D44VH [ONSEMI]

COMPLEMENTARY SILICON POWER TRANSISTORS; 互补硅功率晶体管


型号：	D44VH
厂家：	ONSEMI
描述：	COMPLEMENTARY SILICON POWER TRANSISTORS 互补硅功率晶体管晶体晶体管
文件：	总4页 (文件大小：96K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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by D44VH/D

SEMICONDUCTOR TECHNICAL DATA

These complementary silicon power transistors are designed for high–speed

switching applications, such as switching regulators and high frequency inverters.

The devices are also well–suited for drivers for high power switching circuits.

15 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

80 VOLTS

•

Fast Switching — t = 90 ns (Max)

Key Parameters Specified @ 100 C

Low Collector–Emitter Saturation Voltage —

= 1.0 V (Max) @ 8.0 A

CE(sat)

Complementary Pairs Simplify Circuit Designs

83 WATTS

•

CASE 221A–06

TO–220AB

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Collector–Emitter Voltage

Emitter Base Voltage

CEO

100

7.0

CEV

Collector Current — Continuous

— Peak (1)

Total Power Dissipation @ T = 25 C

Derate above 25 C

Watts

W/ C

0.67

T , T

–55 to 150

Operating and Storage Junction Temperature Range

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

1.5

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

θJC

θJA

62.5

275

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

(1) Pulse Width

6.0 ms, Duty Cycle

50%.

NOTE: All polarities are shown for NPN transistors. For PNP transistors, reverse polarities.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

—

Vdc

Collector–Emitter Sustaining Voltage (1)

CEO(sus)

(I = 25 mAdc, I = 0)

µAdc

Collector–Emitter Cutoff Current

CEV

= Rated V

, V

CEV BE(off)

= 4.0 Vdc)

= 4.0 Vdc, T = 100 C)

—

= Rated V

, V

100

CEV BE(off)

—

µAdc

Emitter Base Cutoff Current

(V = 7.0 Vdc, I = 0)

EBO

ON CHARACTERISTICS (1)

—

DC Current Gain

(I = 2.0 Adc, V

= 1.0 Vdc)

—

(I = 4.0 Adc, V

Vdc

Collector–Emitter Saturation Voltage

(I = 8.0 Adc, I = 0.4 Adc)

CE(sat)

D44VH10

D45VH10

D44VH10

D45VH10

—

0.4

1.0

0.8

1.5

(I = 8.0 Adc, I = 0.8 Adc)

(I = 15 Adc, I = 3.0 Adc, T = 100 C)

Vdc

Base–Emitter Saturation Voltage

(I = 8.0 Adc, I = 0.4 Adc)

BE(sat)

D44VH10

D45VH10

D44VH10

D45VH10

—

1.2

1.0

1.1

1.5

(I = 8.0 Adc, I = 0.8 Adc)

(I = 8.0 Adc, I = 0.4 Adc, T = 100 C)

(I = 8.0 Adc, I = 0.8 Adc, T = 100 C)

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth Product

(I = 0.1 Adc, V = 10 Vdc, f = 20 MHz)

—

MHz

Output Capacitance

(V = 10 Vdc, I = 0, f

= 1.0 MHz)

D44VH10

D45VH10

—

120

275

—

CB test

SWITCHING CHARACTERISTICS

Delay Time

—

250

700

Rise Time

Storage Time

Fall Time

= 20 Vdc, I = 8.0 Adc,

= I = 0.8 Adc)

B1 B2

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2%.

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

SEATING

PLANE

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

–T–

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

INCHES

MIN

MILLIMETERS

DIM

MAX

0.620

0.405

0.190

0.035

0.147

0.105

0.155

0.025

0.562

0.060

0.210

0.120

0.110

0.055

0.255

0.050

–––

MIN

14.48

9.66

4.07

0.64

3.61

2.42

2.80

0.46

12.70

1.15

4.83

2.54

2.04

1.15

5.97

0.00

1.15

–––

MAX

15.75

10.28

4.82

0.88

3.73

2.66

3.93

0.64

14.27

1.52

5.33

3.04

2.79

1.39

6.47

1.27

–––

0.570

0.380

0.160

0.025

0.142

0.095

0.110

0.018

0.500

0.045

0.190

0.100

0.080

0.045

0.235

0.000

0.045

–––

0.080

2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 221A–06

TO–220AB

ISSUE Y

Motorola Bipolar Power Transistor Device Data

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

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Motorola Bipolar Power Transistor Device Data

D44VH/D

◊

D44VH [ONSEMI]

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