C
A
100
10
0 V BIAS
1 V BIAS
1
+150°C
BIAS AT
50% OF V NOM
0.1
0.01
Z
10
1
+ꢀ25°C
-ꢀ55°C
0.001
0.0001
0.00001
1
10
100
0
10
20
30
40
50
60
70
80
90
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 5. Typical Capacitance
Figure 6. Typical Leakage Current
100
10
100
10
T = 25°C
A
T = 25°C
A
1
1
0.1
0.01
0.1
0.01
10
30
50
70
90
0
2
4
6
8
10
12
V , ZENER VOLTAGE (V)
Z
V , ZENER VOLTAGE (V)
Z
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
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BZX84BxxxLT1, BZX84CxxxLT1 Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
SEE VIEW C
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
3
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
H
E
MILLIMETERS
INCHES
E
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
−−−
MAX
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
10°
c
1
2
b
0.25
e
q
H
A
E
q
L
STYLE 8:
A1
PIN 1. ANODE
L1
VIEW C
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 421 33 790 2910
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