DF08M/72-E3 [VISHAY]
DIODE 1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, MINIATURE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectifier Diode;
| 型号： | DF08M/72-E3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, MINIATURE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectifier Diode |
| 文件： | 总3页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DF005M thru DF10M
VISHAY
Vishay Semiconductors
Miniature Glass Passivated Single-Phase Bridge Rectifiers
Case Style DFM
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
IR
1 A
50 V to 1000 V
50 A
5 µA
~
VF
1.1 V
~
Tj max.
150 °C
~
~
Features
Mechanical Data
• UL Recognition, file number E54214
Case: DFM
• Ideal for printed circuit boards
Epoxy meets UL-94V-0 Flammability rating
• Applicable for automative insertion
• High surge current capability
Terminals: Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and MIL-STD-750, Method
2026
• Meets MSL level 1, per J-STD-020C
Polarity: As marked on body
Typical Applications
General purpose use in ac-to-dc bridge full wave rec-
tification for SMPS, Lighting Ballaster, Adapter, Bat-
tery Charger, Home Appliances, Office Equipment,
and Telecommunication applications
Maximum Ratings
Ratings at 25 °C ambient temperature unless otherwise specified.
Parameter
Symbol
DF
DF
DF
DF
DF
DF
DF
Unit
005M
01M
02M
04M
06M
08M
10M
Device Marking Code
DF005 DF01 DF02 DF04 DF06 DF08 DF10
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
V
V
V
A
A
Maximum DC blocking voltage
100
1000
Max. average forward output rectified current at TA= 40 °C
IF(AV)
IFSM
Peak forward surge current single sine-wave
superimposed on rated load
50
I2t
A2sec
°C
Rating for fusing (t < 8.3 ms)
10
Operating junction and storage temperature range
TJ,TSTG
-55 to +150
Document Number 88571
19-Nov-04
www.vishay.com
1
DF005M thru DF10M
Vishay Semiconductors
VISHAY
Electrical Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Parameter
Test condition
Symbol
DF
005M
DF
01M
DF
02M
DF
04M
DF
06M
DF
08M
DF
10M
Unit
V
Maximum instantaneous
at 1.0 A
VF
1.1
forward voltage drop per leg
Maximum reverse current at
rated DC blocking voltage
per leg
T
A = 25 °C
IR
5.0
500
µA
TA = 125 °C
Typical junction capacitance at 4.0 V, 1 MHz
per leg
CJ
25
pF
Thermal Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Parameter
Symbol
DF
DF
DF
DF
DF
DF
DF
Unit
005M
01M
02M
04M
06M
08M
10M
Typical thermal resistance per leg (1)
RθJA
RθJL
40
15
°C/W
Notes:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13 x 13 mm) copper pads
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
60
50
40
30
20
10
0
1.0
T
= 150 °C
J
60 HZ
Resistive or
Inductive Load
Single Sine-Wave
0.5
P.C.B mounted on
1.0 Cycle
10
0.51 x 0.51" (13 x 13 mm)
Copper pads with 0.06"
(1.5 mm) lead length
0
1
100
20
40
60
80
100
120
140 150
Number of Cycles at 60 Hz
Ambient Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Per Leg
www.vishay.com
Document Number 88571
19-Nov-04
2
DF005M thru DF10M
VISHAY
Vishay Semiconductors
100
10
1
10
1
T
= 25 °C
J
f = 1.0 MHz
Vsig = 50mVp-p
0.1
T
= 25 °C
J
Pulse width = 300µs
1% Duty Cycle
0.01
0.4
1
10
100
0.6
0.8
1.0
1.2
1.4
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Figure 3. Typical Forward Characteristics Per Leg
Figure 5. Typical Junction Capacitance Per Leg
100
100
10
T
J
= 125 °C
10
1
1
0.1
T
J
= 25 °C
40
0.1
0.01
100
1
10
0.01
0.1
80
0
20
60
100
Percent of Rated Peak Reverse Voltage (V)
Figure 4. Typical Reverse Leakage Characteristics Per Leg
t, Heating Time (sec.)
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
0.255 (6.5) 0.315 (8.00)
0.245 (6.2)
0.285 (7.24)
0.335 (8.51)
0.320 (8.12)
0.130 (3.3)
0.120 (3.05)
0.080 (2.03)
0.050 (1.27)
0.045 (1.14)
0.035 (0.89)
0.023 (0.58)
0.018 (0.46)
0.013 (3.3)
0.0086 (0.22)
0.185 (4.69)
0.150 (3.81)
0.350 (8.9)
0.300 (7.6)
0.075 (1.90)
0.055 (1.39)
0.205 (5.2)
0.195 (5.0)
Document Number 88571
19-Nov-04
www.vishay.com
3
相关型号：
DF08M45-E3
DIODE 1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, DFM, 4 PIN, Bridge Rectifier Diode
VISHAY
DF08MA-E3/51
DIODE 1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, MINIATURE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectifier Diode
VISHAY
DF08MA/45-E3
DIODE 1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectifier Diode
VISHAY
DF08MA/51
Bridge Rectifier Diode, 1 Phase, 1A, 800V V(RRM), Silicon, MINIATURE, PLASTIC, CASE DFM, 4 PIN
VISHAY
DF08MA/51-E3
DIODE 1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, MINIATURE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectifier Diode
VISHAY
DF08MA/72-E3
DIODE 1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, MINIATURE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectifier Diode
VISHAY
DF08MA45-E3
DIODE 1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, DFM, 4 PIN, Bridge Rectifier Diode
VISHAY
DF08MAE3
DIODE 1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, MINIATURE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectifier Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明