CPH6429 [ONSEMI]
TRANSISTOR POWER, FET, FET General Purpose Power;
| 型号： | CPH6429 |
| 厂家： | 
ONSEMI |
| 描述： | TRANSISTOR POWER, FET, FET General Purpose Power |
| 文件： | 总4页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENN8081
N-Channel Silicon MOSFET
CPH6429
Ultrahigh-Speed Switching Applications
Features
• Low ON-resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
V
60
±10
2
DSS
Gate-to-Source Voltage
Drain Current (DC)
V
GSS
I
D
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (1200mm2✕0.8mm)
8
A
DP
P
1.6
150
W
°C
°C
D
Tch
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0
D GS
60
V
µA
µA
V
(BR)DSS
I
V
V
V
V
=60V, V =0
GS
1
±10
1.3
DSS
DS
GS
DS
DS
I
=±8V, V =0
DS
GSS
V
(off)
GS
=10V, I =1mA
0.4
1.8
D
Forward Transfer Admittance
yfs
=10V, I =1A
3.6
170
190
325
29
S
D
R
R
(on)1
DS
I
I
=1A, V =4V
GS
220
270
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
D
D
Static Drain-to-Source On-State Resistance
(on)2
DS
=1A, V =2.5V
GS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Ciss
V
V
V
=20V, f=1MHz
DS
=20V, f=1MHz
DS
=20V, f=1MHz
DS
Coss
Crss
21
t (on)
d
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
11
t
17
r
Turn-OFF Delay Time
Fall Time
t (off)
d
40
t
27
f
Marking : ZF
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Publication Order Number:
www.onsemi.com
CPH6429/D
CPH6429
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Total Gate Charge
Qg
V
V
V
=30V, V =4V, I =2A
4.2
nC
nC
nC
V
DS
DS
DS
GS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
=30V, V =4V, I =2A
1.1
GS
D
=30V, V =4V, I =2A
GS
1.1
D
V
I =2A, V =0
S
0.86
1.2
SD
GS
Package Dimensions
unit : mm
Switching Time Test Circuit
2151A
V
=30V
DD
V
IN
0.15
2.9
4V
0V
5
6
4
I
=1A
D
V
IN
R =30Ω
L
0.05
D
V
OUT
PW=10µs
D.C.≤1%
G
1
2
3
0.95
1 : Drain
2 : Drain
3 : Gate
CPH6429
P.G
50Ω
S
4 : Source
5 : Drain
6 : Drain
0.4
SANYO : CPH6
I
-- V
I
-- V
GS
D
DS
D
4.0
3.5
3.0
2.5
2.0
1.5
1.0
2.0
V =10V
DS
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
3.0V
2.5V
V
=1.5V
GS
0.5
0
0.2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
IT06813
Drain-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V -- V
GS
IT06812
DS
R
DS
(on) -- V
R (on) -- Ta
DS
GS
400
350
300
250
200
150
100
500
400
300
200
Ta=25°C
=1.0A
I
D
100
0
50
0
0
2
4
6
8
10
IT06814
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
Ambient Temperature, Ta -- °C
IT06815
GS
Rev.0 I Page 2 of 4 I www.onsemi.com
CPH6429
y
fs -- I
I
-- V
F SD
D
10
7
5
V =10V
DS
V =0
GS
7
3
2
5
3
2
1.0
7
5
3
2
1.0
7
5
0.1
7
5
3
2
3
2
0.1
0.01
0.01
0.2
2
3
5
7
2
3
5
7
2
3
5
0.4
0.6
0.8
1.0
1.2
IT06817
0.1
1.0
Drain Current, I -- A
IT06816
Diode Forward Voltage, V -- V
SD
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
100
1000
f=1MHz
V
V
=30V
=4V
DD
GS
7
7
5
5
Ciss
3
2
3
2
100
7
5
t (on)
d
3
2
10
7
10
5
0.1
7
2
3
5
7
2
3
5
0
5
10
15
20
25
30
1.0
Drain Current, I -- A
IT06818
Drain-to-Source Voltage, V
-- V
IT06819
D
DS
V
-- Qg
A S O
GS
4
10
7
5
V
=30V
DS
<10µs
I =8A
DP
I =2.0A
D
3
2
I =2A
D
3
2
1.0
7
5
3
2
0.1
Operation in this area
7
5
is limited by R (on).
DS
1
0
3
2
Ta=25
°
C
Single pulse
Mounted on a ceramic board (1200mm2✕0.8mm)
0.01
2
3
5 7
2
3
5 7
2
3
5 7
2
3
5 7
100
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.01
0.1
1.0
10
Total Gate Charge, Qg -- nC
IT06820
Drain-to-Source Voltage, V
-- V
IT07336
DS
P
-- Ta
D
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT07337
Rev.0 I Page 3 of 4 I www.onsemi.com
CPH6429
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CPH6429/D
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