CPH3356-TL-H [ONSEMI]
Single P-Channel Power MOSFET, -20V, -2.5A, 137mΩ;型号: | CPH3356-TL-H |
厂家: | ONSEMI |
描述: | Single P-Channel Power MOSFET, -20V, -2.5A, 137mΩ 开关 光电二极管 晶体管 |
文件: | 总5页 (文件大小:633K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CPH3356
Power MOSFET
–20V, 137mΩ, –2.5A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and
low on resistance. This devices is suitable for applications with low gate
charge driving or low on resistance requirements.
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Features
• Low On-Resistance
• 1.8V drive
• ESD Diode-Protected Gate
• Pb-Free, Halogen Free and RoHS compliance
V
R
(on) Max
I
D Max
DSS
DS
137mΩ@ −4.5V
203mΩ@ −2.5V
323mΩ@ −1.8V
−20V
−2.5A
Typical Applications
• Load Switch
• Motor Driver
ELECTRICAL CONNECTION
P-Channel
SPECIFICATIONS
3
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Value
Unit
V
V
V
−20
10
DSS
GSS
V
1
1 : Gate
2 : Source
3 : Drain
I
−2.5
A
D
Drain Current (Pulse)
I
−10
A
DP
PW ≤ 10μs, duty cycle ≤ 1%
2
Power Dissipation
When mounted on ceramic substrate
(900mm2
× 0.8mm)
P
1
W
D
PACKING TYPE : TL
MARKING
Junction Temperature
Tj
150
°C
°C
Storage Temperature
Tstg
−55 to +150
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
TL
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm2
0.8mm)
Symbol
Value
Unit
ORDERING INFORMATION
See detailed ordering and shipping
R
θJA
125
°C/W
information on page 5 of this data sheet.
×
© Semiconductor Components Industries, LLC, 2015
April 2015 - Rev. 2
1
Publication Order Number :
CPH3356/D
CPH3356
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2)
Value
typ
Parameter
Symbol
V(
Conditions
Unit
min
−20
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
)
I =−1mA, V =0V
V
μA
μA
V
BR DSS
D
GS
=−20V, V =0V
I
I
V
−1
DSS
GSS
DS
GS
DS
DS
GS
V
V
V
= 8V, V =0V
DS
10
V
(th)
=−10V, I =−1mA
−0.4
−1.4
GS
FS
D
Forward Transconductance
g
=−10V, I =−1A
2.7
105
145
215
250
60
S
D
R
DS
R
DS
R
DS
(on)1
(on)2
(on)3
I =−1A, V =−4.5V
GS
137
203
323
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
D
Static Drain to Source On-State
Resistance
I =−0.5A, V =−2.5V
GS
D
I =−0.1A, V =−1.8V
D
GS
Input Capacitance
Ciss
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=−10V, f=1MHz
DS
45
t (on)
d
5.7
11
t
r
See specified Test Circuit
Turn-OFF Delay Time
Fall Time
34
t (off)
d
20
t
f
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
Qg
3.3
Qgs
Qgd
0.65
0.72
−0.87
V
=−10V, V =−4.5V, I =−2.5A
GS
DS
D
V
I =−2.5A, V =0V
GS
−1.5
SD
S
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
V
V
DD
= --10V
IN
0V
--4.5V
I
= --1A
D
V
IN
R =10Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
CPH3356
P.G
50Ω
S
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2
CPH3356
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3
CPH3356
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4
CPH3356
PACKAGE DIMENSIONS
unit : mm
CPH3
CASE 318BA
ISSUE O
Recommended
Soldering Footprint
1 : Gate
2 : Source
3 : Drain
0.6
0.95
0.95
ORDERING INFORMATION
Device
Marking
WN
Package
CPH3
SC-59, SOT-23, TO-236
(Pb-Free / Halogen Free)
Shipping (Qty / Packing)
3,000 / Tape & Reel
CPH3356-TL-H
CPH3356-TL-W
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the CPH3356 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiariesin the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
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