BZX84C75LT3G [ONSEMI]

75V, 0.225W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB, LEAD FREE, PLASTIC PACKAGE-3;
BZX84C75LT3G
型号: BZX84C75LT3G
厂家: ONSEMI    ONSEMI
描述:

75V, 0.225W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB, LEAD FREE, PLASTIC PACKAGE-3

文件: 总7页 (文件大小:178K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BZX84BxxxLT1,  
BZX84CxxxLT1 Series,  
SZBZX84BxxxLT1G,  
SZBZX84CxxxLT1G Series  
Zener Voltage Regulators  
http://onsemi.com  
225 mW SOT23 Surface Mount  
3
1
This series of Zener diodes is offered in the convenient, surface  
mount plastic SOT23 package. These devices are designed to provide  
voltage regulation with minimum space requirement. They are well  
suited for applications such as cellular phones, hand held portables,  
and high density PC boards.  
Cathode  
Anode  
MARKING DIAGRAM  
3
SOT23  
CASE 318  
STYLE 8  
xxx M G  
G
1
Features  
2
1
225 mW Rating on FR4 or FR5 Board  
Zener Breakdown Voltage Range 2.4 V to 75 V  
Package Designed for Optimal Automated Board Assembly  
Small Package Size for High Density Applications  
ESD Rating of Class 3 (>16 kV) per Human Body Model  
Tight Tolerance Series Available (See Page 4)  
AECQ101 Qualified and PPAP Capable  
xxx  
M
G
= Device Code  
= Date Code*  
= PbFree Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements  
BZX84CxxxLT1  
SOT23 3000/Tape & Reel  
PbFree Packages are Available  
BZX84CxxxLT1G  
SOT23 3000/Tape & Reel  
(PbFree)  
Mechanical Characteristics  
SZBZX84xxxLT1G  
BZX84CxxxLT3  
SOT23 3000/Tape & Reel  
(PbFree)  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily Solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
POLARITY: Cathode indicated by polarity band  
FLAMMABILITY RATING: UL 94 V0  
SOT23  
10,000/Tape &  
Reel  
BZX84CxxxLT3G  
SOT23  
(PbFree)  
10,000/Tape &  
Reel  
SZBZXCxxxLT3G  
SOT23  
(PbFree)  
10,000/Tape &  
Reel  
MAXIMUM RATINGS  
BZX84BxxxLT1  
SOT23 3000/Tape & Reel  
Rating  
Symbol  
Max  
Unit  
BZX84BxxxLT1G  
SOT23  
(PbFree)  
3000 / Tape &  
Reel  
Total Power Dissipation on FR5 Board,  
(Note 1) @ T = 25°C  
Derated above 25°C  
P
D
225  
1.8  
556  
mW  
mW/°C  
°C/W  
A
SZBZX84BxxxLT1G SOT23  
(PbFree)  
3000 / Tape &  
Reel  
Thermal Resistance, JunctiontoAmbient  
R
q
JA  
BZX84BxxxLT3  
SOT23  
10,000 / Tape &  
Reel  
Total Power Dissipation on Alumina  
P
D
Substrate, (Note 2) @ T = 25°C  
300  
2.4  
417  
mW  
mW/°C  
°C/W  
A
BZX84BxxxLT3G  
SOT23  
(PbFree)  
10,000/Tape &  
Reel  
Derated above 25°C  
Thermal Resistance, JunctiontoAmbient  
R
q
JA  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Junction and Storage Temperature Range  
T , T  
65 to  
+150  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR5 = 1.0 X 0.75 X 0.62 in.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 3 of  
this data sheet.  
