CPH3455-TL-H [ONSEMI]
单 N 沟道，功率 MOSFET，35V，3A，104mΩ;
| 型号： | CPH3455-TL-H |
| 厂家： | 
ONSEMI |
| 描述： | 单 N 沟道，功率 MOSFET，35V，3A，104mΩ |
| 文件： | 总7页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
35 V
104 mW @ 10 V
173 mW @ 4.5 V
3 A
35 V, 104 mW, 3 A
208 mW @ 4 V
CPH3455
Description
This Power MOSFET is produced using onsemi’s trench
technology, which is specifically designed to minimize gate charge
and low on resistance. This device is suitable for applications with
low gate charge driving or low on resistance requirements.
CPH3
CASE 318BA
Features
ELECTRICAL CONNECTION
• Low On−Resistance
N−Channel
• 4V Drive
• Pb−Free, Halogen Free and RoHS Compliance
3
Typical Applications
• Load Switch
• Motor Drive
1
1: Gate
2: Source
3: Drain
MAXIMUM RATINGS (T = 25°C unless otherwise noted) (Note 1)
J
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current (DC)
Symbol
Value
35
Unit
V
2
V
DSS
V
GSS
20
V
MARKING DIAGRAM
I
D
3
A
Drain Current (Pulse)
PW ≤ 10 ms, duty cycle ≤ 1%
I
12
A
DP
Power Dissipation
P
1
W
D
LM
Y
MW
When mounted on ceramic substrate
2
(900 mm x 0.8 mm)
Junction Temperature
Storage Temperature
T
150
°C
°C
j
T
stg
−55 to +150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. This product is designed to “ESD immunity <200 V*”, so please take care
when handling.
LM
Y
M
W
= Specific Device Code
= Year
= Month
= Week
*Machine Model
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Ambient
R
125
°C/W
q
JA
When mounted on ceramic substrate
2
(900 mm x 0.8 mm)
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
September, 2022 − Rev. 4
CPH3455/D
CPH3455
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
I = 1 mA, V = 0 V
D
Min
35
−
Typ
−
Max
−
Unit
V
Drain to Source Breakdown Voltage
Zero–Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
V
(BR)DSS
GS
I
V
V
V
V
I
= 35 V, V = 0 V
−
1
mA
mA
V
DSS
DS
GS
DS
DS
GS
I
=
16 V, V = 0 V
−
10
2.6
−
GSS
DS
V
GS(th)
= 10 V, I = 1 mA
1.2
−
−
1.7
80
D
Forward Transconductance
g
FS
= 10 V, I = 1.5 A
S
D
Static Drain to Source On−State
R
R
R
1
2
3
= 1.5 A, V = 10 V
−
104
173
208
−
mW
mW
mW
pF
DS(on)
DS(on)
DS(on)
D
GS
Resistance
I
D
I
D
= 0.75 A, V = 4.5 V
−
123
148
186
36
GS
= 0.75 A, V = 4 V
−
GS
Input Capacitance
Ci
SS
V
DS
= 20 V, f = 1 MHz
−
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Co
−
−
SS
Cr
−
22
−
SS
t
See specified Test Circuit
−
4.2
4.7
15
−
ns
d(on)
t
r
−
−
Turn−Off Delay Time
Fall Time
t
−
−
d(off)
t
f
−
5.7
4
−
Total Gate Charge
Q
V
DS
= 20 V, V = 10 V, I = 3 A
−
−
nC
V
g
GS
D
Gate−to−Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
Q
Q
−
0.9
0.7
0.86
−
gs
gd
SD
−
−
V
I
S
= 3 A, V = 0 V
−
1.2
GS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
SWITCHING TIME TEST CIRCUIT
V
DD
= 15 V
V
IN
I
= 1.5 A
L
10 V
D
0 V
R = 10 W
V
IN
D
V
OUT
PW = 10 ms
D.C.≤ 1%
G
50 ms
PG
S
CPH3455
Figure 1. Switching Time Test Circuit
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2
CPH3455
TYPICAL CHARACTERISTICS
