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BZX84C3V3LT1G [ONSEMI]

Zener Voltage Regulators; 齐纳稳压器
BZX84C3V3LT1G
型号： BZX84C3V3LT1G
厂家： ONSEMI    ONSEMI
描述：

Zener Voltage Regulators
齐纳稳压器

稳压器 二极管 齐纳二极管 测试 光电二极管
文件： 总8页 (文件大小：84K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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BZX84B4V7LT1,  
BZX84C2V4LT1 Series  
Zener Voltage Regulators  
225 mW SOT−23 Surface Mount  
This series of Zener diodes is offered in the convenient, surface  
mount plastic SOT−23 package. These devices are designed to provide  
voltage regulation with minimum space requirement. They are well  
suited for applications such as cellular phones, hand held portables,  
and high density PC boards.  
http://onsemi.com  
3
1
Cathode  
Anode  
Features  
• Pb−Free Packages are Available  
• 225 mW Rating on FR−4 or FR−5 Board  
• Zener Breakdown Voltage Range − 2.4 V to 75 V  
• Package Designed for Optimal Automated Board Assembly  
• Small Package Size for High Density Applications  
• ESD Rating of Class 3 (>16 KV) per Human Body Model  
• Tight Tolerance Series Available (See Page 4)  
3
SOT−23  
CASE 318  
STYLE 8  
1
2
MARKING DIAGRAM  
Mechanical Characteristics  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily Solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
xxxM  
POLARITY: Cathode indicated by polarity band  
FLAMMABILITY RATING: UL 94 V−0  
xxx = Specific Device Code  
M
=Month Code  
ORDERING INFORMATION  
MAXIMUM RATINGS  
†
Rating  
Symbol  
Max  
Unit  
Device*  
Package  
Shipping  
Total Power Dissipation on FR−5 Board,  
P
BZX84CxxxLT1  
SOT−23  
3000/Tape & Reel  
3000/Tape & Reel  
D
(Note 1) @ T = 25°C  
225  
1.8  
556  
mW  
mW/°C  
°C/W  
A
BZX84CxxxLT1G SOT−23  
(Pb−Free)  
Derated above 25°C  
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
BZX84CxxxLT3  
BZX84BxxxLT1  
SOT−23 10,000/Tape & Reel  
Total Power Dissipation on Alumina  
P
D
SOT−23  
3000/Tape & Reel  
3000/Tape & Reel  
Substrate, (Note 2) @ T = 25°C  
300  
2.4  
417  
mW  
mW/°C  
°C/W  
A
Derated above 25°C  
Thermal Resistance, Junction−to−Ambient  
BZX84BxxxLT1G SOT−23  
(Pb−Free)  
R
q
JA  
Junction and Storage  
Temperature Range  
T , T  
−65 to  
+150  
°C  
BZX84BxxxLT3  
SOT−23 10,000/Tape & Reel  
J
stg  
*The “T1” suffix refers to an 8 mm, 7 inch reel.  
The “T3” suffix refers to an 8 mm, 13 inch reel.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
1. FR−5 = 1.0 X 0.75 X 0.62 in.  
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 3 of  
this data sheet.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
December, 2004 − Rev. 8  
BZX84C2V4LT1/D  
 