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
November, 2011 Rev. 14  
BZX84C2V4LT1/D  
 
BZX84BxxxLT1, BZX84CxxxLT1 Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series  
ELECTRICAL CHARACTERISTICS  
I
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C  
A
I
F
unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)  
F
F
Symbol  
Parameter  
V
Reverse Zener Voltage @ I  
Reverse Current  
Z
ZT  
I
ZT  
V
Z
V
R
V
I
Z
ZT  
Maximum Zener Impedance @ I  
V
F
R
ZT  
ZT  
I
I
Reverse Leakage Current @ V  
Reverse Voltage  
R
R
V
R
I
F
Forward Current  
V
F
Forward Voltage @ I  
F
QV  
Maximum Temperature Coefficient of V  
Z
Z
Zener Voltage Regulator  
C
Max. Capacitance @ V = 0 and f = 1 MHz  
R
http://onsemi.com  
2
BZX84BxxxLT1, BZX84CxxxLT1 Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series  
ELECTRICAL CHARACTERISTICS BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)  
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)  
A
F
F
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)  
V
@ I  
(Volts)  
V
(V)  
= 1 mA  
V
(V)  
Max Reverse  
Leakage  
Current  
q
VZ  
Z1  
Z2  
Z3  
= 5 mA  
@ I  
@ I = 20 mA  
(mV/k)  
@ I = 5 mA  
ZT1  
ZT1  
ZT2  
(Note 3)  
ZT3  
Z
(W)  
@ I  
5 mA  
Z
(W)  
@ I  
1 mA  
Z
ZT3  
(W)  
@ I =  
ZT3  
(Note 3)  
ZT1  
ZT2  
(Note 3)  
C (pF)  
I
V
R
Volts  
Device  
=
=
@ V = 0  
R
ZT1  
ZT2  
R
@
Min  
Nom  
2.4  
2.7  
3
Max  
2.6  
Min  
1.7  
Max  
2.1  
2.4  
2.7  
2.9  
3.3  
3.5  
4
Min  
Max  
3.2  
Min  
Max  
0
mA  
Device*  
Marking  
f = 1 MHz  
20 mA  
SZ/BZX84C2V4LT1, G  
SZ/BZX84C2V7LT1, G  
SZ/BZX84C3V0LT1, G  
SZ/BZX84C3V3LT1, G  
SZ/BZX84C3V6LT1, G  
SZ/BZX84C3V9LT1, G  
SZ/BZX84C4V3LT1, G  
SZ/BZX84C4V7LT1/T3, G  
SZ/BZX84C5V1LT1/T3, G  
SZ/BZX84C5V6LT1/T3, G  
SZ/BZX84C6V2LT1/T3, G  
SZ/BZX84C6V8LT1/T3, G  
SZ/BZX84C7V5LT1, G  
SZ/BZX84C8V2LT1, G  
SZ/BZX84C9V1LT1/T3, G  
SZ/BZX84C10LT1, G  
SZ/BZX84C11LT1, G  
SZ/BZX84C12LT1, G  
SZ/BZX84C13LT1, G  
SZ/BZX84C15LT1/T3, G  
SZ/BZX84C16LT1, G  
SZ/BZX84C18LT1/T3, G  
SZ/BZX84C20LT1, G  
SZ/BZX84C22LT1, G  
SZ/BZX84C24LT1, G  
Z11  
Z12  
Z13  
Z14  
Z15  
Z16  
W9  
Z1  
2.2  
2.5  
100  
100  
95  
95  
90  
90  
90  
80  
60  
40  
10  
15  
15  
15  
15  
20  
20  
25  
30  
30  
40  
45  
55  
55  
70  
600  
600  
600  
600  
600  
600  
600  
500  
480  
400  
150  
80  
