CNY17F3SM [ONSEMI]
6 引脚 DIP 高 BVCEO光电晶体管输出光电耦合器;
| 型号： | CNY17F3SM |
| 厂家： | 
ONSEMI |
| 描述： | 6 引脚 DIP 高 BVCEO光电晶体管输出光电耦合器 输出元件 晶体管 光电晶体管 |
| 文件： | 总12页 (文件大小：367K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
6-Pin DIP High BVCEO
Phototransistor
Optocouplers
6
1
PDIP6
CASE 646BY
CNY17 Series, MOC8106M
Description
The CNY17XM, CNY17FXM, and MOC8106M devices consist of
a gallium arsenide infrared emitting diode coupled with an NPN
phototransistor in a dual in−line package.
6
1
PDIP6
CASE 646BX
Features
High BV
: 70 V Minimum
CEO
(CNY17XM, CNY17FXM, MOC8106M)
Closely Matched Current Transfer Ratio (CTR) Minimizes
Unit−to−Unit Variation
Current Transfer Ratio In Select Groups
6
Very Low Coupled Capacitance Along With
No Chip−to−Pin 6 Base Connection for Minimum Noise
Susceptibility (CNY17FXM, MOC8106M)
1
PDIP6
CASE 646BZ
Safety and Regulatory Approvals:
UL1577, 4,170 VAC
for 1 Minute
RMS
MARKING DIAGRAM
DIN−EN/IEC60747−5−5, 850 V Peak Working
Insulation Voltage
Applications
1
ON
Power Supply Regulators
Digital Logic Inputs
Microprocessor Inputs
Appliance Sensor Systems
Industrial Controls
2
6
CNY17−1
V
X
YY
Q
3
5
4
1.
2.
3.
ON
= onsemi Logo
CNY17 = Device Number
V
= DIN EN/IEC60747−5−5 Option
(only appears on component ordered
with this option)
4
X
= One−Digit Year Code
5.
6.
YY
Q
= Digit Work Week
= Assembly Package Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
December, 2022 − Rev. 3
CNY17F4M/D
CNY17 Series, MOC8106M
SCHEMATICS
1
2
1
6
6
BASE
ANODE
NC
ANODE
2
3
CATHODE
5 COLLECTOR
4 EMITTER
CATHODE
5 COLLECTOR
4 EMITTER
3
NC
NC
CNY17F1M/2M/3M/4M
MOC8106M
CNY171M/2M/3M/4M
Figure 1. Schematics
SAFETY AND INSULATION RATINGS
As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Characteristics
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains
Voltage
< 150 V
I–IV
I–IV
RMS
RMS
< 300 V
Climatic Classification
55/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Value
Unit
V
PR
Input−to−Output Test Voltage, Method A, V
x 1.6 = V
,
1360
Vpeak
IORM
PR
Type and Sample Test with t = 10 s, Partial Discharge < 5 pC
m
Input−to−Output Test Voltage, Method B, V
x 1.875 = V
,
1594
Vpeak
IORM
PR
100% Production Test with t = 1 s, Partial Discharge < 5 pC
m
V
Maximum Working Insulation Voltage
Highest Allowable Over−Voltage
External Creepage
850
6000
7
Vpeak
Vpeak
mm
mm
mm
mm
C
IORM
V
IOTM
External Clearance
7
External Clearance (for Option TV, 0.4” Lead Spacing)
Distance Through Insulation (Insulation Thickness)
Case Temperature (Note 1)
10
0.5
175
350
800
DTI
T
S
I
Input Current (Note 1)
mA
S, INPUT
P
Output Power (Note 1)
mW
S, OUTPUT
9
R
Insulation Resistance at T , V = 500 V (Note 1)
> 10
IO
S
IO
1. Safety limit values – maximum values allowed in the event of a failure.
www.onsemi.com
2
CNY17 Series, MOC8106M
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
TOTAL DEVICE
T
Storage Temperature
−40 to +125
−40 to +100
−40 to +125
260 for 10 seconds
270
C
C
STG
T
Ambient Operating Temperature
Junction Temperature
A
T
J
C
T
Lead Solder Temperature
C
SOL
P
Total Device Power Dissipation @ 25C (LED plus detector)
Derate Linearly From 25C
mW
mW/C
D
2.94
EMITTER
I
Continuous Forward Current
Reverse Voltage
60
6
mA
V
F
V
R
I (pk)
Forward Current – Peak (1 ms pulse, 300 pps)
1.5
120
1.41
A
F
P
D
LED Power Dissipation 25C Ambient
Derate Linearly From 25C
mW
mW/C
DETECTOR
I
Continuous Collector Current
Collector−Emitter Voltage
Emitter Collector Voltage
50
70
mA
V
C
V
V
CEO
ECO
7
V
P
D
Detector Power Dissipation @ 25C
Derate Linearly from 25C
150
1.76
mW
mW/C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
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3
CNY17 Series, MOC8106M
ELECTRICAL CHARACTERISTICS
(T = 25C unless otherwise specified)
A
INDIVIDUAL COMPONENT CHARACTERISTICS
Symbol
Parameter
Test Conditions
Device
Min.