BZX84B4V7LT1, BZX84C2V4LT1 Series  
ELECTRICAL CHARACTERISTICS  
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C  
I
A
I
F
unless otherwise noted, V = 0.95 V Max. @ I = 10 mA)  
F
F
Symbol  
Parameter  
V
Reverse Zener Voltage @ I  
Reverse Current  
Z
ZT  
I
ZT  
V
Z
V
R
V
I
Z
ZT  
Maximum Zener Impedance @ I  
V
F
R
ZT  
ZT  
I
I
Reverse Leakage Current @ V  
Reverse Voltage  
R
R
V
R
I
F
Forward Current  
V
F
Forward Voltage @ I  
F
QV  
Maximum Temperature Coefficient of V  
Z
Z
Zener Voltage Regulator  
C
Max. Capacitance @ V = 0 and f = 1 MHz  
R
http://onsemi.com  
2
BZX84B4V7LT1, BZX84C2V4LT1 Series  
ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)  
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)  
A
F
F
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)  
V
@ I  
(Volts)  
V
(V)  
= 1 mA  
V
(V)  
= 20 mA  
Max Reverse  
Leakage  
Current  
q
VZ  
Z1  
Z2  
Z3  
= 5 mA  
@ I  
@ I  
(mV/k)  
@ I = 5 mA  
ZT1  
ZT1  
ZT2  
(Note 3)  
ZT3  
(Note 3)  
Z
(W)  
@ I  
5 mA  
Z
(W)  
@ I  
1 mA  
Z
ZT3  
(W)  
@ I =  
ZT3  
(Note 3)  
ZT1  
ZT2  
C (pF)  
I
V
R
Volts  
Device  
=
=
@ V = 0  
R
R
ZT1  
ZT2  
@
Min  
Nom  
2.4  
2.7  
3
Max  
2.6  
Min  
1.7  
Max  
2.1  
2.4  
2.7  
2.9  
3.3  
3.5  
4
Min  
Max  
3.2  
mA  
Min  
Max  
0
Device  
Marking  
20 mA  
f = 1 MHz  
BZX84C2V4LT1, G*  
BZX84C2V7LT1, G*  
BZX84C3V0LT1  
BZX84C3V3LT1, G*  
BZX84C3V6LT1, G*  
BZX84C3V9LT1, G*  
BZX84C4V3LT1, G*  
BZX84C4V7LT1  
BZX84C5V1LT1  
BZX84C5V6LT1  
BZX84C6V2LT1  
BZX84C6V8LT1  
BZX84C7V5LT1  
BZX84C8V2LT1  
BZX84C9V1LT1  
BZX84C10LT1, G*  
BZX84C11LT1, G*  
BZX84C12LT1, G*  
BZX84C13LT1, G*  
BZX84C15LT1  
Z11  
Z12  
Z13  
Z14  
Z15  
Z16  
W9  
Z1  
2.2  
2.5  
100  
100  
95  
95  
90  
90  
90  
80  
60  
40  
10  
15  
15  
15  
15  
20  
20  
25  
30  
30  
40  
45  
55  
55  
70  
600  
600  
600  
600  
600  
600  
600  
500  
480  
400  
150  
80  
2.6  
3
50  
50  
1
1
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−2.7  
−2.0  
0.4  
450  
2.9  
1.9  
3.6  
50  
50  
40  
40  
30  
30  
15  
15  
10  
6
20  
10  
5
0
450  
450  
450  
450  
450  
450  
260  
225  
200  
185  
155  
140  
135  
130  
130  
130  
130  
120  
110  
105  
100  
85  
2.8  
3.2  
2.1  
3.3  
3.6  
3.9  
4.1  
4.4  
4.5  
5
3.9  
1
0
3.1  
3.3  
3.6  
3.9  
4.3  
4.7  
5.1  
5.6  
6.2  
6.8  
7.5  
8.2  
9.1  
10  
3.5  
2.3  
4.2  
1
0
3.4  
3.8  
2.7  
4.5  
5
1
0
3.7  
4.1  
2.9  
4.7  
3
1
−2.5  
0
4
4.6  
3.3  
5.1  
3
1
4.4  
5
3.7  
4.7  
5.3  
6
5.4  
3
2
0.2  
1.2  
2.5  
3.7  
4.5  
5.3  
6.2  
7.0  
8.0  
9.0  
10.0  
11.0  
13.0  
14.0  
16.0  
18.0  
20.0  
22.0  
Z2  
4.8  
5.4  
4.2  
5.9  
2
2
Z3  
5.2  
6
4.8  
5.2  
5.8  
6.4  
7
6.3  
1
2
Z4  
5.8  
6.6  
5.6  
6.6  
7.2  
7.9  
8.7  
9.6  
10.6  
11.6  
12.7  
14  
6.8  
3
4
Z5  
6.4  
7.2  
6.3  
7.4  
6
2
4
1.2  
Z6  
7
7.9  
6.9  
80  
8
6
1
5
2.5  
Z7  
7.7  
8.7  
