CPH6341-TL-W [ONSEMI]
P 沟道，功率 MOSFET，-30V，-5A，59mΩ;
| 型号： | CPH6341-TL-W |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，功率 MOSFET，-30V，-5A，59mΩ |
| 文件： | 总6页 (文件大小：1076K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1084B
CPH6341
P-Channel Power MOSFET
http://onsemi.com
–
–
Ω
30V, 5A, 59m , Single CPH6
Features
•
Low ON-resistance
•
•
•
High-speed switching
4V drive
Protection diode in
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
--30
Unit
V
V
V
DSS
GSS
±20
V
I
I
--5
A
D
Drain Current (Pulse)
PW 10 s, duty cycle 1%
--20
A
≤
m
≤
DP
Allowable Power Dissipation
Channel Temperature
Storage Temperature
P
When mounted on ceramic substrate (900mm2 0.8mm)
1.6
W
°C
°C
×
D
Tch
150
Tstg
--55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: CPH6
7018A-003
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
2.9
0.15
0.05
CPH6341-TL-E
CPH6341-TL-W
6
5
4
3
Packing Type: TL
Marking
TL
1
2
0.95
1 : Drain
2 : Drain
3 : Gate
0.4
Electrical Connection
4 : Source
5 : Drain
6 : Drain
1, 2, 5, 6
CPH6
3
4
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
January, 2014
11614HK TC-00002818/61312 TKIM/30508PE TIIM No. A1084-1/6
CPH6341
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
--30
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=-- 1mA, V =0V
V
mA
mA
V
(BR)DSS
D
GS
=-- 30V, V =0V
I
I
V
V
V
V
--1
DSS
DS
GS
DS
DS
GS
=±16V, V =0V
DS
±10
GSS
V
(off)
=-- 10V, I =-- 1mA
--1.2
2.8
--2.6
GS
| yfs |
D
Forward Transfer Admittance
=-- 10V, I =-- 3A
4.8
45
S
D
R
R
R
(on)1
(on)2
(on)3
I
I
I
=-- 3A, V =-- 10V
GS
59
100
115
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
DS
DS
D
D
D
Static Drain-to-Source On-State Resistance
=-- 1.5A, V =-- 4.5V
GS
71
=-- 1.5 A, V =-- 4V
GS
82
Input Capacitance
Ciss
430
105
75
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--10V, f=1MHz
DS
t (on)
d
7.5
26
t
r
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
t (off)
d
45
t
35
f
Total Gate Charge
Qg
10
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=-- 15V, V =-- 10V, I =-- 5A
DS GS
2.0
2.5
--0.87
D
V
I =-- 5A, V =0V
GS
--1.2
SD
S
Switching Time Test Circuit
V
= --15V
DD
V
IN
0V
--10V
I
= --3A
D
V
IN
R =5Ω
L
D
V
OUT
PW=10ms
D.C.≤1%
G
CPH6341
P.G
50Ω
S
Ordering Information
Device
Package
CPH6
Shipping
3,000pcs./reel
memo
CPH6341-TL-E
Pb-Free
CPH6341-TL-W
Pb-Free and Halogen Free
No. A1084-2/6
CPH6341
I
-- V
I
-- V
GS
D
DS
D
--5.0
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--6
--5
--4
--3
--2
V
= --10V
DS
--1
0
--0.5
0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
Drain-to-Source Voltage, V
-- V
IT13379
Gate-to-Source Voltage, V
-- V
IT13380
DS
GS
R
(on) -- V
R
DS
(on) -- Ta
DS
GS
160
140
120
100
80
160
140
120
100
80
Ta=25°C
I = --1.5A
D
--3.0A
60
60
40
40
20
0
20
0
0
--2
--4
--6
--8
--10
--12
--14
--16
--60 --40 --20
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
Gate-to-Source Voltage, V
-- V
IT13381
IT13382
GS
| yfs | -- I
I
-- V
S SD
D
--10
7
10
7
V
= --10V
V
=0V
DS
GS
5
5
3
2
3
2
--1.0
7
5
1.0
7
3
2
5
--0.1
7
5
3
2
3
2
0.1
--0.01
--0.01
--0.2
2
3
5
7
2
3
5
7
2
3
5
7
--0.4
--0.6
--0.8
--1.0
--1.2
--0.1
--1.0
--10
Drain Current, I -- A
D
IT13383
Diode Forward Voltage, V -- V
SD
IT13384
Ciss, Coss, Crss -- V
SW Time -- I
DS
D
2
1000
V
V
= --15V
= --10V
GS
f=1MHz
DD
7
5
100
7
5
3
2
3
2
10
100
t (on)
d
7
5
7
5
3
2
3
2
3
5
7
2
3
5
7
0
--5
--10
--15
--20
--25
--30
IT13386
--0.1
--1.0
--10
Drain Current, I -- A
IT13385
Drain-to-Source Voltage, V
-- V
D
DS
No. A1084-3/6
CPH6341
V
-- Qg
A S O
GS
--10
--9
--8
--7
--6
--5
--4
--3
--2
5
V
= --15V
DS
3
2
I
= --20A
PW≤10ms
DP
I = --5A
D
--10
7
5
I = --5A
D
3
2
--1.0
7
5
3
2
Operation in this
area is limited by R (on).
DS
--0.1
7
5
Ta=25°C
Single pulse
3
2
--1
0
When mounted on ceramic substrate
(900mm2✕0.8mm)
--0.01
--0.01
0
1
2
3
4
5
6
7
8
9
10
2
3
5
7
2
3
5
7
--1.0
2
3
5
7
--10
2
3
5 7
--0.1
Total Gate Charge, Qg -- nC
IT13387
Drain-to-Source Voltage, V
-- V
IT13388
DS
P
-- Ta
D
2.0
When mounted on ceramic substrate
(900mm2✕0.8mm)
1.6
1.5
1.0
0.5
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT13389
No. A1084-4/6
CPH6341
Outline Drawing
Land Pattern Example
CPH6341-TL-E, CPH6341-TL-W
Mass (g) Unit
Unit: mm
0.015
mm
* For reference
0.6
0.95
0.95
No. A1084-5/6
CPH6341
Note on usage : Since the CPH6341 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1084-6/6
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