DF08M [ONSEMI]
1.5A桥式整流器;型号: | DF08M |
厂家: | ONSEMI |
描述: | 1.5A桥式整流器 光电二极管 |
文件: | 总7页 (文件大小:300K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
May 2015
DF005M - DF10M
Bridge Rectifiers
Features
• Surge Overload Rating: 50 Amperes Peak
• Glass Passivated Junction.
• Low Leakage.
• UL Certified, UL #E258596.
DIP
Ordering Information
Part Number
DF005M
DF01M
Top Mark
Package
MDIP 4L
MDIP 4L
MDIP 4L
MDIP 4L
MDIP 4L
MDIP 4L
MDIP 4L
Packing Method
DF005M
DF01M
DF02M
DF04M
DF06M
DF08M
DF10M
Rail
Rail
Rail
Rail
Rail
Rail
Rail
DF02M
DF04M
DF06M
DF08M
DF10M
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Value
Symbol
Parameter
Unit
DF
005M
DF01M DF02M DF04M DF06M DF08M DF10M
VRRM Maximum Repetitive Reverse Voltage
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
VRMS
VDC
Maximum RMS Bridge Input Voltage
DC Reverse Voltage at Rated IR
100
1000
Average Rectified Forward Current
at TA = 40°C
IF(AV)
1.5
A
Non-Repetitive Peak Forward Surge
Current
IFSM
50
A
8.3 ms Single Half-Sine Wave
TSTG
TJ
Storage Temperature Range
-55 to +150
-55 to +150
°C
°C
Operating Junction Temperature
© 2001 Fairchild Semiconductor Corporation
DF005M - DF10M Rev. 3.3
www.fairchildsemi.com
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Value
3.1
Unit
W
Power Dissipation
Thermal Resistance, Junction-to-Ambient(1), per Leg
RθJA
40
°C/W
Note:
1. Device mounted on PCB with 0.5 inch × 0.5 inch (13 mm × 13 mm).
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
IF = 1.0 A
Min.
Typ.
Max.
1.1
Unit
VF
Forward Voltage, per Element
V
TA = 25°C
5.0
IR
Reverse Current, per Element at Rated VR
Rating for Fusing (t < 8.35 ms)
μA
TA = 125°C
500
10
I2t
A2s
pF
VR = 4.0 V,
f = 1.0 MHz
CJ
25
Typical Capacitance, per Leg
© 2001 Fairchild Semiconductor Corporation
DF005M - DF10M Rev. 3.3
www.fairchildsemi.com
2
Typical Performance Characteristics
50
40
30
20
10
0
1.5
1
0.5
0
1
2
5
10
20
50
100
20
40
60
80
100
120
140
160
Number of Cycles at 60Hz
Ambient Temperature [ºC]
Figure 2. Forward Current Derating Curve
Figure 1. Non-Repetitive Surge Current
10
10
º
= 100 C
T
A
1
0.1
1
0.1
T
º
= 25 C
A
T
= 25ºC
μs
Pulse Width = 200
0.01
0.01
0.4
0
20
40
60
80
100
120
140
0.6
0.8
1
1.2
1.4
Percent of Rated Peak Reverse Voltage [%]
Forward Voltage, VF [V]
Figure 4. Reverse Current vs. Reverse Voltage
Figure 3. Forward Voltage Characteristics
© 2001 Fairchild Semiconductor Corporation
DF005M - DF10M Rev. 3.3
www.fairchildsemi.com
3
Physical Dimensions
8.51
8.05
6.50
6.20
8.00
7.24
1.14
0.89
1.09
TOP VIEW
1
X
45°
OPTIONAL
3.30
2.20
4.69
3.81
0.33
0.22
0.58
0.46
5.20
5.00
8.90
7.60
SIDE VIEW
END VIEW
NOTES:
A. THIS PACKAGE DOES NOT CONFORM TO
ANY REFERENCE STANDARD.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
G. DRAWING FILE NAME: MKT-N04DREV1
Figure 5. 4-Lead, DIP, 6.5 MM WIDE
© 2001 Fairchild Semiconductor Corporation
DF005M - DF10M Rev. 3.3
www.fairchildsemi.com
4
TRADEMARKS
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intended to be an exhaustive list of all such trademarks.
OPTOPLANAR®
AccuPower¥
AttitudeEngine™
Awinda®
F-PFS¥
®*
FRFET®
Global Power ResourceSM
GreenBridge¥
Green FPS¥
Green FPS¥ e-Series¥
Gmax¥
TinyBoost®
TinyBuck®
TinyCalc¥
TinyLogic®
TINYOPTO¥
TinyPower¥
TinyPWM¥
TinyWire¥
TranSiC¥
®
AX-CAP®*
Power Supply WebDesigner¥
PowerTrench®
PowerXS™
BitSiC¥
Build it Now¥
CorePLUS¥
CorePOWER¥
CROSSVOLT¥
CTL¥
Programmable Active Droop¥
GTO¥
IntelliMAX¥
QFET®
QS¥
ISOPLANAR¥
Making Small Speakers Sound Louder
and Better™
MegaBuck¥
MICROCOUPLER¥
MicroFET¥
Quiet Series¥
RapidConfigure¥
¥
Current Transfer Logic¥
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMax¥
TriFault Detect¥
TRUECURRENT®*
μSerDes¥
Saving our world, 1mW/W/kW at a time™
SignalWise¥
SmartMax¥
ESBC¥
MicroPak¥
SMART START¥
Solutions for Your Success¥
SPM®
®
UHC®
MicroPak2¥
MillerDrive¥
MotionMax¥
MotionGrid®
Ultra FRFET¥
UniFET¥
VCX¥
VisualMax¥
VoltagePlus¥
XS™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series¥
FACT®
STEALTH¥
SuperFET®
MTi®
SuperSOT¥-3
MTx®
FAST®
SuperSOT¥-6
SuperSOT¥-8
SupreMOS®
MVN®
FastvCore¥
FETBench¥
FPS¥
mWSaver®
Xsens™
OptoHiT¥
❺
™
SyncFET¥
Sync-Lock™
OPTOLOGIC®
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Preliminary
No Identification Needed
Obsolete
First Production
Full Production
Not In Production
Rev. I74
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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