7.6  
80  
7.7  
8.5  
9.4  
10.4  
11.4  
12.5  
13.9  
15.4  
16.9  
18.9  
20.9  
22.9  
8.8  
6
0.7  
0.5  
0.2  
0.1  
0.1  
0.1  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
5
3.2  
Z8  
8.5  
9.6  
8.4  
100  
150  
150  
150  
170  
200  
200  
225  
225  
250  
250  
9.7  
8
6
3.8  
Z9  
9.4  
10.6  
11.6  
12.7  
14.1  
15.8  
17.1  
19.1  
21.2  
23.3  
25.6  
9.3  
10.7  
11.8  
12.9  
14.2  
15.7  
17.2  
19.2  
21.4  
23.4  
25.7  
10  
10  
10  
15  
20  
20  
20  
20  
25  
25  
7
4.5  
Y1  
Y2  
Y3  
Y4  
Y5  
Y6  
Y7  
Y8  
Y9  
10.4  
11.4  
12.4  
14.3  
15.3  
16.8  
18.8  
20.8  
22.8  
11  
10.2  
11.2  
12.3  
13.7  
15.2  
16.7  
18.7  
20.7  
22.7  
8
5.4  
12  
8
6.0  
13  
8
7.0  
15  
15.5  
17  
10.5  
11.2  
12.6  
14  
15.4  
16.8  
9.2  
BZX84C16LT1, G*  
BZX84C18LT1  
16  
10.4  
12.4  
14.4  
16.4  
18.4  
18  
19  
BZX84C20LT1, G*  
BZX84C22LT1, G*  
BZX84C24LT1  
20  
21.1  
23.2  
25.5  
22  
85  
24  
80  
V
Below  
= 0.1 m  
A
Max Reverse  
Leakage  
Current  
q
VZ  
(mV/k) Below  
@ I = 2 mA  
ZT1  
Z2  
V
Below  
= 2 mA  
@ I  
ZT2  
V Below  
Z3  
Z1  
Z
Z
Z
@ I  
ZT1  
@ I  
ZT3  
= 10 mA  
ZT1  
ZT2  
ZT3  
Below  
Below  
Below  
C (pF)  
I
V
R
Device  
Marking  
@ I  
2 mA  
=
@ I  
0.5 mA  
=
@ I  
10 mA  
=
@ V = 0  
R
f = 1 MHz  
R
ZT1  
ZT4  
ZT3  
@
Min  
Nom  
Max  
28.9  
32  
Min  
Max  
28.9  
32  
Min  
Max  
29.3  
32.4  
35.4  
38.4  
41.5  
46.5  
50.5  
54.6  
60.8  
67  
mA  
(V)  
18.9  
21  
Min  
Max  
25.3  
29.4  
33.4  
37.4  
41.2  
46.6  
51.8  
57.2  
63.8  
71.6  
79.8  
88.6  
Device  
BZX84C27LT1, G*  
Y10  
Y11  
Y12  
Y13  
Y14  
Y15  
Y16  
Y17  
Y18  
Y19  
Y20  
Y21  
25.1  
28  
31  
34  
37  
40  
44  
48  
52  
58  
64  
70  
27  
30  
33  
36  
39  
43  
47  
51  
56  
62  
68  
75  
80  
80  
25  
300  
300  
325  
350  
350  
375  
375  
400  
425  
450  
475  
500  
25.2  
28.1  
31.1  
34.1  
37.1  
40.1  
44.1  
48.1  
52.1  
58.2  
64.2  
70.3  
45  
50  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
21.4  
24.4  
27.4  
30.4  
33.4  
37.6  
42.0  
46.6  
52.2  
58.8  
65.6  
73.4  
70  
BZX84C30LT1  
27.8  
30.8  
33.8  
36.7  
39.7  
43.7  
47.6  
51.5  
57.4  
63.4  
69.4  
70  
70  
70  
45  
40  
40  
40  
40  
35  
35  
35  
BZX84C33LT1, G*  
BZX84C36LT1  
35  
80  
35  
55  
23.1  
25.2  
27.3  
30.1  
32.9  
35.7  
39.2  
43.4  
47.6  
52.5  
38  
90  
38  
60  
BZX84C39LT1, G*  
BZX84C43LT1, G*  
BZX84C47LT1, G*  
BZX84C51LT1  
41  
130  
150  
170  
180  
200  
215  
240  
255  
41  
70  
46  
46  
80  
50  
50  
90  
54  
54  
100  
110  
120  
130  
140  
BZX84C56LT1, G*  
BZX84C62LT1  
60  
60  
66  
66  
BZX84C68LT1, G*  
BZX84C75LT1, G*  
72  
72  
73.2  
80.2  
79  
79  
3. Zener voltage is measured with a pulse test current I at an ambient temperature of 25°C.  
Z
* The “G” suffix indicates Pb−Free package available.  
http://onsemi.com  
3
 