3.0
2.5
4.0
8.0 V
V
DS
= 10 V
T = −25°C
A
10.0 V
3.5
3.0
2.5
4.0 V
4.5 V
6.0 V
16.0 V
2.0
1.5
2.0
1.5
1.0
−25°C
1.0
0.5
0
V
= 3.0 V
GS
T = 75°C
A
25°C
3.5 4.0
3.0
0.5
0
1.5 2.0
4.5
2.5
0
0.5 1.0
0.4 0.5
0.9
1.0
0
0.1 0.2 0.3
0.6
0.8
0.7
V
DS
, Drain−to−Source Voltage (V)
Figure 2. ID − VDS
V
GS
, Gate−to−Source Voltage (V)
Figure 3. ID − VGS
300
270
240
300
270
240
T = 25°C
A
V
GS
= 0 V
V
GS
= 4.5 V
ID = 0.75 A
210
180
210
180
V
GS
= 4 V
1.5 A
ID = 0.75 A
150
120
90
150
120
90
I
D
= 0.75 A
V
GS
= 10 V
ID = 1.5 A
60
30
60
30
0
0
14
10 12
16 18
−60 −40 −20
0
20 40 60 80 100 120 140 160
2
4
6
8
0
V
GS
, Gate−to−Source Voltage (V)
T , Ambient Temperature (5C)
A
Figure 5. RDS(on) − TA
Figure 4. RDS(on) − VGS
,
10
7
5
10
7
V
= 0 V
V
DS
= 10 V
GS
5
3
2
3
2
T = 75°C
A
1.0
7
T = −25°C
A
5
1.0
7
3
25°C
−25°C
2
75°C
5
0.1
7
25°C
3
2
5
3
2
0.1
0.01
0.01
1.2
1.0
2
3
5
7 0.1
2
3
5 7 1.0
2 3
7 10
5
0
0.4
0.6
0.8
0.2
V
SD
, Forward Diode Voltage (V)
Figure 7. IS − VSD
I , Drain Current (A)
D
Figure 6. gFS − ID
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3
CPH3455
TYPICAL CHARACTERISTICS (continued)
1000
100
7
5
f = 1 MHz
V
DD
V
GS
= 15 V
= 10 V
7
5
3
2
3
2
C
iss
t
d(off)
100
10
7
5
t
r
7
5
t
f
t
C
d(on)
oss
3
2
3
2
C
rss
1.0
10
0.1
2
3
5
7
1.0
2
3
5
7 10
0
5
10
15
20
25
30
35
I , Drain Current (A)
D
V
DS
, Drain−to−Source Voltage (V)
Figure 9. VDS − Ciss, Coss, Crss
Figure 8. Time (SW) − ID
100
7
10
V
= 20 V
= 3 A
GS
5
9
8
7
I
D
3
2
I
= 12 A (PW ≤ ms)
DP
10
7
1 ms
100 ms
I
D
= 3 A
5
6
5
4
3
10 ms
2
100 ms
1.0
7
5
Operation in this area
is limited by R
DS(on)
3
2
3
2
DC operation
= 25°C
T
= 25°C
0.1
A
7
T
Single Pulse
A
5
3
1
When mounted on ceramic substrate
2
2
(900 mm x 0.8 mm)
0
0.01
5 7
2
3
2
3
2
3
5
7
2
3
7
5
5 7
10
3.5
2.5 3.0
4.0 4.5
100
0
0.5 1.0
1.5 2.0
0.01
0.1
1.0
Q , Total Gate Charge (nC)
V
DS
, Drain to Source Voltage (V)
Figure 11. S O A
g
Figure 10. VGS − Qg
1.4
1.2
When mounted on ceramic substrate
2
(900 mm x 0.8 mm)
1.0
0.8
0.6
0.4
0.2
0
160
0
20
40
60
80
100 120 140
T , Ambient Temperature (5C)
A
Figure 12. PD − T
A
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4
CPH3455
TYPICAL CHARACTERISTICS (continued)
1000
7
5
3
2
100
Duty Cycle = 0.5
7
5
3
0.2
0.1
2
10
7
5
3
0.05
0.02
0.01
2
1.0
7
5
3
When mounted on ceramic substrate
Single Pulse
2
(900 mm x 0.8 mm)
2
0.1
0.000001
2
3
5
7 0.000012
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
10
0.0001
0.001
0.01
0.1
1.0
P Pulse Time (s)
t
Figure 13. RqJA − Pulse Time
DEVICE ORDERING INFORMATION
†
Device
Marking
Package
Shipping
CPH3455−TL−H
LM
CPH3
3000 / Tape & Reel
SC−59, SOT−23, TO−236
(Pb−Free / Halogen Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*Note on usage : Since the CPH3455 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
CPH3
CASE 318BA
ISSUE O
DATE 30 NOV 2011
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON65437E
CPH3
PAGE 1 OF 1
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