Typ.
Max.
Unit
EMITTER
V
Input Forward Voltage
I = 10 mA
All Devices
CNY17XM, CNY17FXM
All Devices
1.0
1.0
−
1.15
1.35
18
1.50
1.65
−
V
V
F
F
I = 60 mA
F
C
Capacitance
V = 0 V, f = 1.0 MHz
F
pF
mA
J
I
R
Reverse Leakage Current
V
R
= 6 V
All Devices
−
0.001
10
DETECTOR
Breakdown Voltage
BV
BV
BV
Collector−to−Emitter
I
I
= 1 mA, I = 0
All Devices
CNY17XM
All Devices
70
70
7
100
120
10
−
−
−
V
V
V
CEO
CBO
ECO
C
F
Collector−to−Base
= 10 mA, I = 0
F
C
Emitter−to−Collector
I = 100 mA, I = 0
E F
Leakage Current
I
I
Collector−to−Emitter
V
= 10 V, I = 0
All Devices
CNY17XM
−
−
1
50
20
nA
nA
CEO
CE
F
Collector−to−Base
V
CB
= 10 V, I = 0
−
CBO
F
Capacitance
C
Collector−to−Emitter
V
CE
V
CB
V
EB
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
All Devices
CNY17XM
CNY17XM
−
−
−
8
−
−
−
pF
pF
pF
CE
CB
EB
C
Collector−to−Base
Emitter−to−Base
20
10
C
TRANSFER CHARACTERISTICS
Symbol
COUPLED
CTR
Parameter
Test Conditions
Device
Min.
Typ. Max.
Unit
Current Transfer Ratio
I = 10 mA, V = 10 V
MOC8106M
50
40
63
100
160
−
−
−
−
−
−
−
−
150
80
%
%
%
%
%
V
F
CE
I = 10 mA, V = 5 V
CNY171M, CNY17F1M
CNY172M, CNY17F2M
CNY173M, CNY17F3M
CNY174M, CNY17F4M
MOC8106M
F
CE
I = 10 mA, V = 5 V
125
200
320
0.4
F
CE
I = 10 mA, V = 5 V
F
CE
I = 10 mA, V = 5 V
F
CE
V
Collector−Emitter
Saturation Voltage
I
C
I
C
= 0.5 mA, I = 5 mA
F
CE(SAT)
= 2.5 mA, I = 10 mA
CNY17XM/CNY17FXM
−
F
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4
CNY17 Series, MOC8106M
AC CHARACTERISTICS
Symbol
Parameter
Test Conditions
Device
Min.
Typ. Max.
Unit
NON−SATURATED SWITCHING TIME
ton
toff
td
Turn−On Time
Turn−Off Time
Delay Time
Rise Time
I
I
= 2.0 mA, V = 10 V, R = 100 W
All Devices
−
−
−
−
−
−
2.0
3.0
−
10.0
10.0
5.6
ms
ms
ms
ms
ms
ms
C
CC
L
= 2.0 mA, V = 10 V, R = 100 W
All Devices
C
CC
L
I = 10 mA, V = 5 V, R = 75 W
F
CNY17XM/CNY17FXM
CNY17XM/CNY17FXM
CNY17XM/CNY17FXM
CNY17XM/CNY17FXM
CC
L
tr
I = 10 mA, V = 5 V, R = 75 W
F
−
4.0
CC
L
ts
Storage Time
Fall Time
I = 10 mA, V = 5 V, R = 75 W
F
−
4.1
CC
L
tf
I = 10 mA, V = 5 V, R = 75 W
F
−
3.5
CC
L
SATURATED SWITCHING TIME
td
CNY171M/F1M
−
−
−
−
5.5
8.0
I = 20 mA, V = 5 V, R = 1 kW
ms
ms
F
CC
L
Delay Time
I = 10 mA, V = 5 V, R = 1 kW
CNY172M/3M/4M
CNY17F2M/F3M/F4M
F
CC
L
tr
CNY171M/F1M
−
−
−
−
4.0
6.0
I = 20 mA, V = 5 V, R = 1 kW
ms
ms
F
CC
L
Rise Time
I = 10 mA, V = 5 V, R = 1 kW
CNY172M/3M/4M
CNY17F2M/F3M/F4M
F
CC
L
ts
CNY171M/F1M
−
−
−
−
34.0
39.0
I = 20 mA, V = 5 V, R = 1 kW
ms
ms
F
CC
L
Storage Time
I = 10 mA, V = 5 V, R = 1 kW
CNY172M/3M/4M
CNY17F2M/F3M/F4M
F
CC
L
tf
CNY171M/F1M
−
−
−
−
20.0
24.0
I = 20 mA, V = 5 V, R = 1 kW
ms
ms
F
CC
L
Fall Time
I = 10 mA, V = 5 V, R = 1 kW
CNY172M/3M/4M
CNY17F2M/F3M/F4M
F
CC
L
ISOLATION CHARACTERISTICS
Symbol
VISO
Parameter
Input−Output Isolation Voltage
Isolation Capacitance
Test Conditions
Min.