2.6  
3
50  
50  
1
1
3.5  
3.5  
3.5  
3.5  
3.5  
3.5  
3.5  
3.5  
2.7  
2.0  
0.4  
450  
2.9  
1.9  
3.6  
50  
50  
40  
40  
30  
30  
15  
15  
10  
6
20  
10  
5
0
450  
450  
450  
450  
450  
450  
260  
225  
200  
185  
155  
140  
135  
130  
130  
130  
130  
120  
110  
105  
100  
85  
2.8  
3.2  
2.1  
3.3  
3.6  
3.9  
4.1  
4.4  
4.5  
5
3.9  
1
0
3.1  
3.3  
3.6  
3.9  
4.3  
4.7  
5.1  
5.6  
6.2  
6.8  
7.5  
8.2  
9.1  
10  
3.5  
2.3  
4.2  
1
0
3.4  
3.8  
2.7  
4.5  
5
1
0
3.7  
4.1  
2.9  
4.7  
3
1
2.5  
0
4
4.6  
3.3  
5.1  
3
1
4.4  
5
3.7  
4.7  
5.3  
6
5.4  
3
2
0.2  
1.2  
2.5  
3.7  
4.5  
5.3  
6.2  
7.0  
8.0  
9.0  
10.0  
11.0  
13.0  
14.0  
16.0  
18.0  
20.0  
22.0  
Z2  
4.8  
5.4  
4.2  
5.9  
2
2
Z3  
5.2  
6
4.8  
5.2  
5.8  
6.4  
7
6.3  
1
2
Z4  
5.8  
6.6  
5.6  
6.6  
7.2  
7.9  
8.7  
9.6  
10.6  
11.6  
12.7  
14  
6.8  
3
4
Z5  
6.4  
7.2  
6.3  
7.4  
6
2
4
1.2  
Z6  
7
7.9  
6.9  
80  
8
6
1
5
2.5  
Z7  
7.7  
8.7  
7.6  
80  
7.7  
8.5  
9.4  
10.4  
11.4  
12.5  
13.9  
15.4  
16.9  
18.9  
20.9  
22.9  
8.8  
6
0.7  
0.5  
0.2  
0.1  
0.1  
0.1  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
5
3.2  
Z8  
8.5  
9.6  
8.4  
100  
150  
150  
150  
170  
200  
200  
225  
225  
250  
250  
9.7  
8
6
3.8  
Z9  
9.4  
10.6  
11.6  
12.7  
14.1  
15.6  
17.1  
19.1  
21.2  
23.3  
25.6  
9.3  
10.7  
11.8  
12.9  
14.2  
15.7  
17.2  
19.2  
21.4  
23.4  
25.7  
10  
10  
10  
15  
20  
20  
20  
20  
25  
25  
7
4.5  
Y1  
Y2  
Y3  
Y4  
Y5  
Y6  
Y7  
Y8  
Y9  
10.4  
11.4  
12.4  
13.8  
15.3  
16.8  
18.8  
20.8  
22.8  
11  
10.2  
11.2  
12.3  
13.7  
15.2  
16.7  
18.7  
20.7  
22.7  
8
5.4  
12  
8
6.0  
13  
8
7.0  
15  
15.5  
17  
10.5  
11.2  
12.6  
14  
15.4  
16.8  
9.2  
16  
10.4  
12.4  
14.4  
16.4  
18.4  
18  
19  
20  
21.1  
23.2  
25.5  
22  
85  
24  
80  
V
Below  
= 0.1 m-  
A
Max Reverse  
Leakage  
Current  
q
VZ  
(mV/k) Below  
Z2  
V
Below  
= 2 mA  
@ I  
ZT2  
V Below  
Z3  
Z1  
Z
Z
Z
@ I  
ZT1  
@ I  
ZT3  
= 10 mA  
ZT1  
ZT2  
ZT3  
@ I  
= 2 mA  
ZT1  
Below  
Below  
Below  
C (pF)  
I
V
R
Device  
Marking  
@ I  
ZT1  
=
@ I  
0.5 mA  
=
@ I  
10 mA  
=
@ V = 0  
R
ZT4  
ZT3  
R
@
Min  
Nom  
Max  
28.9  
32  
Min  
Max  
28.9  
32  
Min  
Max  
29.3  
32.4  
35.4  
38.4  
41.5  
46.5  
50.5  
54.6  
60.8  
67  
(V)  
