DA121TT1 [ONSEMI]

Silicon Switching Diode; 硅开关二极管
DA121TT1
型号: DA121TT1
厂家: ONSEMI    ONSEMI
描述:

Silicon Switching Diode
硅开关二极管

二极管 开关
文件: 总8页 (文件大小:127K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Preferred Device  
http://onsemi.com  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Symbol  
Max  
80  
Unit  
V
3
1
Continuous Reverse Voltage  
Recurrent Peak Forward Current  
Peak Forward Surge Current  
V
R
CATHODE  
ANODE  
I
F
200  
500  
mA  
mA  
I
FM(surge)  
Pulse Width = 10  
s
THERMAL CHARACTERISTICS  
Characteristic  
3
Symbol  
Max  
Unit  
2
Total Device Dissipation,  
P
D
1
(1)  
FR–4 Board  
= 25°C  
225  
mW  
T
A
CASE 463  
SOT–416/SC–75  
STYLE 2  
Derated above 25°C  
1.8  
mW/°C  
°C/W  
Thermal Resistance,  
Junction to Ambient  
R
555  
θJA  
(1)  
Total Device Dissipation,  
(2)  
P
D
FR–4 Board  
= 25°C  
360  
mW  
T
DEVICE MARKING  
A
Derated above 25°C  
2.9  
mW/°C  
°C/W  
Thermal Resistance,  
Junction to Ambient  
R
345  
θJA  
(2)  
6A  
Junction and Storage  
Temperature Range  
T , T  
J stg  
–55 to  
+150  
°C  
(1) FR–4 @ Minimum Pad  
(2) FR–4 @ 1.0 × 1.0 Inch Pad  
ORDERING INFORMATION  
Device  
DA121TT1  
Package  
Shipping  
3000 / Tape & Reel  
SOT–416  
Preferred devices are recommended choices for future use  
and best overall value.  
This document contains information on a new product. Specifications and information  
herein are subject to change without notice.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
May, 2000 – Rev. 1  
DA121TT1/D  
DA121TT1  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
Forward Voltage  
V
F
mV  
(I = 1.0 mA)  
715  
866  
1000  
1250  
F
(I = 10 mA)  
F
(I = 50 mA)  
F
(I = 150 mA)  
F
Reverse Current  
I
R
µA  
(V = 75 V)  
1.0  
50  
30  
R
(V = 75 V, T = 150°C)  
R
R
J
J
(V = 25 V, T = 150°C)  
Capacitance  
(V = 0, f = 1.0 MHz)  
R
C
2.0  
6.0  
45  
pF  
ns  
PC  
V
D
Reverse Recovery Time  
t
rr  
(I = I = 10 mA, R = 50 ) (Figure 1)  
F
R
L
Stored Charge  
(I = 10 mA to V = 6.0 V, R = 500 ) (Figure 2)  
QS  
F
R
L
Forward Recovery Voltage  
(I = 10 mA, t = 20 ns) (Figure 3)  
V
FR  
1.75  
F
r
http://onsemi.com  
2
DA121TT1  
1 ns MAX  
DUT  
500 Ω  
t
t
rr  
10%  
t
if  
50 Ω  
DUTY CYCLE = 2%  
90%  
V
F
I
rr  
100 ns  
Figure 1. Reverse Recovery Time Equivalent Test Circuit  
OSCILLOSCOPE  
R 10 MΩ  
C 7 pF  
DUT  
BAW62  
243 pF  
V
C
500 Ω  
V
CM  
20 ns MAX  
D1  
100 KΩ  
t
10%  
Qa  
C
V
CM  
DUTY CYCLE = 2%  
t
90%  
V
f
400 ns  
Figure 2. Recovery Charge Equivalent Test Circuit  
V
120 ns  
1 KΩ  
450 Ω  
V
90%  
DUT  
50 Ω  
V
fr  
t
10%  
DUTY CYCLE = 2%  
2 ns MAX  
Figure 3. Forward Recovery Voltage Equivalent Test Circuit  
http://onsemi.com  
3
DA121TT1  
10  
100  
10  
T = 150°C  
A
T = 125°C  
A
1.0  
T = 85°C  
A
T = 85°C  
A
0.1  
0.01  
T = 25°C  
A
T = 55°C  
1.0  
0.1  
A
T = 40°C  
A
T = 25°C  
A
0.001  
50  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
10  
20  
30  
40  
V , FORWARD VOLTAGE (VOLTS)  
F
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 4. Forward Voltage  
Figure 5. Leakage Current  
0.68  
0.64  
0.60  
0.56  
0.52  
0
2
4
6
8
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 6. Capacitance  
1.0  
0.1  
D = 0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
0.01  
SINGLE PULSE  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
t, TIME (s)  
1.0  
10  
100  
1000  
Figure 7. Normalized Thermal Response  
http://onsemi.com  
4
DA121TT1  
INFORMATION FOR USING THE SOT-416 SURFACE MOUNT PACKAGE  
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS  
Surface mount board layout is a critical portion of the  
total design. The footprint for the semiconductor packages  
must be the correct size to insure proper solder connection  
interface between the board and the package. With the  
correct pad geometry, the packages will self align when  
subjected to a solder reflow process.  
