CPH3245-TL-E [ONSEMI]
Low VCE(sat) Bipolar Transistor, NPN, 50V, 2A;
| 型号： | CPH3245-TL-E |
| 厂家： | 
ONSEMI |
| 描述： | Low VCE(sat) Bipolar Transistor, NPN, 50V, 2A 开关 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：686K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CPH3145/CPH3245
Low V (sat) Bipolar Transistor
CE
(PNP)NPN, (–)50V, (–)2A
Features
• Adoption of MBIT Process
• Large Current Capacity
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• Low Collector to Emitter Saturation Voltage
• High Speed Switching
• Ultrasmall Package Facilitates Miniaturization in End Products
(mounting height : 0.9mm)
ELECTRICAL CONNECTION
PNP
NPN
3
3
• High Allowable Power Dissipation
Typical Applications
• Relay Drivers
• Lamp Drivers
• Motor Drivers
• Flash
1
1
2
2
CPH3145
CPH3245
SPECIFICATIONS ( ) : CPH3145
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
1 : Base
2 : Emitter
3 : Collector
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
Value
(−50)80
Unit
V
V
V
V
V
CBO
CES
CEO
EBO
(−50)80
(−)50
(−)6
V
PACKING TYPE : TL
V
V
I
I
I
(−)2
A
C
Collector Current (Pulse)
(−)4
(−)400
A
CP
B
TL
Base Current
mA
Collector Dissipation
When mounted on ceramic substrate
(600mm2
× 0.8mm)
P
0.9
W
C
MARKING
Junction Temperature
Tj
150
°C
°C
Storage Temperature
Tstg
−55 to +150
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
CPH3145
CPH3245
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
June 2015 - Rev. 2
1
Publication Order Number :
CPH3145_CPH3245/D
CPH3145/CPH3245
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2)
Value
typ
Parameter
Symbol
Conditions
Unit
min
max
(−)1
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
I
V
V
V
V
V
=(−)40V, I =0A
μA
μA
CBO
EBO
CB
EB
CE
CE
CB
E
=(−)4V, I =0A
(−)1
C
h
=(−)2V, I =(−)100mA
200
560
FE
C
Gain-Bandwidth Product
f
=(−)10V, I =(−)300mA
420
(16)8
(−165)130 (−330)260
MHz
pF
T
C
Output Capacitance
Cob
=(−)10V, f=1MHz
Collector to Emitter Saturation
Voltage
V
(sat)
(sat)
mV
V
CE
I =(−)1A, I =(−)50mA
C
B
V
Base to Emitter Saturation Voltage
(−)0.9
(−)1.2
BE
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
V
I =(−)10μA, I =0A
V
(−50)80
(−50)80
(BR)CBO
(BR)CES
C
E
V
I =(−)100μA, R =0Ω
C BE
V
V
I =(−)1mA, R =∞
C BE
(−)50
(−)6
V
V
(BR)CEO
(BR)EBO
I =(−)10μA, I =0A
Emitter to Base Breakdown Voltage
Turn-ON Time
V
E
C
t
t
t
(35)35
(200)330
(24)40
ns
ns
ns
on
Storage Time
See specified Test Circuit
stg
Fall Time
f
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
I
I
B1
B1
PW=20μs
D.C.≤1%
PW=20μs
D.C.≤1%
OUTPUT
OUTPUT
I
I
B2
B2
INPUT
INPUT
R
B
R
B
V
R
V
R
R
R
L
L
50Ω
50Ω
+
+
+
+
100μF
470μF
100μF
= --5V
BE
470μF
V
=5V
V
V
CC
= --25V
V
CC
=25V
BE
I = --10I =10I = --0.7A
I =10I = --10I =0.7A
C
B1
B2
C
B1
B2
CPH3145
CPH3245
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2
CPH3145/CPH3245
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CPH3145/CPH3245
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CPH3145/CPH3245
PACKAGE DIMENSIONS
unit : mm
CPH3
CASE 318BA
ISSUE O
Recommended
Soldering Footprint
1 : Base
2 : Emitter
3 : Collector
0.6
0.95
0.95
ORDERING INFORMATION
Device
Marking
Package
Shipping (Qty / Packing)
3,000 / Tape & Reel
CPH3145-TL-E
CPH3245-TL-E
BE
CPH3
SC-59, SOT-23, TO-236
(Pb-Free)
DQ
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
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