BZX84B4V7LT1, BZX84C2V4LT1 Series  
ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)  
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)  
A
F
F
Max Reverse  
Leakage  
Z
ZT  
(W) @  
q
Current  
VZ  
I
ZT  
= 5 mA  
V
(Volts) @ I  
= 5 mA  
(mV/k)  
@ I = 5 mA  
Z
ZT  
C (pF)  
I
V
R
(Note 4)  
Max  
80  
(Note 4)  
Nom  
4.7  
R
ZT  
@ V =0,  
Device  
@
R
Min  
4.61  
5.00  
5.49  
6.08  
6.66  
7.35  
8.04  
8.92  
15.7  
17.6  
Max  
4.79  
5.20  
5.71  
6.32  
6.94  
7.65  
8.36  
9.28  
16.3  
18.4  
mA  
Volts  
Min  
Max  
0.2  
1.2  
2.5  
3.7  
4.5  
5.3  
6.2  
7
f = 1 MHz  
260  
Marking  
Device  
BZX84B4V7LT1  
T10  
T11  
T12  
T13  
T14  
T15  
T16  
T17  
T19  
T20  
3
2
1
3
2
1
2
2
−3.5  
−2.7  
−2  
BZX84B5V1LT1, G*  
BZX84B5V6LT1  
5.1  
60  
225  
5.6  
40  
2
200  
BZX84B6V2LT1, G*  
BZX84B6V8LT1, G*  
BZX84B7V5LT1, G*  
BZX84B8V2LT1, G*  
BZX84B9V1LT1, G*  
BZX84B16LT1  
6.2  
10  
4
0.4  
185  
6.8  
15  
4
1.2  
155  
7.5  
15  
5
2.5  
140  
8.2  
15  
0.7  
0.5  
5
3.2  
135  
9.1  
15  
6
3.8  
130  
16  
40  
0.05  
0.05  
11.2  
12.6  
10.4  
12.4  
14  
105  
BZX84B18LT1  
18  
45  
16  
100  
4. Zener voltage is measured with a pulse test current I at an ambient temperature of 25°C.  
Z
* The “G” suffix indicates Pb−Free package available.  
http://onsemi.com  
4
 