0.5 min. (3x)  
TYPICAL  
SOLDERING PATTERN  
Unit: mm  
1.4  
SOT–416/SC–75 POWER DISSIPATION  
The power dissipation of the SOT–416/SC–75 is a  
function of the pad size. This can vary from the minimum  
pad size for soldering to the pad size given for maximum  
power dissipation. Power dissipation for a surface mount  
into the equation for an ambient temperature T of 25°C,  
one can calculate the power dissipation of the device which  
in this case is 225 milliwatts.  
A
150°C – 25°C  
555°C/W  
P
=
= 225 milliwatts  
device is determined by T  
, the maximum rated  
D
J(max)  
junction temperature of the die, R  
, the thermal  
θJA  
resistance from the device junction to ambient; and the  
operating temperature, T . Using the values provided on  
The 555°C/W assumes the use of the recommended  
footprint on a glass epoxy printed circuit board to achieve a  
power dissipation of 225 milliwatts. Another alternative  
would be to use a ceramic substrate or an aluminum core  
board such as Thermal Clad . Using a board material such  
as Thermal Clad, a higher power dissipation can be  
achieved using the same footprint.  
A
the data sheet, P can be calculated as follows.  
D
T
– T  
A
J(max)  
P
=
D
R
θJA  
The values for the equation are found in the maximum  
ratings table on the data sheet. Substituting these values  
SOLDERING PRECAUTIONS  
The melting temperature of solder is higher than the rated  
temperature of the device. When the entire device is heated  
to a high temperature, failure to complete soldering within  
a short time could result in device failure. Therefore, the  
following items should always be observed in order to  
minimize the thermal stress to which the devices are  
subjected.  
Always preheat the device.  
The delta temperature between the preheat and  
soldering should be 100°C or less.*  
When preheating and soldering, the temperature of the  
leads and the case must not exceed the maximum  
temperature ratings as shown on the data sheet. When  
using infrared heating with the reflow soldering  
method, the difference should be a maximum of 10°C.  
The soldering temperature and time should not exceed  
260°C for more than 10 seconds.  
When shifting from preheating to soldering, the  
maximum temperature gradient should be 5°C or less.  
After soldering has been completed, the device should  
be allowed to cool naturally for at least three minutes.  
Gradual cooling should be used as the use of forced  
cooling will increase the temperature gradient and  
result in latent failure due to mechanical stress.  
Mechanical stress or shock should not be applied  
during cooling  
* Soldering a device without preheating can cause  
excessive thermal shock and stress which can result in  
damage to the device.  
http://onsemi.com  
5
DA121TT1  
SOLDER STENCIL GUIDELINES  
Prior to placing surface mount components onto a printed  
The stencil opening size for the surface mounted package  
should be the same as the pad size on the printed circuit  
board, i.e., a 1:1 registration.  
circuit board, solder paste must be applied to the pads. A  
solder stencil is required to screen the optimum amount of  
solder paste onto the footprint. The stencil is made of brass  
or stainless steel with a typical thickness of 0.008 inches.  
TYPICAL SOLDER HEATING PROFILE  
For any given circuit board, there will be a group of  
control settings that will give the desired heat pattern. The  
operator must set temperatures for several heating zones,  
and a figure for belt speed. Taken together, these control  
settings make up a heating “profile” for that particular  
circuit board. On machines controlled by a computer, the  
computer remembers these profiles from one operating  
session to the next. Figure NO TAG shows a typical heating  
profile for use when soldering a surface mount device to a  
printed circuit board. This profile will vary among  
soldering systems but it is a good starting point. Factors that  
can affect the profile include the type of soldering system in  
use, density and types of components on the board, type of  
solder used, and the type of board or substrate material  
being used. This profile shows temperature versus time.  
