CPH3448TL [ONSEMI]
4000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE, CPH3, SC-95, SC-96, SOT-457, 3 PIN;
| 型号： | CPH3448TL |
| 厂家： | 
ONSEMI |
| 描述： | 4000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE, CPH3, SC-95, SC-96, SOT-457, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：364K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1648
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
CPH3448
Features
•
1.8V drive
•
Halogen free compliance
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
V
30
±12
4
DSS
GSS
V
I
I
A
D
Drain Current (Pulse)
PW≤10μs, duty cycle 1%
16
A
≤
DP
Allowable Power Dissipation
Channel Temperature
Storage Temperature
P
When mounted on ceramic substrate (900mm2 0.8mm)
1.0
150
W
°C
°C
×
D
Tch
Tstg
--55 to +150
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: CPH3
7015A-004
• JEITA, JEDEC
: SC-96, SC-95, SOT346, SOT457
• Minimum Packing Quantity : 3,000 pcs./reel
2.9
0.15
0.05
Packing Type: TL
Marking
3
TL
1
2
0.95
1 : Gate
0.4
2 : Source
3 : Drain
Electrical Connection
3
SANYO : CPH3
1
2
http://semicon.sanyo.com/en/network
No. A1648-1/4
90110PE TK IM TC-00002462
CPH3448
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
I
=1mA, V =0V
30
(BR)DSS
D
GS
V
V
V
V
I
=30V, V =0V
GS
1
A
A
μ
DSS
GSS
DS
GS
DS
DS
I
=±8V, V =0V
DS
±10
1.3
μ
V
(off)
|
=10V, I =1mA
D
0.4
V
GS
yfs
Forward Transfer Admittance
=10V, I =2A
D
3.4
38
S
|
R
R
R
(on)1
(on)2
(on)3
=2A, V =4.5V
GS
50
72
m
Ω
Ω
Ω
DS
DS
DS
D
Static Drain-to-Source On-State Resistance
I
I
=1A, V =2.5V
GS
51
m
m
D
D
=0.5A, V =1.8V
GS
80
130
Input Capacitance
Ciss
V
V
V
=10V, f=1MHz
=10V, f=1MHz
=10V, f=1MHz
430
59
pF
DS
DS
DS
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
38
t (on)
d
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
10
t
41
r
Turn-OFF Delay Time
Fall Time
t (off)
d
36
t
37
f
Total Gate Charge
Qg
V
V
V
=15V, V =4.5V, I =4A
GS
4.7
0.8
1.1
0.82
DS
DS
DS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
=15V, V =4.5V, I =4A
GS
D
=15V, V =4.5V, I =4A
GS
D
V
I =4A, V =0V
S
1.2
SD
GS
Switching Time Test Circuit
V
=15V
DD
V
IN
4.5V
0V
I
=2A
D
R =7.5Ω
L
V
V
D
IN
OUT
PW=10μs
D.C.≤1%
G
P. G
50Ω
CPH3448
S
I
-- V
I
-- V
GS
D
DS
D
4.0
3.5
3.0
2.5
2.0
1.5
1.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
V
=10V
DS
1.5V
0.5
0
0.5
0
V
=1.2V
GS
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Drain-to-Source Voltage, V
-- V
IT14344
Gate-to-Source Voltage, V -- V
GS
IT14345
DS
No. A1648-2/4
CPH3448
R
(on) -- V
R
(on) -- Ta
DS
DS
GS
140
120
100
80
140
120
100
80
Ta=25°C
I =1A
D
2A
0.5A
60
60
40
40
20
0
20
0
0
1
2
3
4
5
6
7
8
9
10
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
IT14346
Ambient Temperature, Ta -- °C
IT14347
GS
| yfs | -- I
I
-- V
SD
D
S
7
5
7
5
V
=10V
V
=0V
DS
GS
3
2
3
2
1.0
7
5
1.0
7
3
2
5
0.1
7
5
3
2
3
2
0.1
0.01
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
IT14349
2
3
5
7
2
3
5
7
2
3
5
0.1
1.0
Drain Current, I -- A
Diode Forward Voltage, V -- V
SD
IT14348
D
SW Time -- I
D
Ciss, Coss, Crss -- V
DS
5
1000
V
=15V
f=1MHz
DD
=4.5V
7
3
2
V
GS
5
Ciss
3
2
100
7
5
100
3
2
7
5
t (on)
d
10
3
2
7
5
3
2
0.01
10
0
5
10
15
20
25
30
IT14351
2
3
5
7
2
3
5
7
2
3
5 7
10
0.1
1.0
Drain Current, I -- A
IT14350
Drain-to-Source Voltage, V
-- V
D
DS
V
-- Qg
A S O
GS
3
2
4.5
I
=16A (PW≤10μs)
V
I
=15V
=4A
DP
DS
4.0
3.5
D
10
7
5
I
=4A
D
3
2
3.0
2.5
2.0
1.5
1.0
1.0
7
5
Operation in this area
3
2
is limited by R (on).
DS
0.1
7
5
3
2
Ta=25°C
0.5
0
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
0.01
0.1
0
1
2
3
4
5
6
2
3
5
7
2
3
5
7
2
3
5
1.0
10
Total Gate Charge, Qg -- nC
IT14352
Drain-to-Source Voltage, V
-- V
IT15325
DS
No. A1648-3/4
CPH3448
P
-- Ta
D
1.2
1.0
0.8
0.6
0.4
When mounted on ceramic substrate
(900mm2×0.8mm)
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT15326
Note on usage : Since the CPH3448 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
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independent device, the customer should always evaluate and test devices mounted in the customer's
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This catalog provides information as of September, 2010. Specifications and information herein are subject
to change without notice.
PS No. A1648-4/4
相关型号：
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