−
                
1
−
                
2
3
BZX84B4V7LT1, BZX84C2V4LT1 Series  
TYPICAL CHARACTERISTICS  
8
7
6
5
4
3
100  
TYPICAL T VALUES  
C
TYPICAL T VALUES  
C
V @ I  
Z
ZT  
V @ I  
Z
ZT  
10  
2
1
0
−1  
2
3
4
5
6
7
8
9
10  
11  
12  
10  
100  
V , NOMINAL ZENER VOLTAGE (V)  
Z
V , NOMINAL ZENER VOLTAGE (V)  
Z
Figure 1. Temperature Coefficients  
Figure 2. Temperature Coefficients  
(Temperature Range −55°C to +150°C)  
(Temperature Range −55°C to +150°C)  
1000  
100  
10  
1
1000  
100  
10  
T = 25°C  
I = 0.1 I  
Z(AC)  
f = 1 kHz  
75 V (MMBZ5267BLT1)  
91 V (MMBZ5270BLT1)  
J
Z(DC)  
I = 1 mA  
Z
5 mA  
20 mA  
75°C 25°C  
0.6 0.7  
0°C  
150°C  
0.5  
1
0.4  
1
10  
V , NOMINAL ZENER VOLTAGE  
100  
0.8  
0.9  
1.0  
1.1  
1.2  
V , FORWARD VOLTAGE (V)  
F
Z
Figure 3. Effect of Zener Voltage on  
Zener Impedance  
Figure 4. Typical Forward Voltage  
http://onsemi.com  
5
BZX84B4V7LT1, BZX84C2V4LT1 Series  
TYPICAL CHARACTERISTICS  
1000  
100  
1000  
T = 25°C  
A
100  
10  
0 V BIAS  
1 V BIAS  
1
+150°C  
BIAS AT  
50% OF V NOM  
0.1  
0.01  
Z
10  
1
+ꢀ25°C  
−ꢀ55°C  
0.001  
0.0001  
0.00001  
1
10  
100  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
V , NOMINAL ZENER VOLTAGE (V)  
Z
V , NOMINAL ZENER VOLTAGE (V)  
Z
Figure 5. Typical Capacitance  
Figure 6. Typical Leakage Current  
100  
10  
100  
10  
T = 25°C  
A
T = 25°C  
A
1
1
0.1  
0.01  
0.1  
0.01  
10  
30  
50  
70  
90  
0
2
4
6
8
10  
12  
V , ZENER VOLTAGE (V)  
Z
V , ZENER VOLTAGE (V)  
Z
Figure 8. Zener Voltage versus Zener Current  
(12 V to 91 V)  
Figure 7. Zener Voltage versus Zener Current  
(VZ Up to 12 V)  
http://onsemi.com  
6
BZX84B4V7LT1, BZX84C2V4LT1 Series  
PACKAGE DIMENSIONS  
SOT−23  
TO−236AB  
CASE 318−09  
ISSUE AK  
NOTES:  
A
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
L
2. CONTROLLING DIMENSION: INCH.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH THICKNESS. MINIMUM LEAD  
THICKNESS IS THE MINIMUM THICKNESS OF  
BASE MATERIAL.  
3
S
C
B
1
2
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW  
STANDARD 318−08.  
V
G
INCHES  
MIN  
MILLIMETERS  
DIM  
A
B
C
D
G
H
J
MAX  
0.1197  
0.0551  
0.0440  
0.0200  
0.0807  
0.0040  
0.0070  
0.0285  
0.0401  
0.1039  
0.0236  
MIN  
2.80  
1.20  
0.89  
0.37  
1.78  
0.013  
0.085  
0.35  
0.89  
2.10  
0.45  
MAX  
3.04  
1.40  
1.11  
0.50  
2.04  
0.100  
0.177  
0.69  
1.02  
2.64  
0.60  
0.1102  
0.0472  
0.0350  
0.0150  
0.0701  
0.0005  
0.0034  
0.0140  
0.0350  
0.0830  
0.0177  
H
J
D
K
K
L
S
V
SOLDERING FOOTPRINT*  
0.95  
0.037  
0.95  
0.037  
2.0  
0.079  
0.9  
0.035  
0.8  
0.031  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
7
BZX84B4V7LT1, BZX84C2V4LT1 Series  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA  
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada  
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
BZX84C2V4LT1/D  

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