18.9  
21  
Min  
Max  
25.3  
29.4  
33.4  
37.4  
41.2  
46.6  
51.8  
57.2  
63.8  
71.6  
79.8  
88.6  
mA  
Device  
2 mA  
f = 1 MHz  
SZ/BZX84C27LT1, G  
SZ/BZX84C30LT1, G  
SZ/BZX84C33LT1/T3, G  
SZ/BZX84C36LT1, G  
SZ/BZX84C39LT1, G  
SZ/BZX84C43LT1, G  
SZ/BZX84C47LT1, G  
SZ/BZX84C51LT1, G  
SZ/BZX84C56LT1, G  
SZ/BZX84C62LT1, G  
SZ/BZX84C68LT1, G  
SZ/BZX84C75LT1, G  
Y10  
Y11  
Y12  
Y13  
Y14  
Y15  
Y16  
Y17  
Y18  
Y19  
Y20  
Y21  
25.1  
28  
31  
34  
37  
40  
44  
48  
52  
58  
64  
70  
27  
30  
33  
36  
39  
43  
47  
51  
56  
62  
68  
75  
80  
80  
25  
300  
300  
325  
350  
350  
375  
375  
400  
425  
450  
475  
500  
25.2  
28.1  
31.1  
34.1  
37.1  
40.1  
44.1  
48.1  
52.1  
58.2  
64.2  
70.3  
45  
50  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
21.4  
24.4  
27.4  
30.4  
33.4  
37.6  
42.0  
46.6  
52.2  
58.8  
65.6  
73.4  
70  
27.8  
30.8  
33.8  
36.7  
39.7  
43.7  
47.6  
51.5  
57.4  
63.4  
69.4  
70  
70  
70  
45  
40  
40  
40  
40  
35  
35  
35  
35  
80  
35  
55  
23.1  
25.2  
27.3  
30.1  
32.9  
35.7  
39.2  
43.4  
47.6  
52.5  
38  
90  
38  
60  
41  
130  
150  
170  
180  
200  
215  
240  
255  
41  
70  
46  
46  
80  
50  
50  
90  
54  
54  
100  
110  
120  
130  
140  
60  
60  
66  
66  
72  
72  
73.2  
80.2  
79  
79  
3. Zener voltage is measured with a pulse test current I at an ambient temperature of 25°C.  
Z
* The “G” suffix indicates PbFree package available.  
http://onsemi.com  
3
 
BZX84BxxxLT1, BZX84CxxxLT1 Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series  
ELECTRICAL CHARACTERISTICS BZX84BxxxL (Tight Tolerance Series)  
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)  
A
F
F
Max Reverse  
Leakage  
Current  
Z
ZT  
(W) @  
q
VZ  
(mV/k)  
@ I = 5 mA  
I
ZT  
= 5 mA  
V
Z
(Volts) @ I  
= 5 mA  
ZT  
C (pF)  
I
V
R
(Note 4)  
Max  
80  
(Note 4)  
Nom  
4.7  
5.1  
5.6  
6.2  
6.8  
7.5  
8.2  
9.1  
12  
R
ZT  
@ V =0,  
Device  
Marking  
@
R
Min  
4.61  
5.00  
5.49  
6.08  
6.66  
7.35  
8.04  
8.92  
11.8  
14.7  
15.7  
17.6  
21.6  
23.5  
Max  
4.79  
5.20  
5.71  
6.32  
6.94  
7.65  
8.36  
9.28  
12.2  
15.3  
16.3  
18.4  
22.4  
24.5  
mA  
Volts  
2
Min  
Max  
0.2  
1.2  
2.5  
3.7  
4.5  
5.3  
6.2  
7
f = 1 MHz  
260  
225  
200  
185  
155  
140  
135  
130  
130  
110  
Device  
BZX84B4V7LT1, G  
T10  
T11  
T12  
T13  
T14  
T15  
T16  
T17  
T18  
T22  
T19  
T20  
T24  
T25  
3
2
1
3
2
1
3.5  
2.7  
2  
SZ/BZX84B5V1LT1, G  
SZ/BZX84B5V6LT1, G  
SZ/BZX84B6V2LT1, G  
SZ/BZX84B6V8LT1, G  
SZ/BZX84B7V5LT1, G  
BZX84B8V2LT1, G  
BZX84B9V1LT1, G  
SZ/BZX84B12LT1, G  
BZX84B15LT1, G  
60  
2
40  
2
10  
4
0.4  
15  
4
1.2  
15  
5
2.5  
15  
0.7  
0.5  
5
3.2  
15  
6
3.8  
25  
0.1  
8
6
10  
15  
30  
0.05  
0.05  
0.05  
0.05  
0.05  
10.5  
11.2  
12.6  
15.4  
16.8  
9.2  
13  
SZ/BZX84B16LT1, G  
BZX84B18LT1, G  
16  
40  
10.4  
12.4  
16.4  
18.4  
14  
105  
100  
85  
18  
45  
16  
BZX84B22LT1, G  
22  
55  
20  
BZX84B24LT1, G  
24  
70  
22  
80  
4. Zener voltage is measured with a pulse test current I at an ambient temperature of 25°C.  
Z
*The “G” suffix indicates PbFree package available.  