The line on the graph shows the actual temperature that  
might be experienced on the surface of a test board at or  
near a central solder joint. The two profiles are based on a  
high density and a low density board. The Vitronics  
SMD310 convection/infrared reflow soldering system was  
used to generate this profile. The type of solder used was  
62/36/2 Tin Lead Silver with a melting point between  
177189°C. When this type of furnace is used for solder  
reflow work, the circuit boards and solder joints tend to  
heat first. The components on the board are then heated by  
conduction. The circuit board, because it has a large surface  
area, absorbs the thermal energy more efficiently, then  
distributes this energy to the components. Because of this  
effect, the main body of a component may be up to 30  
degrees cooler than the adjacent solder joints.  
STEP 5  
HEATING  
ZONES 4 & 7  
SPIKE”  
STEP 6 STEP 7  
VENT COOLING  
STEP 1  
PREHEAT  
ZONE 1  
STEP 2  
VENT  
SOAK” ZONES 2 & 5  
RAMP”  
STEP 3  
HEATING  
STEP 4  
HEATING  
ZONES 3 & 6  
SOAK”  
205° TO 219°C  
PEAK AT  
SOLDER JOINT  
RAMP”  
200°C  
150°C  
170°C  
DESIRED CURVE FOR HIGH  
MASS ASSEMBLIES  
160°C  
150°C  
SOLDER IS LIQUID FOR  
40 TO 80 SECONDS  
(DEPENDING ON  
140°C  
100°C  
MASS OF ASSEMBLY)  
100°C  
50°C  
DESIRED CURVE FOR LOW  
MASS ASSEMBLIES  
TIME (3 TO 7 MINUTES TOTAL)  
T
MAX  
Figure 8. Typical Solder Heating Profile  
http://onsemi.com  
6
DA121TT1  
PACKAGE DIMENSIONS  
SC–75 (SC–90, SOT–416)  
CASE 463–01  
ISSUE B  
–A–  
S
NOTES:  
2
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3
G
–B–  
MILLIMETERS  
DIM MIN MAX  
INCHES  
1
MIN  
MAX  
0.031  
0.071  
0.035  
0.012  
D 3 PL  
A
B
C
D
G
H
J
K
L
S
0.70  
1.40  
0.60  
0.15  
0.80 0.028  
1.80 0.055  
0.90 0.024  
0.30 0.006  
M
0.20 (0.008)  
B
0.20 (0.008) A  
K
1.00 BSC  
0.039 BSC  
–––  
0.10  
1.45  
0.10  
0.10  
–––  
0.004  
0.010  
0.069  
0.008  
0.25 0.004  
1.75 0.057  
0.20 0.004  
J
C
0.50 BSC  
0.020 BSC  
L
H
STYLE 1:  
PIN 1. BASE  
STYLE 2:  
PIN 1. ANODE  
STYLE 3:  
PIN 1. ANODE  
STYLE 4:  
PIN 1. CATHODE  
2. CATHODE  
3. ANODE  
2. EMITTER  
3. COLLECTOR  
2. N/C  
3. CATHODE  
2. ANODE  
3. CATHODE  
http://onsemi.com  
7
DA121TT1  
Thermal Clad is a trademark of the Bergquist Company.  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes  
withoutfurthernoticetoanyproductsherein. SCILLCmakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticular  
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,  
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.  
SCILLCproductsarenotdesigned, intended, orauthorizedforuseascomponentsinsystemsintendedforsurgicalimplantintothebody, orotherapplications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or  
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold  
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable  
attorneyfees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim  
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.  
PUBLICATION ORDERING INFORMATION  
NORTH AMERICA Literature Fulfillment:  
CENTRAL/SOUTH AMERICA:  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)  
Email: ONlit–spanish@hibbertco.com  
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada  
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada  
Email: ONlit@hibbertco.com  
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support  
Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)  
Toll Free from Hong Kong & Singapore:  
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada  
001–800–4422–3781  
N. American Technical Support: 800–282–9855 Toll Free USA/Canada  
Email: ONlit–asia@hibbertco.com  
EUROPE: LDC for ON Semiconductor – European Support  
German Phone: (+1) 303–308–7140 (M–F 1:00pm to 5:00pm Munich Time)  
Email: ONlit–german@hibbertco.com  
JAPAN: ON Semiconductor, Japan Customer Focus Center  
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031  
Phone: 81–3–5740–2745  
French Phone: (+1) 303–308–7141 (M–F 1:00pm to 5:00pm Toulouse Time)  
Email: ONlit–french@hibbertco.com  
English Phone: (+1) 303–308–7142 (M–F 12:00pm to 5:00pm UK Time)  
Email: ONlit@hibbertco.com  
Email: r14525@onsemi.com  
ON Semiconductor Website: http://onsemi.com  
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781  
For additional information, please contact your local  
Sales Representative.  
*Available from Germany, France, Italy, England, Ireland  
DA121TT1/D  

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