4170
−
Typ.
Max.
Unit
VACRMS
pF
t = 1 Minute
−
0.2
−
−
−
−
CISO
V
V
= 0 V, f = 1 MHz
I−O
I−O
11
RISO
Isolation Resistance
= 500 VDC, T = 25C
10
W
A
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5
CNY17 Series, MOC8106M
TYPICAL PERFORMANCE CHARACTERISTICS
1.4
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Normalized to
I = 10 mA
F
V
T
A
= 5.0 V
= 25C
CE
1.2
1.0
0.8
0.6
0.4
0.2
I
F
= 5 mA
I
F
= 10 mA
I
F
= 20 mA
Normalized to
I
= 10 mA
F
I T = 25C
A
0
2
4
6
8
10 12 14 16 18 20
−60 −40 −20
0
20
40
60
80 100
I
F,
Forward Current (mA)
T
A,
Ambient Temperature (5C)
Figure 2. Normalized CTR vs. Forward Current
Figure 3. Normalized CTR vs. Ambient
Temperature
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
F
= 20 mA
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
= 20 m
= 20 mA
I
F
I
= 5 mA
F
= 10 mA
= 10 mA
I
F
I
F
= 10 mA
I
==5 m5AmA
I
F
V
CE
= 5.0 V
V
CE
= 0.3 V
10
100
Base Resistance (kW)
1000
10
100
1000
R
R
BE,
Base Resistance (kW)
BE,
Figure 4. CTR vs. RBE (Unsaturated)
Figure 5. CTR vs. RBE (Saturated)
1000
100
10
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I
V
T
= 10 mA
V
= 10 V
CC
F
= 10 V
I = 2 mA
C
R
CC
=25C
= 100 W
A
L
T
f
T
off
T
on
T
r
1
0.1
0.1
1
10
100
10
100
1000
10000
100000
R, Load Resistor (kW)
R
BE,
Base Resistance (kW)
Figure 6. Switching Speed vs. Load Resistor
Figure 7. Normalized ton vs. RBE
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6
CNY17 Series, MOC8106M
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
1.8
1.7
1.6
1.5
1.4
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
T
A
= −55C
T
A
= 25C
1.3
1.2
1.1
1.0
V
=10V
CC
I
C
= 2 mA
R
= 100 W
T
A
= 100C
L
10
100
1000
10000
100000
1
10
100
R , Base Resistance (kW)
BE
I , LED Forward Current (mA)
F
Figure 8. Normalized toff vs. RBE
Figure 9. LED Forward Voltage vs.
Forward Current
100
T= 25C
°
A
10
1
I
F
=2.5mA
0.1
I=20mA
F
0.01
0.001
= 5 mA
I
F
I
= 10mA
I
= 10 mA
F
0.01
0.1
1
10
I , Collector Current (mA)
C
Figure 10. Collector−Emitter Saturation Voltage vs.
Collector Current
SWITCHING TEST CIRCUIT AND WAVEFORMS
V
CC
INPUT PULSE
10%
90%
R
L
I
OUTPUT PULSE
C
I
F
INPUT
OUTPUT (V
)
t
t
s
CE
d
t
t
f
r
t
t
on
off
Figure 11. Switching Test Circuit and Waveforms
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7
CNY17 Series, MOC8106M
REFLOW PROFILE
Figure 12. Reflow Profile
Profile Feature
Pb*Free Assembly Profile
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
Time (tS) from (Tsmin to Tsmax)
150_C
200_C
60–120 seconds
3_C/second max.
217_C
Ramp*up Rate (tto tP)
L
Liquidous Temperature (TL)
Time (tL) Maintained Above (TL)
Peak Body Package Temperature
Time (tP) within 5_C of 260_C
60–150 seconds
260_C +0_C / –5_C
30 seconds
Ramp*down Rate (T to T
Time 25_C to Peak Temperature
6_C / second max.
8 minutes max.
)
P
L
Table 1. ORDERING INFORMATION
Part Number
CNY171M
Package
Packing Method†
DIP 6−Pin
Tube (50 Units)
CNY171SM
SMT 6−Pin (Lead Bend)
SMT 6−Pin (Lead Bend)
Tube (50 Units)
CNY171SR2M
CNY171TM
Tape and Reel (1000 Units)
Tube (50 Units)
DIP 6−Pin, 0.4” Lead Spacing
CNY171VM
DIP 6−Pin, DIN EN/IEC60747−5−5 Option
Tube (50 Units)
CNY171SVM
CNY171SR2VM
CNY171TVM
SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option
SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option
DIP 6−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 Option
Tube (50 Units)
Tape and Reel (1000 Units)
Tube (50 Units)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
2. The product orderable part number system listed in this table also applies to the CNY17FXM product family and the MOC8106M device.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BX
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13449G
PDIP6 8.51X6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BY
ISSUE A
DATE 15 JUL 2019
A
B
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13450G
PDIP6 8.51x6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BZ
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13451G
PDIP6 8.51X6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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