CPH6350-TL-E [ONSEMI]
P 沟道，功率 MOSFET，-30V，-6A，43mΩ;
| 型号： | CPH6350-TL-E |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，功率 MOSFET，-30V，-6A，43mΩ |
| 文件： | 总6页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1529B
CPH6350
P-Channel Power MOSFET
http://onsemi.com
–
–
Ω
30V, 6A, 43m , Single CPH6
Features
•
4V drive
•
Low ON-resistance
•
Protection diode in
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
--30
Unit
V
V
DSS
V
±20
V
GSS
I
-- 6
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW 10 s, duty cycle 1%
When mounted on ceramic substrate (900mm2 0.8mm)
--24
A
≤
μ
≤
DP
P
1.6
W
°C
°C
×
D
Tch
150
Tstg
--55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Ordering & Package Information
Device
Package
Shipping
memo
7018A-003
CPH6
3,000pcs./
reel
CPH6350-TL-E
Pb-Free
SC-74, SOT-26, SOT-457
Pb-Free
and
Halogen Free
2.9
0.15
0.05
CPH6350-TL-E
CPH6350-TL-W
CPH6
3,000pcs./
reel
CPH6350-TL-W
SC-74, SOT-26, SOT-457
6
5
4
3
Packing Type: TL
Marking
1
2
0.95
1 : Drain
2 : Drain
3 : Gate
0.4
TL
4 : Source
5 : Drain
6 : Drain
Electrical Connection
1, 2, 5, 6
CPH6
3
4
Semiconductor Components Industries, LLC, 2013
August, 2013
82813 TKIM/71112 TKIM TC-00002780/80509PE TKIM TC-00002052 No. A1529-1/6
CPH6350
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
--30
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
V
I
=-- 1mA, V =0V
V
μA
μA
V
(BR)DSS
D
GS
=-- 30V, V =0V
I
I
V
V
V
V
-- 1
DSS
DS
GS
DS
DS
GS
=±16V, V =0V
DS
±10
GSS
V
(off)
GS
=-- 10V, I =-- 1mA
--1.2
--2.6
D
Forward Transfer Admittance
| yfs |
=-- 10V, I =-- 3A
5.4
S
D
R
R
R
(on)1
(on)2
(on)3
I
I
I
=-- 3A, V =-- 10V
GS
33
58
43
82
86
mΩ
mΩ
mΩ
pF
pF
pF
ns
DS
DS
DS
D
D
D
Static Drain to Source On-State Resistance
=-- 1.5A, V =-- 4.5V
GS
=-- 1.5A, V =-- 4V
GS
61
Input Capacitance
Ciss
600
145
110
7.4
27
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--10V, f=1MHz
DS
t
t
t
t
(on)
d
r
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
62
ns
d
f
45
ns
Total Gate Charge
Qg
13
nC
nC
nC
V
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=--15V, V =--10V, I =--6A
GS
1.8
3.2
--0.87
DS
D
V
SD
I =--6A, V =0V
S GS
--1.2
Switching Time Test Circuit
V = --15V
DD
V
IN
0V
--10V
I
= --3A
D
V
IN
R =5Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
CPH6350
P. G
50Ω
S
No. A1529-2/6
CPH6350
I
D
-- V
DS
I
-- V
D GS
--3.0
--2.5
--2.0
--1.5
--1.0
--9
--8
--7
--6
--5
--4
--3
--2
V
DS
= --10V
--0.5
0
--1
0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
Drain to Source Voltage, V
DS
-- V
IT14855
Gate to Source Voltage, V
GS
-- V
IT14856
R
(on) -- V
R
(on) -- Ta
DS
GS
DS
200
180
160
140
120
100
80
100
90
80
70
60
50
40
30
Ta=25°C
I
= --1.5A
D
--3.0A
60
40
20
10
20
0
0
--2
--4
--6
--8
--10
--12
--14
--16
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate to Source Voltage, V
GS
-- V
IT14857
Ambient Temperature, Ta -- °C
IT14858
| yfs | -- I
I
-- V
D
S SD
2
2
V
=0V
V
= --10V
GS
DS
--10
7
5
3
2
10
7
5
--1.0
3
2
7
5
3
2
1.0
7
--0.1
7
5
5
3
2
3
2
--0.01
7
5
3
2
0.1
7
--0.001
2
3
5
7
2
3
5
7
--1.0
2
3
5
7
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT14860
--0.01
--0.1
Drain Current, I -- A
IT14859
Diode Forward Voltage, V -- V
SD
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
100
2
f=1MHz
t
d(off)
7
5
1000
t
f
7
5
3
2
3
2
10
7
5
100
V
V
= --15V
= --10V
7
5
DD
GS
3
2
3
5
7
2
3
5
7
2
0
--5
--10
--15
--20
--25
--30
IT14862
--0.1
--1.0
--10
IT14861
Drain Current, I -- A
Drain to Source Voltage, V -- V
DS
D
No. A1529-3/6
CPH6350
A S O
= --24A (PW≤10μs)
V
GS
-- Qg
5
--10
--9
--8
--7
--6
--5
--4
--3
--2
V
I
= --10V
I
I
DS
= --6A
DP
3
2
D
--10
7
5
= --6A
D
3
2
--1.0
7
5
3
2
Operation in this
area is limited by R (on).
DS
--0.1
7
5
Ta=25°C
3
2
--1
0
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
--0.01
--0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
0
1
2
3
4
5
6
7
8
9
10 11 12 13
IT14863
--0.1
--1.0
--10
Drain to Source Voltage, V
-- V
IT14864
Total Gate Charge, Qg -- nC
DS
P
-- Ta
D
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
When mounted on ceramic substrate
(900mm2×0.8mm)
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT14865
No. A1529-4/6
CPH6350
Outline Drawing
Land Pattern Example
CPH6350-TL-E, CPH6350-TL-W
Mass (g) Unit
Unit: mm
0.015
mm
* For reference
0.6
0.95
0.95
No. A1529-5/6
CPH6350
Note on usage : Since the CPH6350 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1529-6/6
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