CPH5617-TL-E [ONSEMI]
N-Channel Small Signal MOSFET, 30V, 150mA, 3.7Ω, Dual CPH5;
| 型号： | CPH5617-TL-E |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Small Signal MOSFET, 30V, 150mA, 3.7Ω, Dual CPH5 |
| 文件： | 总6页 (文件大小：260K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN7370C
CPH5617
N-Channel Power MOSFET
http://onsemi.com
Ω
30V, 150mA, 3.7 , Dual CPH5
Features
•
Low ON-resistance
•
Ultrahigh-speed switching
•
1.5V drive
•
Composite type with 2 MOSFETs contained in the one package, improving the mounting efficiency greatly
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
30
±10
150
600
0.25
150
DSS
V
V
GSS
I
mA
mA
W
D
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW 10 s, duty cycle 1%
≤ μ ≤
DP
P
D
Tch
°C
Tstg
--55 to +150
°C
This product is designed to “ESD immunity < 200V ”, so please take care when handling.
*
Machine Model
*
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: CPH5
7017A-004
• JEITA, JEDEC
: SC-74A, SOT-25
• Minimum Packing Quantity : 3,000 pcs./reel
0.15
0.05
2.9
CPH5617-TL-E
Packing Type : TL
Marking
5
4
3
2
TL
1
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
0.95
0.4
Electrical Connection
5
4
3
CPH5
1
2
Semiconductor Components Industries, LLC, 2013
August, 2013
82113 TKIM TC-00002980/71112 TKIM/N1109PE TKIM/90503 TSIM TA-3722 No.7370-1/6
CPH5617
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
30
V
μA
μA
V
(BR)DSS
D
GS
=30V, V =0V
I
I
V
V
V
V
10
DSS
DS
GS
DS
DS
GS
=±8V, V =0V
DS
±10
1.3
GSS
V
(off)
GS
=10V, I =100μA
0.4
D
Forward Transfer Admittance
| yfs |
=10V, I =80mA
0.15
0.22
2.9
S
D
R
R
R
(on)1
(on)2
(on)3
I
I
I
=80mA, V =4V
GS
3.7
5.2
Ω
DS
DS
DS
D
D
D
Static Drain to Source On-State Resistance
=40mA, V =2.5V
GS
3.7
Ω
=10mA, V =1.5V
GS
6.4
12.8
Ω
Input Capacitance
Ciss
7.0
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=10V, f=1MHz
5.9
DS
2.3
t
t
t
t
(on)
19
d
r
65
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
155
120
1.58
0.26
0.31
0.87
d
f
Total Gate Charge
Qg
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
DS
=10V, V =10V, I =150mA
GS
D
V
SD
I =150mA, V =0V
S GS
1.2
Switching Time Test Circuit
V
=15V
DD
V
IN
4V
0V
I
=80mA
D
R =187.5Ω
L
V
D
V
OUT
IN
PW=10μs
D.C.≤1%
G
P.G
50Ω
CPH5617
S
Ordering Information
Device
Package
CPH5
Shipping
3,000pcs./reel
memo
CPH5617-TL-E
Pb Free
No.7370-2/6
CPH5617
I
D
-- V
I
D
-- V
GS
DS
0.30
0.25
0.20
0.15
0.10
0.16
V
=10V
DS
0.14
0.12
0.10
0.08
3.5V
4.0V
V
=1.5V
GS
0.06
0.04
0.05
0
0.02
0
0
1.0
1.5
2.0
3.0
IT00030
0.5 Gate to Source Voltage, V
-- V2.5
V
0
0.2
0.4
0.6
0.8
-- V
1.0
IT00029
Drain to Source Voltage, V
GS
DS
R
(on) -- V
R
(on) -- I
D
DS
GS
DS
10
7
10
9
Ta=25°C
=4V
GS
8
7
5
6
80mA
Ta=75°C
25°C
5
4
3
2
3
2
I
=40mA
D
--25°C
1
0
1.0
2
3
5
7
2
3
5
0
1
2
4
5
6
7
8
9
10
Gate 3to Source Voltage, V
-- V
Drain Current, I -- A
IT00032
0.01
0.1
D
IT00031
GS
R
(on) -- I
R
(on) -- I
DS D
DS
D
10
100
V
=1.5V
V
=2.5V
GS
GS
7
5
7
5
3
2
Ta=75°C
25°C
--25°C
10
3
2
Ta=75°C
--25°C
7
5
25°C
3
2
1.0
1.0
0.001
2
3
5
7
2
3
5
2
3
5
7
2
3
0.01
0.1
D
0.01
Drain Current, I -- A
Drain Current, I -- A
IT00033
IT00034
D
R
(on) -- Ta
yfs -- I
DS
D
1.0
7
V
=10V
DS
7
5
6
5
4
3
2
3
2
0.1
25°C
7
5
3
2
1
0
0.01
0.01
--60 --40
0
20
40
60
100
140 160
IT00035
2
3
5
7
2
3
5
--20 Ambient Temperature, 8T0a -- °C 120
Drain Current, I -- A
0.1
D
IT00036
No.7370-3/6
CPH5617
I
S
-- V
SW Time -- I
SD
D
1000
5
V
V
=15V
V
=0V
DD
=4V
GS
7
GS
3
2
5
3
2
0.1
100
7
5
7
5
3
2
3
2
t (on)
d
0.01
0.5
10
0.01
2
3
5
7
2
0.6
0.7
0.8
0.9
1.0
1.1
1.2
IT00037
0.1
Diode Forward Voltage, V
SD
-- V
IT00038
Drain Current, I -- A
D
Ciss, Coss, Crss -- V
V
-- Qg
DS
GS
100
10
f=1MHz
V
=10V
DS
7
9
8
7
6
5
4
3
2
I =150mA
D
5
3
2
10
7
5
3
2
1
0
1.0
0
2
4
6
8
10
12
14
16
18
20
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IT00040
Drain to Source Voltage, V
-- V
IT00039
Total Gate Charge, Qg -- nC
DS
P
-- Ta
D
0.30
0.25
0.20
0.15
0.10
0.05
0
0
20
40
60
80
100
120
140
160
Amibient Temperature, Ta -- °C
IT01962
No.7370-4/6
CPH5617
Outline Drawing
Land Pattern Example
CPH5617-TL-E
Mass (g) Unit
Unit: mm
0.02
mm
* For reference
0.6
0.95
0.95
No.7370-5/6
CPH5617
Note on usage : Since the CPH5617 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.7370-6/6
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