CPH6354-TL-W [ONSEMI]
单 P 沟道功率 MOSFET，-60V，-4A，100mΩ;
| 型号： | CPH6354-TL-W |
| 厂家： | 
ONSEMI |
| 描述： | 单 P 沟道功率 MOSFET，-60V，-4A，100mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：1116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CPH6354
Power MOSFET
www.onsemi.com
–
–
Ω
60V, 100m , 4A, Single P-Channel
Features
•
ON-resistance R (on)1=77m (typ.)
Ω
DS
•
•
•
4V Drive
ESD Diode - Protected Gate
Pb-Free, Halogen Free and RoHS Compliance
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Value
--60
Unit
V
V
V
DSS
GSS
±20
V
I
I
--4
A
D
Drain Current (Pulse)
Power Dissipation
PW 10 s, duty cycle 1%
--16
A
≤
m
≤
DP
P
When mounted on ceramic substrate (1500mm2 0.8mm)
1.6
W
°C
°C
×
D
Junction Temperature
Storage Temperature
Tj
150
Tstg
--55 to +150
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Symbol
Value
78.1
Unit
C/W
Junction to Ambient
R
°
JA
θ
When mounted on ceramic substrate (1500mm2 0.8mm)
×
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: CPH6
7018A-003
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
CPH6354-TL-H
CPH6354-TL-W
2.9
0.15
0.05
Packing Type: TL
Marking
6
5
4
3
TL
1
2
0.95
1 : Drain
2 : Drain
3 : Gate
0.4
Electrical Connection
1, 2, 5, 6
4 : Source
5 : Drain
6 : Drain
CPH6
3
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
4
© Semiconductor Components Industries, LLC, 2014
Publication Order Number :
1
November 2014 - Rev. 2
CPH6354/D
CPH6354
at Ta=25°C
Electrical Characteristics
Value
typ
Parameter
Symbol
Conditions
Unit
min
--60
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
V
I
=-- 1mA, V =0V
V
mA
mA
V
(BR)DSS
D
GS
=-- 60V, V =0V
I
I
V
V
V
V
--1
DSS
DS
GS
DS
DS
GS
=±16V, V =0V
DS
±10
GSS
V
g
(th)
=-- 10V, I =-- 1mA
--1.2
--2.6
GS
D
Forward Transconductance
=-- 10V, I =-- 2A
4.8
S
FS
D
R
(on)1
(on)2
(on)3
I
I
I
=-- 2A, V =-- 10V
GS
77
96
100
135
145
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
DS
DS
D
D
D
Static Drain-to-Source On-State Resistance
R
R
=-- 1A, V =-- 4.5V
GS
=-- 1A, V =-- 4V
GS
103
600
60
Input Capacitance
Ciss
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--20V, f=1MHz
DS
50
t (on)
d
5.8
12
t
r
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
t (off)
d
78
t
40
f
Total Gate Charge
Qg
14
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Forward Diode Voltage
Qgs
Qgd
V
=-- 30V, V =-- 10V, I =-- 4A
DS GS
1.6
3.4
--0.84
D
V
I =-- 4A, V =0V
GS
--1.2
SD
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
V
V
= --30V
IN
DD
0V
--10V
I
= --2A
D
V
IN
R =15Ω
L
D
V
OUT
PW=10ms
D.C.≤1%
G
CPH6354
P. G
50Ω
S
ORDERING INFORMATION
Device
Package
CPH6
Shipping
memo
CPH6354-TL-H
3,000pcs./reel
Pb-Free and Halogen Free
CPH6354-TL-W
www.onsemi.com
2
CPH6354
I
-- V
I
-- V
GS
D
DS
D
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--8
--7
--6
--5
--4
--3
--2
V
= --10V
DS
--0.5
0
--1
0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--1
--2
--3
--4
--5
--6
IT16615
Drain-to-Source Voltage, V
DS
-- V
IT16614
Gate-to-Source Voltage, V -- V
GS
R
(on) -- V
R
(on) -- Ta
DS
DS
GS
220
200
180
160
140
120
100
80
300
250
200
150
100
Ta=25°C
I
= --1A
D
--2A
60
40
50
0
20
0
0
--2
--4
--6
--8
--10
--12
--14
--16
--60 --40 --20
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
Gate-to-Source Voltage, V
GS
-- V
IT16616
IT16617
I
-- V
g
-- I
S
SD
FS
D
10
--10
7
5
V
= --10V
V =0V
GS
DS
7
5
3
2
3
2
--1.0
7
5
1.0
7
3
2
5
--0.1
7
5
3
2
3
2
0.1
--0.01
--0.01
2
3
5
7
2
3
5
7
2
3
5
7
--10
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT16619
--0.1
--1.0
Drain Current, I -- A
HD16618
Forward Diode Voltage, V -- V
SD
D
Ciss, Coss, Crss -- V
SW Time -- I
DS
D
100
1000
f=1MHz
7
7
5
5
t
3
2
3
2
f
10
100
7
5
7
5
t (on)
d
3
2
3
2
V
V
= --30V
= --10V
DD
GS
10
1.0
--0.1
2
3
5
7
2
3
5
7
0
--10
--20
--30
--40
--50
--60
IT16621
--1.0
--10
Drain Current, I -- A
IT16620
Drain-to-Source Voltage, V
DS
-- V
D
www.onsemi.com
3
CPH6354
S O A
V
-- Qg
GS
--10
--9
--8
--7
--6
--5
--4
--3
--2
--100
7
V
= --30V
= --4A
DS
5
3
2
I
D
I
= --16A (PW≤10ms)
DP
--10
7
5
3
2
I = --4A
D
--1.0
7
5
3
2
Operation in this area
--0.1
is limited by R (on).
DS
7
5
3
2
Ta=25°C
--1
0
Single pulse
When mounted on ceramic substrate (1500mm2×0.8mm)
--0.01
0
2
4
6
8
10
12
14
16
2
3
5 7
--0.1
2
3
5 7
--1.0
2
3
5 7
2
3
5 7
--100
--0.01
--10
-- V HD16623
Total Gate Charge, Qg -- nC
IT16622
Drain-to-Source Voltage, V
DS
P
-- Ta
D
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
When mounted on ceramic substrate
(1500mm2×0.8mm)
0.2
0
0
25
50
75
100
125
150
175
Ambient Temperature, Ta -- °C
HD16624
R
-- Pulse Time
θJA
100
7
Duty Cycle=0.5
0.2
5
3
2
10 0.1
7
0.05
5
3
2
0.02
0.01
1.0
7
5
3
2
0.1
7
5
3
2
When mounted on ceramic substrate
(1500mm2×0.8mm)
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
10
HD141028
0.000001
0.0001
0.001
0.01
0.1
1.0
0.00001
Pulse Time, PT -- s
www.onsemi.com
4
CPH6354
Outline Drawing
Land Pattern Example
CPH6354-TL-H, CPH6354-TL-W
Mass (g) Unit
Unit: mm
0.015
mm
* For reference
0.6
0.95
0.95
Note on usage : Since the CPH6354 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not
designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
www.onsemi.com
5
相关型号：
©2020 ICPDF网 联系我们和版权申明