CPH3350-TL-W [ONSEMI]
P 沟道，功率 MOSFET，-20V，-3A，83mΩ;
| 型号： | CPH3350-TL-W |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，功率 MOSFET，-20V，-3A，83mΩ 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA0151B
CPH3350
P-Channel Power MOSFET
http://onsemi.com
–
–
Ω
20V, 3A, 83m , Single CPH3
Features
•
Ultrahigh-speed switching
•
•
•
1.8V drive
Halogen free compliance
Protection diode in
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
--20
Unit
V
V
DSS
V
±10
V
GSS
I
-- 3
A
D
Drain Current (Pulse)
I
PW 10 s, duty cycle 1%
When mounted on ceramic substrate (900mm2 0.8mm)
--12
A
≤
μ
≤
DP
Allowable Power Dissipation
Channel Temperature
Storage Temperature
P
1.0
W
°C
°C
×
D
Tch
150
Tstg
--55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: CPH3
7015A-004
• JEITA, JEDEC
: SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
CPH3350-TL-H
CPH3350-TL-W
Packing Type: TL
Marking
2.9
0.15
0.05
3
TL
1
2
0.95
1 : Gate
0.4
Electrical Connection
2 : Source
3 : Drain
3
CPH3
1
2
Semiconductor Components Industries, LLC, 2013
October, 2013
O0913 TKIM TC-00002895/60612 TKIM/D1411PE TKIM TC-00002683 No. A0151-1/6
CPH3350
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
--20
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=-- 1mA, V =0V
V
μA
μA
V
(BR)DSS
D
GS
=-- 20V, V =0V
I
I
V
V
V
V
-- 1
DSS
DS
GS
DS
DS
GS
=±8V, V =0V
DS
±10
GSS
V
(off)
GS
=-- 10V, I =-- 1mA
--0.4
--1.3
D
Forward Transfer Admittance
| yfs |
=-- 10V, I =-- 1.5A
4.3
S
D
R
R
R
(on)1
(on)2
(on)3
I
I
I
=-- 1.5A, V =-- 4.5V
GS
64
89
83
124
196
mΩ
mΩ
mΩ
pF
pF
pF
ns
DS
DS
DS
D
D
D
Static Drain-to-Source On-State Resistance
=-- 1A, V =-- 2.5V
GS
=-- 0.2A, V =-- 1.8V
GS
131
375
77
Input Capacitance
Ciss
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--10V, f=1MHz
DS
58
t
t
t
t
(on)
8.1
26
d
r
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
42
ns
d
f
37
ns
Total Gate Charge
Qg
4.6
0.8
1.3
--0.83
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=--10V, V =--4.5V, I =--3A
DS
GS
D
V
SD
I =--3A, V =0V
S GS
--1.2
Switching Time Test Circuit
V
V
= --10V
DD
IN
0V
--4.5V
I
= --1.5A
D
V
IN
R =6.67Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
CPH3350
P. G
50Ω
S
Ordering Information
Device
Package
CPH3
Shipping
memo
CPH3350-TL-H
3,000pcs./reel
Pb Free and Halogen Free
CPH3350-TL-W
No. A0151-2/6
CPH3350
I
-- V
I
-- V
D GS
D
DS
--3.0
--2.5
--2.0
--1.5
--1.0
--5
--4
--3
--2
V
= --10V
DS
--1
0
--0.5
0
V
= --1.0V
GS
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
IT13009
Drain-to-Source Voltage, V
-- V
IT13008
Gate-to-Source Voltage, V
-- V
GS
DS
R
(on) -- V
R
(on) -- Ta
DS
DS
GS
300
250
200
150
100
250
200
150
100
Ta=25°C
I = --0.2A
D
--1.0A
--1.5A
50
0
50
0
0
--1
--2
--3
--4
--5
--6
--7
--8
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
IT13010
Ambient Temperature, Ta -- °C
IT13011
GS
I
-- V
| yfs | -- I
S
SD
D
--10
7
5
10
7
V
= --10V
V
=0V
DS
GS
3
2
5
--1.0
3
2
7
5
3
2
--0.1
1.0
7
7
5
3
2
5
--0.01
3
2
7
5
3
2
0.1
--0.01
--0.001
2
3
5
7
2
3
5
7
2
3
5
7
--10
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT13013
--0.1
--1.0
Drain Current, I -- A
D
IT13012
Diode Forward Voltage, V -- V
SD
Ciss, Coss, Crss -- V
SW Time -- I
DS
D
2
1000
V
V
= --10V
= --4V
f=1MHz
DD
GS
7
5
100
Ciss
7
5
3
2
3
2
100
7
5
10
t (on)
d
3
2
7
5
--0.1
2
3
5
7
2
3
5
7
0
--2
--4
--6
--8
--10 --12 --14 --16 --18 --20
IT13015
--1.0
--10
IT13014
Drain Current, I -- A
Drain-to-Source Voltage, V
-- V
D
DS
No. A0151-3/6
CPH3350
A S O
V
-- Qg
GS
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--100
7
V
= --10V
DS
5
I = --3A
D
3
2
I
= --12A (PW≤10μs)
DP
--10
7
5
I = --3A
D
3
2
--1.0
7
5
Operation in this area
is limited by R (on).
3
2
DS
--0.1
7
5
3
2
Ta=25°C
--0.5
0
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
--0.01
--0.1
0
1
2
3
4
5
2
3
5
7
2
3
5
7
2
3
5 7
--100
--1.0
--10
Total Gate Charge, Qg -- nC
IT13016
Drain-to-Source Voltage, V
-- V
IT16676
DS
P
-- Ta
D
1.2
1.0
0.8
0.6
0.4
When mounted on ceramic substrate
(900mm2×0.8mm)
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT13018
No. A0151-4/6
CPH3350
Outline Drawing
Land Pattern Example
CPH3350-TL-H, CPH3350-TL-W
Mass (g) Unit
Unit: mm
0.013
mm
* For reference
0.6
0.95
0.95
No. A0151-5/6
CPH3350
Note on usage : Since the CPH3350 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A0151-6/6
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