http://onsemi.com  
4
 
BZX84BxxxLT1, BZX84CxxxLT1 Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series  
TYPICAL CHARACTERISTICS  
8
7
6
5
4
3
100  
10  
1
TYPICAL T VALUES  
C
TYPICAL T VALUES  
C
V @ I  
Z
ZT  
V @ I  
Z
ZT  
2
1
0
-1  
-ꢀ2  
-ꢀ3  
2
3
4
5
6
7
8
9
10  
11  
12  
10  
100  
V , NOMINAL ZENER VOLTAGE (V)  
Z
V , NOMINAL ZENER VOLTAGE (V)  
Z
Figure 1. Temperature Coefficients  
Figure 2. Temperature Coefficients  
(Temperature Range 55°C to +150°C)  
(Temperature Range 55°C to +150°C)  
1000  
100  
10  
1
1000  
100  
10  
T = 25°C  
75 V (MMBZ5267BLT1)  
91 V (MMBZ5270BLT1)  
J
I
Z(AC)  
f = 1 kHz  
= 0.1 I  
Z(DC)  
I = 1 mA  
Z
5 mA  
20 mA  
75°C 25°C  
0.6 0.7  
0°C  
150°C  
0.5  
1
0.4  
1
10  
V , NOMINAL ZENER VOLTAGE  
100  
0.8  
0.9  
1.0  
1.1  
1.2  
V , FORWARD VOLTAGE (V)  
F
Z
Figure 3. Effect of Zener Voltage on  
Zener Impedance  
Figure 4. Typical Forward Voltage  
http://onsemi.com  
5
BZX84BxxxLT1, BZX84CxxxLT1 Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series  
TYPICAL CHARACTERISTICS  
1000  
100  
1000  
T = 25°C  
A
100  
10  
0 V BIAS  
1 V BIAS  
1
+150°C  
BIAS AT  
50% OF V NOM  
0.1  
0.01  
Z
10  
1
+ꢀ25°C  
-ꢀ55°C  
0.001  
0.0001  
0.00001  
1
10  
100  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
V , NOMINAL ZENER VOLTAGE (V)  
Z
V , NOMINAL ZENER VOLTAGE (V)  
Z
Figure 5. Typical Capacitance  
Figure 6. Typical Leakage Current  
100  
10  
100  
10  
T = 25°C  
A
T = 25°C  
A
1
1
0.1  
0.01  
0.1  
0.01  
10  
30  
50  
70  
90  
0
2
4
6
8
10  
12  
V , ZENER VOLTAGE (V)  
Z
V , ZENER VOLTAGE (V)  
Z
Figure 8. Zener Voltage versus Zener Current  
(12 V to 91 V)  
Figure 7. Zener Voltage versus Zener Current  
(VZ Up to 12 V)  
http://onsemi.com  
6
BZX84BxxxLT1, BZX84CxxxLT1 Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series  
PACKAGE DIMENSIONS  
SOT23 (TO236)  
CASE 31808  
ISSUE AP  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
D
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH  
SEE VIEW C  
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM  
3
THICKNESS OF BASE MATERIAL.  
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS.  
H
E
MILLIMETERS  
INCHES  
E
DIM  
A
A1  
b
c
D
E
e
L
L1  
MIN  
0.89  
0.01  
0.37  
0.09  
2.80  
1.20  
1.78  
0.10  
0.35  
2.10  
0°  
NOM  
1.00  
0.06  
0.44  
0.13  
2.90  
1.30  
1.90  
0.20  
0.54  
2.40  
−−−  
MAX  
MIN  
0.035  
0.001  
0.015  
0.003  
0.110  
0.047  
0.070  
0.004  
0.014  
0.083  
0°  
NOM  
0.040  
0.002  
0.018  
0.005  
0.114  
0.051  
0.075  
0.008  
0.021  
0.094  
−−−  
MAX  
0.044  
0.004  
0.020  
0.007  
0.120  
0.055  
0.081  
0.012  
0.029  
0.104  
10°  
1.11  
0.10  
0.50  
0.18  
3.04  
1.40  
2.04  
0.30  
0.69  
2.64  
10°  
c
1
2
b
0.25  
e
q
H
A
E
q
L
STYLE 8:  
A1  
PIN 1. ANODE  
L1  
VIEW C  
2. NO CONNECTION  
3. CATHODE  
SOLDERING FOOTPRINT*  
0.95  
0.037  
0.95  
0.037  
2.0  
0.079  
0.9  
0.035  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
0.8  
0.031  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 8002829855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81358171050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 3036752175 or 8003443860 Toll Free USA/Canada  
Fax: 3036752176 or 8003443867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
BZX84C2V4LT1/D  

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